DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D102 BAT854W series Schottky barrier (double) diodes Product specification 2001 Feb 27 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES BAT854W series PINNING • Very low forward voltage PIN • Very low reverse current BAT854W • Guard ring protected 3 • Very small SMD plastic package. APPLICATIONS • Ultra high-speed switching • Protection circuits • Low power consumption applications (e.g. hand-held applications). 1 1 a 2 n.c. 3 k Fig.2 1 k1 2 k2 3 a1,a2 BAT854W single diode configuration (symbol). 3 BAT854CW 1 a1 2 a2 3 k1, k2 1 Planar Schottky barrier diodes encapsulated in a SOT323 very small SMD plastic package. Single diodes and double diodes with different pinning are available. 2 MLC360 Fig.3 BAT854SW DESCRIPTION 2 n.c. MLC357 BAT854AW • Voltage clamping • Blocking diodes SYMBOL 1 a1 2 k2 3 k1, a2 BAT854AW diode configuration (symbol). 3 1 2 MARKING MLC359 TYPE NUMBER MARKING CODE BAT854W 81 BAT854AW 82 BAT854CW 83 BAT854SW 84 3 handbook, 2 columns 1 Fig.4 BAT854CW diode configuration (symbol). 2 Top view 3 MBC870 1 2 MLC358 Fig.1 2001 Feb 27 Simplified outline SOT323 and pin configuration. 2 Fig.5 BAT854SW diode configuration (symbol). Philips Semiconductors Product specification Schottky barrier (double) diodes BAT854W series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method Tstg storage temperature Tj junction temperature Tamb operating ambient temperature − 40 V − 200 mA − 300 mA − 1 A −65 +150 °C − 150 °C −65 +150 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF continuous forward voltage see Fig.6 IF = 0.1 mA 200 − mV IF = 1 mA 260 − mV IF = 10 mA 340 − mV IF = 30 mA − 420 mV IF = 100 mA − 550 mV IR continuous reverse current VR = 25 V; note 1; see Fig.7 − 0.5 µA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.8 − 20 pF Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOT323 standard mounting conditions. 2001 Feb 27 3 VALUE UNIT 625 K/W Philips Semiconductors Product specification Schottky barrier (double) diodes BAT854W series GRAPHICAL DATA MLD546 103 handbook, halfpage MLD547 103 handbook, halfpage IF (mA) IR (µA) 102 102 (1) (2) 10 10 (1) (2) (3) 1 1 (3) 10−1 0 0.4 0.8 VF (V) 10−1 1.2 0 10 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Fig.7 Forward current as a function of forward voltage; typical values. MLD548 20 Cd handbook, halfpage (pF) 16 12 8 4 0 0 10 20 30 VR (V) 40 f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 2001 Feb 27 4 20 30 VR (V) 40 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier (double) diodes BAT854W series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Feb 27 REFERENCES IEC JEDEC EIAJ SC-70 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT854W series DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Feb 27 6 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT854W series NOTES 2001 Feb 27 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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