PolarTM HiPerFETTM Power MOSFETs IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 12 A IDM TC = 25°C, Pulse Width Limited by TJM 24 A IAR TC = 25°C 6 A EAS TC = 25°C 750 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 463 W Maximum Ratings -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Maximum Lead Temperature for Soldering 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 PLUS220 types D S D (Tab) PLUS220SMD (IXFV_S) TL Mounting Force (PLUS220) 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G FC = = ≤ ≤ 11..65/2.5..14.6 N/lb. 6 4 g g G S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 z z z V 6.5 V ± 100 nA 20 μA 1.0 mA 1.05 Ω Applications z z z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99920B(03/11) IXFH12N100P IXFV12N100P IXFV12N100PS Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max. 4.8 Ciss Coss 8.8 S 1.9 Ω 4080 pF 246 pF 40 pF 30 ns VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 25 ns 60 ns 36 ns 80 nC 24 nC 35 nC 0.27 °C/W RthJC RthCS PLUS220 Outline (TO-247&PLUS220) 0.25 Source-Drain Diode TJ = 25°C Unless Otherwise Specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 12 A ISM Repetitive, Pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM Note TO-247 Outline 300 ns IF = 6A, -di/dt = 100A/μs VR = 100V, VGS = 0V 0.8 μC 7.9 A 1 2 ∅P 3 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. e Terminals: 1 - Gate 3 - Source PLUS220SMD Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH12N100P IXFV12N100P IXFV12N100PS Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 24 12 VGS = 10V 8V VGS = 10V 8V 20 10 7V 16 ID - Amperes ID - Amperes 8 6V 6 12 6V 8 4 2 4 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 12 5 10 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature 3.2 VGS = 10V 7V 8 6V 6 5V 4 VGS = 10V 2.8 R DS(on) - Normalized 10 2 2.4 I D = 12A 2.0 I D = 6A 1.6 1.2 0.8 0 0.4 0 5 10 15 20 25 30 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 14 2.8 2.6 VGS = 10V 12 TJ = 125ºC 2.4 10 2.2 ID - Amperes R DS(on) - Normalized 15 VDS - Volts 12 ID - Amperes 7V 2.0 1.8 1.6 1.4 8 6 4 1.2 TJ = 25ºC 2 1.0 0.8 0 0 2 4 6 8 10 12 14 16 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 18 20 22 24 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH12N100P IXFV12N100P IXFV12N100PS Fig. 7. Input Admittance 18 14 16 TJ = - 40ºC 14 12 TJ = 125ºC 25ºC - 40ºC 10 8 6 25ºC 12 g f s - Siemens ID - Amperes Fig. 8. Transconductance 16 125ºC 10 8 6 4 4 2 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 2 4 6 8 10 12 14 16 18 ID - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 40 16 35 14 VDS = 500V 30 12 25 10 VGS - Volts IS - Amperes I D = 6A 20 TJ = 125ºC 15 I G = 10mA 8 6 TJ = 25ºC 10 4 5 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 100 Crss f = 1 MHz 10 0 5 0.1 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_12N100P(75-744)4-01-08-A