PHILIPS BLF178P Power ldmos transistor Datasheet

BLF178P
Power LDMOS transistor
Rev. 2 — 16 February 2012
Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 110 MHz band.
Table 1.
Application information
f
VDS
PL
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
CW
108
50
1000
26
75
pulsed RF
108
50
1200
28.5
75
Test signal
1.2 Features and benefits
 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with  of 20 %:
 Output power = 1200 W
 Power gain = 28.5 dB
 Efficiency = 75 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (10 MHz to 110 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 FM transmitter applications
BLF178P
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1
2
drain2
3
gate1
4
gate2
5
Simplified outline
1
Graphic symbol
2
1
5
3
3
4
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF178P
Package
Name
Description
Version
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLF178P
Product data sheet
Symbol
Parameter
Conditions
VDS
drain-source voltage
VGS
gate-source voltage
0.5
+11
V
ID
drain current
-
88
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 February 2012
Min
Max
Unit
-
110
V
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Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
Zth(j-c)
Conditions
thermal resistance from junction to case
Tj = 150 C
transient thermal impedance from junction to case
Tj = 150 C; tp = 100 s;  = 20 %
[1]
Tj is the junction temperature.
[2]
Rth(j-c) is measured under RF conditions.
[3]
See Figure 1.
Typ
Unit
[1][2]
0.14
K/W
[3]
0.04
K/W
001aak924
0.18
Zth(j-c)
(K/W)
(7)
0.12
(6)
0.06
(5)
(3)
(4)
(2)
(1)
0
10−7
10−6
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
(1)  = 1 %
(2)  = 2 %
(3)  = 5 %
(4)  = 10 %
(5)  = 20 %
(6)  = 50 %
(7)  = 100 % (DC)
Fig 1.
Transient thermal impedance from junction to case as a function of pulse duration
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
BLF178P
Product data sheet
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.5 mA
110
-
-
V
VDS = 10 V; ID = 500 mA
1.25
1.7
2.25
V
VGS(th)
gate-source threshold voltage
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 20 mA
0.8
1.3
1.8
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
A
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Power LDMOS transistor
Table 6.
DC characteristics …continued
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
58
71
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 16.66 A
-
0.07
-

Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
3
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
403
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
138
-
pF
Table 7.
RF characteristics
Test signal: pulsed RF; tp = 100 s;  = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
PL = 1200 W
27
28.5
31
dB
Gp
power gain
RLin
input return loss
PL = 1200 W
-
16
12
dB
D
drain efficiency
PL = 1200 W
71
75
-
%
001aaj113
900
Coss
(pF)
750
600
450
300
150
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 2.
Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The BLF178P is capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 40 mA; PL = 1200 W pulsed; f = 108 MHz.
BLF178P
Product data sheet
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Rev. 2 — 16 February 2012
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Power LDMOS transistor
7. Test information
7.1 Impedance information
Table 8.
Typical impedance
Simulated ZS and ZL test circuit impedances.
f
ZS
ZL
MHz


108
3.91 j3.56
3.59  j1.73
drain
ZL
gate
ZS
001aaf059
Fig 3.
Definition of transistor impedance
7.2 RF performance
The following figures are measured in a class-AB production test circuit.
7.2.1 1-Tone CW pulsed
aaa-002242
31
Gp
(dB)
ηD
(%)
Gp
29
aaa-002243
66
80
PL
(dBm)
64
60
Ideal PL
(2)
27
62
40
ηD
(1)
PL
25
60
20
23
100
300
500
700
900
1100
58
0
1300 1500
PL (W)
29
31
33
35
Pi (dBm)
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
 = 20 %.
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
 = 20 %.
(1) PL(1dB) = 60.8 dBm (1214 W)
(2) PL(3dB) = 61.2 dBm (1319 W)
Fig 4.
Power gain and drain efficiency as function of
output power; typical values
BLF178P
Product data sheet
Fig 5.
Output power as a function of input power;
typical values
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Power LDMOS transistor
aaa-002244
32
Gp
(dB)
aaa-002245
80
ηD
(%)
30
60
(5)
(4)
28
(3)
40
(5)
(2)
(4)
(1)
(3)
(2)
26
20
(1)
24
100
300
500
700
900
1100
0
100
1300 1500
PL (W)
VDS = 50 V; f = 108 MHz; tp = 100 s;  = 20 %.
300
500
(1) IDq = 0 mA
(2) IDq = 20 mA
(2) IDq = 20 mA
(3) IDq = 40 mA
(3) IDq = 40 mA
(4) IDq = 80 mA
(4) IDq = 80 mA
(5) IDq = 160 mA
(5) IDq = 160 mA
Power gain as a function of output power;
typical values
BLF178P
Product data sheet
900
1100
1300 1500
PL (W)
VDS = 50 V; f = 108 MHz; tp = 100 s;  = 20 %.
(1) IDq = 0 mA
Fig 6.
700
Fig 7.
Drain efficiency as a function of output power;
typical values
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BLF178P
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Power LDMOS transistor
aaa-002246
32
Gp
(dB)
30
aaa-002247
90
ηD
(%)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
70
28
26
50
(8)
(7)
(6)
(5)
24
(4)
30
(3)
22
(2)
(1)
10
20
0
200
400
600
800
1000
1200 1400
PL (W)
0
IDq = 40 mA; f = 108 MHz; tp = 100 s;  = 20 %.
200
(1) VDS = 15 V
(2) VDS = 20 V
(2) VDS = 20 V
(3) VDS = 25 V
(3) VDS = 25 V
(4) VDS = 30 V
(4) VDS = 30 V
(5) VDS = 35 V
(5) VDS = 35 V
(6) VDS = 40 V
(6) VDS = 40 V
(7) VDS = 45 V
(7) VDS = 45 V
(8) VDS = 50 V
(8) VDS = 50 V
Power gain as a function of output power;
typical values
BLF178P
Product data sheet
600
800
1000
1200 1400
PL (W)
IDq = 40 mA; f = 108 MHz; tp = 100 s;  = 20 %.
(1) VDS = 15 V
Fig 8.
400
Fig 9.
Drain efficiency as a function of output power;
typical values
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Power LDMOS transistor
7.3 Test circuit
C10
+Vds
T2
C5
+Vgs C7
R1
R3
C12
L5
C14
C20
C1
L1
L3
C3
C2
C16
C18
C17
C4
L2
L4
R2
R4
+Vgs C8
BLF178P INTPUT REV1
L6
L7
C21
L8
C22
C19
C15
C13
BLF178P OUTPUT REV1
C6
T1
C11
+Vds
23 mm
aaa-002248
Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 10. Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see Figure 10.
Component
Product data sheet
Value
Remarks
C1, C2, C5, C6, C14,
C15, C21, C22
multilayer ceramic chip capacitor
1 nF
[1]
C3
multilayer ceramic chip capacitor
82 pF
[1]
C4
multilayer ceramic chip capacitor
240 pF
[1]
C7, C8
multilayer ceramic chip capacitor
4.7 F; 50 V
C10, C11
electrolytic capacitor
1000 F; 63 V
C12, C13
multilayer ceramic chip capacitor
4.7 F; 100 V
C16, C17
multilayer ceramic chip capacitor
120 pF
[1]
C18
multilayer ceramic chip capacitor
82 pF
[1]
C19
multilayer ceramic chip capacitor
110 pF
[1]
C20
multilayer ceramic chip capacitor
56 pF
[1]
L1, L2, L3, L4
1.5 turn 0.8 mm copper wire
D = 3 mm;
length = 2 mm
L5, L6
5 turn 0.8 mm copper wire
D = 3 mm;
length = 4.5 mm
L7, L8
2.5 turn 0.8 mm copper wire
D = 3 mm;
length = 3 mm
R1, R2
SMD resistor
100 
R3, R4
SMD resistor
9.1 
Philips 1206
T1
semi rigid coax
25 ; 160 mm
UT-090C-25
T2
semi rigid coax
25 ; 160 mm
UT-141C-25
[1]
BLF178P
Description
Philips 1206
American Technical Ceramics type 800B or capacitor of same quality.
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Power LDMOS transistor
8. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
0.185 0.465 0.007 1.242 1.241
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
0.165 0.455 0.004 1.218 1.219
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
00-03-03
10-02-02
SOT539A
Fig 11. Package outline SOT539A
BLF178P
Product data sheet
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Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
DC
Direct Current
ESD
ElectroStatic Discharge
FM
Frequency Modulation
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF178P v.2
20120216
Product data sheet
-
BLF178P v.1
Modifications
BLF178P v.1
BLF178P
Product data sheet
•
•
•
•
•
•
•
•
•
•
The status of this document has been changed to Product data sheet.
Table 1 on page 1: “Mode of operation” has been changed to “Test signal”.
Table 1 on page 1: The value for Gp has been changed.
Section 1.2 on page 1: Some values have been changed
Table 6 on page 3: The value for IDSX has been changed
Table 7 on page 4: “Mode of operation” has been changed to “Test signal”.
Table 7 on page 4: Several values have been changed.
Section 7 on page 5: Section has been added.
Removed section “Reliability”.
Section 9 on page 10: Section has been added.
20110405
Objective data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 February 2012
-
© NXP B.V. 2012. All rights reserved.
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Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
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sheet, which is available on request via the local NXP Semiconductors sales
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BLF178P
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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All information provided in this document is subject to legal disclaimers.
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For sales office addresses, please send an email to: [email protected]
BLF178P
Product data sheet
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14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
7.2.1
7.3
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
Impedance information . . . . . . . . . . . . . . . . . . . 5
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 February 2012
Document identifier: BLF178P