CYSTEKEC MTN4N01Q8 N-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN4N01Q8
Spec. No. : C804Q8
Issued Date : 2009.12.16
Revised Date : 2011.03.21
Page No. : 1/7
BVDSS
RDSON(MAX)
ID
20V
30mΩ
6A
Description
The MTN4N01Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Low voltage drive (2.5V)
• Pb-free lead plating package
Symbol
Outline
MTN4N01Q8
SOP-8
G:Gate
D:Drain
S:Source
Ordering Information
Device
Package
Shipping
MTP4N01Q8
SOP-8
(Pb-free lead plating package)
3000 pcs / Tape & Reel
MTN4N01Q8
CYStek Product Specification
Spec. No. : C804Q8
Issued Date : 2009.12.16
Revised Date : 2011.03.21
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V
Continuous Drain Current @ TA=70°C, VGS=4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction-to-ambient, max
Operating Junction and Storage Temperature Range
VDS
VGS
ID
ID
IDM
PD
Rth,j-a
Tj, Tstg
Limits
20
±10
6
*1
4.8 *1
20 *2
2.5
0.02
50 *1
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
20
0.6
-
10
-
1.2
±100
1
25
30
40
V
V
S
nA
μA
μA
mΩ
mΩ
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =2.5V, ID=2A
VGS=±10
VDS =20V, VGS =0
VDS =16V, VGS =0, Tj=70°C
VGS =4.5V, ID=4.2A
VGS =2.5V, ID=2A
11
2
3
13
35
45
50
870
260
60
16
1200
-
-
1.2
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
-
nC
ID=4.2A, VDS=12V, VGS=4.5V
ns
VDS=12V, ID=4.2A, VGS=4.5V,
RG=2.3Ω
pF
VGS=0V, VDS=10V, f=1MHz
V
IS=1.7A, VGS=0V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN4N01Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C804Q8
Issued Date : 2009.12.16
Revised Date : 2011.03.21
Page No. : 3/7
Characteristic Curves
MTN4N01Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C804Q8
Issued Date : 2009.12.16
Revised Date : 2011.03.21
Page No. : 4/7
Characteristic Curves(Cont.)
MTN4N01Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C804Q8
Issued Date : 2009.12.16
Revised Date : 2011.03.21
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN4N01Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C804Q8
Issued Date : 2009.12.16
Revised Date : 2011.03.21
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN4N01Q8
CYStek Product Specification
Spec. No. : C804Q8
Issued Date : 2009.12.16
Revised Date : 2011.03.21
Page No. : 7/7
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
I
C
B
Marking:
Device Name
Date Code
H
4N01SC
□□□□
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1890
0.2007
0.1496
0.1654
0.2283
0.2441
0.0480
0.0519
0.0138
0.0193
0.1472
0.1527
0.0531
0.0689
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.80
5.10
3.80
4.20
5.80
6.20
1.22
1.32
0.35
0.49
3.74
3.88
1.35
1.75
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0098 REF
0.0118
0.0354
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.25 REF
0.30
0.90
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN4N01Q8
CYStek Product Specification
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