Cymbet CBC3105-R4C-TR1 Enerchip cc with integrated power management Datasheet

Product Discontinued - Not for New Designs
EnerChip™ CC CBC3105
EnerChip CC with Integrated Power Management
Features
•
•
•
•
•
•
•
•
•
•
•
Power Manager with Charge Control
Integrated 5µAh Solid State Battery
Built-in Energy Storage Protection
Temperature Compensated Charge Control
Adjustable Switchover Voltage
Charges EnerChip Over a Wide Supply Range
Low Standby Power
SMT - Lead-Free Reflow Tolerant
Thousands of Recharge Cycles
Low Self-Discharge
Eco-Friendly, RoHS Compliant - tested
Applications
•
•
•
•
•
•
•
Standby supply for non-volatile SRAM, Real-time
clocks, controllers, supply supervisors, and other
system-critical components.
Wireless sensors and RFID tags and other
powered, low duty cycle applications.
Localized power source to keep microcontrollers
and other devices alert in standby mode.
Power bridging to provide back-up power to
system during exchange of main batteries.
Consumer appliances that have real-time
clocks; provides switchover power from main
supply to backup battery.
Business and industrial systems such as:
network routers, point-of-sale terminals, singleboard computers, test equipment, multi-function
printers, industrial controllers, and utility meters.
Energy Harvesting by coupling the EnerChip
with energy transducers such as solar panels.
IP™
ENERCH5-R4C
CBC310
4mm x 5mm x 0.9mm DFN SMT Package
The EnerChip CC is the world’s first Intelligent Thin
Film Energy Storage Device. It is an integrated
solution that provides backup energy storage and
power management for systems requiring power
bridging and/or secondary power. A single EnerChip
CC can charge up to 10 additional EnerChips
connected in parallel.
During normal operation, the EnerChip CC charges
itself with a controlled voltage using an internal
charge pump that operates from 2.5V to 5.5V. An
ENABLE pin allows for activation and deactivation
of the charge pump using an external control line
in order to minimize current consumption and take
advantage of the fast recharge time of the EnerChip.
When the primary power supply dips below a userdefined threshold voltage, the EnerChip CC will signal
this event and route the EnerChip voltage to VOUT.
The EnerChip CC also has energy storage protection
circuitry to enable thousands of recharge cycles.
The CBC3105-R4C is a 16-pin, 4mm x 5mm Dual
Flat No-lead (DFN) package, available in tubes, trays,
or tape-and-reel for use with automatic insertion
equipment.
CBC3105
Figure 1: Typical EnerChip CC
Application Circuit
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
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Page 1 of 12
Preliminary
EnerChip CC CBC3105
Electrical Properties
EnerChip Backup Output voltage:
Energy Capacity (typical): Recharge time to 80%:
Charge/Discharge cycles: Physical Properties
Package size:
Operating temperature:
Storage temperature:
3.3V
5µAh
10 minutes
>5000 to 10% discharge
4mm x 5mm
-20°C to +70°C
-40°C to +125°C
Functional Block Diagram
The EnerChip CC internal schematic is shown in Figure 2. The input voltage from the power supply (VDD) is
applied to the charge pump, the control logic, and is compared to the user-set threshold as determined by the
voltage on VMODE. VMODE is an analog input ranging from 0V to VDD. The ENABLE pin is a digital input that
turns off the charge pump when low. VOUT is either supplied from VDD or the integrated EnerChip. RESET is a
digital output that, when low, indicates VOUT is being sourced by the integrated EnerChip.
CFLY is the flying capacitor in the voltage doubler circuit. The value of CFLY can be changed if the output
impedance of the EnerChip CC needs to be modified. The output impedance is dictated by 1/fC, where f is the
frequency of oscillation (typically 100kHz) and C is the capacitor value (typically 0.1µF). GND is system ground.
Figure 2: EnerChip CC CBC3105 Internal Block Diagram
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 2 of 12
Preliminary
EnerChip CC CBC3105
CBC3105-R4C Input/Ouput Descriptions
Pin Number(s)
Label
Description
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VBATNC
VMODE
GND
VOUT
CP
CN
NC
RESET
ENABLE
NC
VDD
NC
VCHG
NC
VBAT+
Negative EnerChip Terminal - Tie to System Ground
No Connection
Mode Select for Backup Switchover Threshold
System Ground
System Voltage
Flying Capacitor Positive
Flying Capacitor Negative
No Connection
Reset Signal (Active Low)
Charge Pump Enable
No Connection
Input Voltage
No Connection
EnerChip Charge Voltage - Tie to Pin 16 and/or Optional EnerChip(s)
No Connection
Positive EnerChip Terminal - Tie to Pin 14
VBATNC
VMODE
GND
VOUT
CP
CN
NC
116
215
Top View
314
413
512
611
710
8
9
VBAT+
NC
VCHG
NC
VDD
NC
ENABLE
RESET/
Figure 3: EnerChip CC CBC3105 Package Pin-Out
Handling EnerChips as MSL 3 Devices
EnerChip CBC050 devices are rated Moisture Sensitivity Level 3 and must be mounted and reflowed within 168
hours of being removed from the moisture barrier antistatic bag.
Soldering, Rework, and Electrical Test
Refer to the Cymbet User Manual AN-1026 for soldering, rework, and replacement of the EnerChip on printed
circuit boards, and for instructions on in-circuit electrical testing of the EnerChip.
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 3 of 12
Preliminary
EnerChip CC CBC3105
Absolute Maximum Ratings
PARAMETER
CONDITION
MIN
TYPICAL
MAX
UNITS
VDD with respect to GND
25°C
GND - 0.3
-
6.0
V
ENABLE and VMODE Input Voltage
25°C
GND - 0.3
-
VDD+0.3
V
VBAT
25°C
3.0
-
4.15
V
25°C
3.0
-
4.15
V
GND - 0.3
GND - 0.3
-
6.0
V
RESET Output Voltage
25°C
25°C
-
VOUT+0.3
V
CP, Flying Capacitor Voltage
25°C
GND - 0.3
-
6.0
V
CN
25°C
GND - 0.3
-
VDD+0.3
V
(1)
VCHG
(1)
VOUT
(1)
No external connections to these pins are allowed, except parallel EnerChips.
Operating Characteristics
PARAMETER
Output Voltage VOUT
Output Voltage VOUT (backup mode)
EnerChip Pulse Discharge Current
Self-Discharge (5-yr. average; 25°C)
CONDITION
MIN
TYPICAL
MAX
UNITS
VDD > VTH
-
VDD
-
V
2.2
3.3
3.6
Variable - see App. Note 1025
VDD < VTH
Non-recoverable
-
2.5
-
% per year
Recoverable
1.5
25
+70
% per year
°C
°C
Operating Temperature
-
-20
Storage Temperature
-
-40
-
+125 (2)
Charge cycle 2
-
7
11
Charge cycle 1000
-
30
60
Cell Resistance (25°C)
Recharge Cycles
(to 80% of rated capacity; 4.1V charge
voltage)
25°C
40°C
Recharge Time (to 80% of rated
capacity; 4.1V charge; 25°C)
Capacity
V
-
(1)
kΩ
10% depth-of-discharge
5000
-
-
cycles
50% depth-of discharge
1000
-
-
cycles
10% depth-of-discharge
2500
-
-
cycles
50% depth-of-discharge
500
-
-
cycles
Charge cycle 2
-
11
22
Charge cycle 1000
-
45
70
40nA discharge; 25°C
5
-
-
(1)
First month recoverable self-discharge is 5% average.
(2)
Storage temperature is for uncharged EnerChip CC device.
minutes
µAh
Note: All specifications contained within this document are subject to change without notice.
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 4 of 12
Preliminary
EnerChip CC CBC3105
POWER SUPPLY CURRENT CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
ENABLE=GND
Quiescent Current
IQ
ENABLE=VDD
EnerChip Cutoff Current
MIN
MAX
UNITS
VDD=3.3V
-
3.5
µA
VDD=5.5V
VDD=3.3V
VDD=5.5V
-
6.0
µA
-
35
µA
-
38
µA
IQBATOFF
VBAT < VBATCO,
VOUT=0
-
0.5
nA
IQBATON
VBAT > VBATCO,
ENABLE=VDD, IOUT=0
-
42
nA
INTERFACE LOGIC SIGNAL CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
MIN
High Level Input Voltage
Low Level Input Voltage
VIH
VIL
-
High Level Output Voltage
VOH
VDD>VTH (see Figures 4
and 5) IL=10µA
Low Level Output Voltage
VOL
Logic Input Leakage Current
IIN
(1)
MAX
UNITS
VDD - 0.5
-
Volts
-
0.5
Volts
VDD 0.04V (1)
-
Volts
IL = -100µA
-
0.3
Volts
0<VIN<VDD
-1.0
+1.0
nA
RESET tracks VDD; RESET = VDD - (IOUT x ROUT).
RESET SIGNAL AC/DC CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
MIN
MAX
UNITS
VDD Rising to RESET
Rising
tRESETH
VDD rising from 2.8V TO 3.1V
in <10µs
60
200
ms
VDD Falling to RESET
Falling
Mode 1 TRIP V
VDD Rising
Mode 2 TRIP V (2)
VDD Rising
tRESETL
VDD falling from 3.1V to 2.8V
in <100ns
0.5
2
µs
VRESET
VMODE=GND
2.85
3.15
V
VRESET
VMODE = VDD/2
2.40
2.60
V
VMODE=VDD
60
100
VMODE=GND
45
75
VMODE = VDD/2
30
50
RESET Hysteresis
Voltage (3)
(VDD to RESET)
VHYST
mV
(2)
User-selectable trip voltage can be set by placing a resistor divider from the VMODE pin to GND. Refer to Figure 8.
(3)
The hysteresis is a function of trip level in Mode 2. Refer to Figure 9.
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 5 of 12
Preliminary
EnerChip CC CBC3105
CHARGE PUMP CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
ENABLE=VDD to Charge
Pump Active
ENABLE Falling to
Charge Pump Inactive
SYMBOL
tCPON
CONDITION
MIN
MAX
UNITS
60
80
µs
0
1
µs
-
120
KHz (1)
150
300
Ω
ENABLE to 3rd charge pump
pulse, VDD=3.3V
tCPOFF
-
Charge Pump Frequency
fCP
Charge Pump
Resistance
RCP
Delta VBAT, for IBAT charging
current of 1µA to 100µA
CFLY=0.1µF, CBAT=1.0µF
VCHG Output Voltage
VCP
CFLY=0.1µF, CBAT=1.0µF,
IOUT=1µA, Temp=+25ºC
4.075
4.125
V
VCHG Temp. Coefficient
TCCP
ICP
IOUT=1µA, Temp=+25ºC
-2.0
-2.4
mV/ºC
IBAT=1mA
CFLY=0.1µF, CBAT=1.0µF
1.0
-
mA
ENABLE=VDD
2.5
-
V
Charge Pump Current
Drive
Charge Pump on Voltage
(1)
VENABLE
fCP = 1/tCPPER
ADDITIONAL CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
LIMITS
UNITS
MIN
MAX
2.75
3.25
V
+1
+2
mV/ºC
VBAT Cutoff Threshold
Cutoff Temp. Coefficient
VBATCO
TCCO
IOUT=1µA
VBAT Cutoff Delay Time
tCOOFF
VBAT from 40mV above to
20mV below VBATCO
IOUT=1µA
18
-
ms
VOUT Dead Time, VDD
Rising (2)
VOUT Dead Time, VDD
Falling (2)
Bypass Resistance
tRSBR
IOUT=1mA
VBAT=4.1V
0.2
2.0
µs
tRSBF
VBAT=4.1V
0.2
2.0
µs
-
2.5
Ω
(2)
ROUT
-
-
Dead time is the time period when the VOUT pin is floating. Size the holding capacitor accordingly.
Note: All specifications contained within this document are subject to change without notice
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 6 of 12
Preliminary
EnerChip CC CBC3105
Important timing diagrams for the EnerChip CC relationship between EnerChip Switchover Timing and EnerChip
Disconnect from Load Timing are shown in Figure 4.
Figure 4: EnerChip CC Switchover and Disconnect Timing Diagrams
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 7 of 12
Preliminary
EnerChip CC CBC3105
Timing diagrams for the EnerChip CC relationship between VDD to RESET and ENABLE high to charge pump
becoming active are shown in Figure 5.
Figure 5: Timing Diagrams for VDD to RESET and Enable to Charge Pump Active.
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 8 of 12
Preliminary
EnerChip CC CBC3105
EnerChip CC Detailed Description
The EnerChip CC uses a charge pump to generate the supply voltage for charging the integrated energy storage
device. An internal FET switch with low RDSON is used to route VDD to VOUT during normal operation when main
power is above the switchover threshold voltage. When VDD is below the switchover threshold voltage, the
FET switch is shut off and VOUT is supplied by the EnerChip. An interrupt signal is asserted low prior to the
switchover.
Operating Modes
The EnerChip CC can be operated from various power supplies such as a primary source or a non-rechargeable
battery. With the ENABLE pin asserted high, the charge pump is active and charges the integrated EnerChip.
The EnerChip CC will be 80% charged within 10 minutes. Due to the rapid recharge it is recommended that,
once the EnerChip CC is fully charged, the user de-assert the ENABLE pin (i.e., force low) to reduce power
consumption. A signal generated from the MCU could be used to enable and disable the EnerChip CC.
When controlling the ENABLE pin by way of an external controller - as opposed to fixing the ENABLE line to VDD
- ensure that the ENABLE pin is forced low by the controller anytime the RESET line is low, which occurs when
the switchover threshold voltage is reached and the device is placed in backup mode. Although the internal
charge pump is designed to operate below the threshold switchover level when the ENABLE line is active, it
is recommended that the ENABLE pin be forced low whenever RESET is low to ensure no parasitic loads are
placed on the EnerChip while in this mode. If ENABLE is high or floating while VDD is in an indeterminate
state, bias currents within the EnerChip CC could flow, placing a parasitic load on the EnerChip that could
dramatically reduce the effective backup operating time.
The EnerChip CC supports 2 operational modes as shown in Figures 6 and 7.
Mode 1 Operation
For use in 3.3 volt systems. The VMODE pin should be tied directly to GND, as shown in Figure 6. This will set the
switchover threshold at approximately 3.0 volts.
Figure 6: CBC3105 Typical Circuit for Mode 1 Operation
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 9 of 12
Preliminary
EnerChip CC CBC3105
Mode 2 Operation
Figure 7 shows the circuitry for user-selectable switchover threshold to a value between 2.5 and 5.0 volts. Use
Figure 8 to determine the value of R1. To determine the amount of hysteresis from the EnerChip switchover
threshold, use Figure 9.
Figure 7: CBC3105 Typical Circuit for Mode 2 Operation
EnerChip charging and backup power switchover threshold for 2.5 to 5.5 volt operation is selected by changing
the value of R2 (see Figure 7). To determine the backup switchover point, set the value of R1 to 200kΩ and
choose the value of R2 according to Figure 8. For example, to set a 3.0V trip point: If R1=200 kΩ then R2 = R1
x 0.72 = 144kΩ. Figure 7 shows a Mode 2 circuit with standard value resistors of 200kΩ and 143kΩ.
To determine the backup switchover hysteresis for Mode 2 operation, use Figure 9.
Hysteresis in Battery Switchover Threshold
Voltage vs. R2/R1 Ratio
Battery Switchover Threshold Voltage vs. R2/R1
Ratio
0.09
0.08
5
0.07
4
3
Trip point
2
Hysteresis (Volts)
Switchover Threshold Voltage (Volts)
6
0.06
0.05
Hysteresis
0.04
0.03
0.02
1
0.01
0
0.1
0.2 0.3
0.4
0.5
0.6 0.7
0.8
0.9
1
1.1
R2/R1 Ratio
Figure 8: Mode 2 Resistor Selection Graph
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
R2/R1 Ratio
Figure 9: Mode 2 Hysteresis as a Function of R2/R1
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 10 of 12
Preliminary
EnerChip CC CBC3105
Real-Time Clock Application Circuit
The EnerChip CC as depicted in Figure 10 is a typical application circuit in a 3.3 volt system where backup and
power switchover circuitry for a real-time clock device is provided.
Figure 10: EnerChip CC Providing Backup Power for RTC with SPI Bus
CBC3105-R4C Evaluation Board
The CBC3105-R4C evaluation board as shown in the photo and schematic below is included in the CBC-EVAL05B EnerChip CC Evaluation Kit. This board is 16 pins in the same 24-pin DIP configuration as the EVAL05 CBC3150/CBC3112 eval board. This eval board is easy to use with proto-boards or sockets for design
evaluation.
Note that the Enerchip CBC3105 is shipped in a charged state and it is advised to not solder the CBC3105
evaluation board to another board as the high temperatures of a manual soldering process are outside the
CBC3105 operating specifications.
Figure 11: CBC3105-R4C Evaluation Board
Figure 12: CBC3105-R4C Eval Board Pin-out
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
Page 11 of 12
Preliminary
EnerChip CC CBC3105
CBC3105-R4C 4mm x 5mm x 0.9mm DFN Package Drawing
Lot Number
Part Number
Cymbet Logo
CBC3105
Labeling
Information
Placement
Dimensions in mm [inches].
Ordering Information - available for Last Time Buy until September 12, 2014
EnerChip CC Part Number
CBC3105-R4C
CBC3105-R4C-TR1
CBC3105-R4C-TR5
CBC3105-R4C-WP
CBC-EVAL-05B
Description
EnerChip CC 5µAh in 16-pin DFN
EnerChip CC 5µAh in 16-pin DFN
EnerChip CC 5µAh in 16-pin DFN
EnerChip CC Eval Kit
Notes
Shipped in Tube
Tape-and-Reel - 1000 pcs (TR1) or
5000 pcs (TR5) per reel
Waffle Pack
Not Available - No Last Time Buy
U.S. Patent No. 8,044,508. Additional U.S. and Foreign Patents Pending
Disclaimer of Warranties; As Is
The information provided in this data sheet is provided “As Is” and Cymbet Corporation disclaims all representations or warranties of any
kind, express or implied, relating to this data sheet and the Cymbet EnerChip product described herein, including without limitation, the
implied warranties of merchantability, fitness for a particular purpose, non-infringement, title, or any warranties arising out of course of
dealing, course of performance, or usage of trade. Cymbet EnerChip products are not authorized for use in life critical applications. Users
shall confirm suitability of the Cymbet EnerChip product in any products or applications in which the Cymbet EnerChip product is adopted
for use and are solely responsible for all legal, regulatory, and safety-related requirements concerning their products and applications and
any use of the Cymbet EnerChip product described herein in any such product or applications.
Cymbet, the Cymbet Logo, and EnerChip are Cymbet Corporation Trademarks
©2012-2014 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev G
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