Silizium-PIN-Fotodiode Silicon PIN Photodiode BP 104 S Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • Geeignet für Vapor-Phase Löten und IR-Reflow-Löten • SMT-fähig • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • Suitable for vapor-phase and IR-reflow soldering • Suitable for SMT Anwendungen Applications • Lichtschranken für Gleich- und Wechsellichtbetrieb • IR-Fernsteuerungen • Industrieelektronik • „Messen/Steuern/Regeln“ • • • • Typ Type Bestellnummer Ordering Code BP 104 S Q62702-P1605 2001-02-21 1 Photointerrupters IR remote controls Industrial electronics For control and drive circuits BP 104 S Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 85 °C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotostrom VR = 5 V Photocurrent IP 55 (≥ 40) nA/lx Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 400 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 4.84 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 2.20 × 2.20 mm × mm L×W Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.3 mm Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤ 30) nA Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ 0.62 A/W Quantenausbeute, λ = 850 nm Quantum yield η 0.90 Electrons Photon 2001-02-21 2 BP 104 S Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Leerlaufspannung, EV = 1000 lx Open-circuit voltage VO 360 (≥ 280) mV Kurzschlußstrom, EV = 1000 lx Short-circuit current ISC 50 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA tr, tf 20 ns Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 48 pF Temperaturkoeffizient von VO Temperature coefficient of VO TKV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TKI 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 850 nm NEP 3.6 × 10– 14 Nachweisgrenze, VR = 10 V, λ = 850 nm Detection limit D* 6.1 × 1012 2001-02-21 3 W -----------Hz cm × Hz -------------------------W BP 104 S Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Relative Spectral Sensitivity Srel = f (λ) OHF00078 100 ΙP S rel % 80 OHF02283 10 3 µA 10 4 mV VO 10 2 10 3 VO 60 OHF00958 160 mW Ptot 140 120 100 ΙP 10 1 Total Power Dissipation Ptot = f (TA) 10 2 40 80 60 10 0 10 1 40 20 20 10 -1 10 0 0 400 500 600 700 800 900 nm 1100 λ Dark Current IR = f (VR), E = 0 10 0 10 3 lx 10 4 EV 10 2 0 0 20 40 60 80 ˚C 100 TA Capacitance Dark Current C = f (VR), f = 1 MHz, E = 0 IR = f (TA), VR = 10 V, E = 0 OHF02284 10 2 10 1 OHF01778 60 nA C ΙR OHF00082 10 3 Ι R nA pF 50 10 2 10 1 40 10 1 30 10 0 20 10 0 10 10 -1 0 2 4 6 0 -2 10 8 10 12 14 16 V 20 10 -1 10 0 10 1 V 10 2 VR VR Birectional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2001-02-21 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 -1 0 20 40 60 80 ˚C 100 TA BP 104 S Chip position 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) ˚ 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...5 0.3 (0.012) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Maßzeichnung Package Outlines 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.6 (0.063) ±0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 5