Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 1, 4/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain — 18 dB Drain Efficiency — 33% IMD — - 34 dBc • Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain — 19 dB Drain Efficiency — 33% IMD — - 39 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 76°C, 4 W PEP, Two - Tone Case Temperature 79°C, 4 W CW RθJC °C/W 8.8 8.5 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MW6S004NT1 1 Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 mAdc) VGS(th) 1 2.3 5 Vdc Gate Quiescent Voltage(1) (VDS = 28 Vdc, ID = 50 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 50 mAdc) VDS(on) — 0.27 0.37 Vdc Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 30 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 21 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 25 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f1 = 1960 MHz, f2 = 1960.1 MHz, Two - Tone Test Power Gain Gps 16.5 18 20 dB Drain Efficiency ηD 28 33 — % Intermodulation Distortion IMD — - 34 - 28 dBc Input Return Loss IRL — - 12 - 10 dB Typical Performances (In Freescale 900 MHz Demo Board, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f = 900 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Gps — 19 — dB Drain Efficiency ηD — 33 — % Intermodulation Distortion IMD — - 39 — dBc Input Return Loss IRL — - 12 — dB 11/ 10 1. VGG = x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit Schematic. MW6S004NT1 2 RF Device Data Freescale Semiconductor R1 VSUPPLY VBIAS + R2 C8 C1 Z5 C7 C3 C4 C5 Z10 RF INPUT R3 Z1 Z2 Z3 Z6 Z8 Z4 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z9 RF OUTPUT C6 DUT 0.054″ x 0.430″ Microstrip 0.054″ x 0.137″ Microstrip 0.580″ x 0.420″ Microstrip 0.580″ x 0.100″ Microstrip 0.025″ x 0.680″ Microstrip 0.210″ x 0.100″ Microstrip Z7 Z8 Z9 Z10 PCB 0.210″ x 1.220″ Microstrip 0.054″ x 0.680″ Microstrip 0.054″ x 0.260″ Microstrip 0.025″ x 0.930″ Microstrip Arlon CuClad 250, 0.020″, εr = 2.5 Figure 1. MW6S004NT1 Test Circuit Schematic Table 6. MW6S004NT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 100 nF Chip Capacitor (1206) CDR33BX104AKWS Kemet C2, C3, C6, C7 9.1 pF 600B Chip Capacitors 600B9R1CW ATC C4, C5 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C8 10 µF, 35 V Tantalum Chip Capacitor T490D106K035AS Kemet R1 1 kΩ Chip Resistor (1206) R2 10 kΩ Chip Resistor (1206) R3 10 Ω Chip Resistor (1206) MW6S004NT1 RF Device Data Freescale Semiconductor 3 25 C8 R1 R2 C1 C7 C3 R3 C2 C4 C5 C6 MW6S004N Rev 3 Figure 2. MW6S004NT1 Test Circuit Component Layout MW6S004NT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 33 ηD 18 32 17.8 31 Gps 17.6 30 VDD = 28 Vdc, Pout = 2 W (Avg.) IDQ = 50 mA, 100 kHz Tone Spacing 17.4 17.2 IRL 17 −30 −8 −31 −12 −32 −33 16.8 16.6 IM3 16.4 1930 1940 1950 1960 1970 1980 −16 −20 −34 −24 −35 1990 −28 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 18.2 ηD, DRAIN EFFICIENCY (%) 34 IM3 (dBc) 18.4 f, FREQUENCY (MHz) 20 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Two - Tone Wideband Performance @ Pout = 2 Watts Avg. IDQ = 75 mA 62.5 mA 18 17 50 mA 37.5 mA 16 25 mA VDD = 28 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz Two−Tone Measurements 15 IMD, INTERMODULATION DISTORTION (dBc) 14 0.01 0.1 10 1 −30 −40 3rd Order −50 −60 5th Order −70 7th Order −80 20 10 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Intermodulation Distortion Products versus Output Power 47 P6dB = 38.73 dBm (7.465 W) VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA (f1 + f2)/2 = Center Frequency of 1960 MHz 3rd Order −40 −45 5th Order −50 Ideal 45 −35 −55 P3dB = 38.22 dBm (6.637 W) 43 41 P1dB = 37.61 dBm (5.768 W) 39 Actual 37 VDD = 28 Vdc, IDQ = 50 mA Pulsed CW, 8 µsec(on), 1 msec(off) f = 1960 MHz 35 7th Order −60 0.1 1 0.1 0.01 Pout, OUTPUT POWER (WATTS) PEP −25 −30 VDD = 28 Vdc, IDQ = 50 mA f1 = 1960 MHz, f2 = 1960.1 MHz Two−Tone Measurements −20 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) 19 −10 33 1 10 100 14 16 18 20 22 24 26 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MW6S004NT1 RF Device Data Freescale Semiconductor 5 50 40 −20 VDD = 28 Vdc, IDQ = 50 mA f = 1960 MHz, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) −30 30 −40 Gps 20 −50 ACPR 10 ACPR (dB) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS −60 ηD 0 −70 0.1 0.01 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single - Carrier CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 60 20 Gps 50 25_C 85_C 18 40 85_C 17 16 30 VDD = 28 Vdc IDQ = 50 mA f = 1960 MHz 20 ηD ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) −30_C TC = −30_C 19 10 15 0 14 0.01 1 0.1 10 Pout, OUTPUT POWER (WATTS) CW Figure 9. Power Gain and Drain Efficiency versus CW Output Power 19 IDQ = 50 mA f = 1960 MHz 0 20 −5 18 17 16.5 16 16 V 20 V 24 V 14 0 1 2 32 V 28 V VDD = 12 V 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain versus Output Power 8 −10 −15 16 15.5 15 S21 18 12 1800 VDD = 28 Vdc Pout = 2 W CW IDQ = 50 mA 1850 S11 (dB) 17.5 S21 (dB) Gps, POWER GAIN (dB) 18.5 22 −20 S11 1900 1950 2000 2050 −25 2100 f, FREQUENCY (MHz) Figure 11. Broadband Frequency Response MW6S004NT1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS x AMPS2) 107 106 105 104 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature MW6S004NT1 RF Device Data Freescale Semiconductor 7 f = 1990 MHz Zload Zo = 10 Ω f = 1930 MHz f = 1990 MHz Zsource f = 1930 MHz VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP f MHz Zsource W Zload W 1930 1.96 - j5.34 8.78 + j6.96 1960 1.89 - j5.10 8.93 + j7.46 1990 1.82 - j4.85 9.11 + j7.97 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MW6S004NT1 8 RF Device Data Freescale Semiconductor Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) IDQ = 50 mA f MHz MH S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 500 0.649 - 116.340 7.902 105.420 0.056 - 73.750 0.548 - 33.570 550 0.695 - 121.680 7.502 98.790 0.053 - 80.570 0.593 - 41.480 600 0.733 - 126.560 7.111 92.380 0.049 - 87.010 0.632 - 48.890 650 0.770 - 131.340 6.699 86.290 0.045 - 93.280 0.669 - 56.000 700 0.800 - 135.740 6.302 80.450 0.041 - 99.120 0.701 - 62.810 750 0.827 - 140.030 5.922 74.850 0.038 - 104.850 0.727 - 69.290 800 0.848 - 143.950 5.552 69.630 0.035 - 110.110 0.750 - 75.350 850 0.866 - 147.690 5.220 64.580 0.032 - 115.220 0.770 - 81.130 900 0.882 - 151.140 4.891 59.970 0.029 - 119.960 0.786 - 86.570 950 0.895 - 154.560 4.597 55.490 0.026 - 124.790 0.800 - 91.730 1000 0.907 - 157.590 4.315 51.240 0.024 - 129.090 0.813 - 96.660 1050 0.916 - 160.540 4.060 47.170 0.022 - 133.370 0.824 - 101.340 1100 0.923 - 163.310 3.819 43.340 0.020 - 137.460 0.833 - 105.790 1150 0.929 - 165.930 3.601 39.650 0.018 - 141.440 0.840 - 110.050 1200 0.935 - 168.430 3.398 36.110 0.017 - 145.330 0.847 - 114.170 1250 0.938 - 170.770 3.210 32.740 0.015 - 149.540 0.851 - 118.060 1300 0.942 - 173.030 3.036 29.490 0.014 - 153.430 0.856 - 121.880 1350 0.945 - 175.140 2.875 26.360 0.013 - 157.460 0.859 - 125.520 1400 0.948 - 177.170 2.728 23.330 0.012 - 161.910 0.863 - 129.020 1450 0.951 - 179.090 2.590 20.440 0.011 - 166.180 0.866 - 132.390 1500 0.953 179.030 2.464 17.640 0.010 - 170.630 0.869 - 135.650 1550 0.954 177.270 2.347 14.920 0.009 - 174.890 0.872 - 138.760 1600 0.955 175.570 2.240 12.320 0.008 179.950 0.875 - 141.750 1650 0.956 173.980 2.139 9.740 0.008 173.920 0.877 - 144.650 1700 0.957 172.350 2.047 7.250 0.007 167.710 0.880 - 147.480 1750 0.957 170.800 1.958 4.810 0.007 161.810 0.882 - 150.180 1800 0.958 169.340 1.879 2.440 0.006 155.370 0.884 - 152.760 1850 0.959 167.920 1.806 0.260 0.006 148.940 0.886 - 155.230 1900 0.959 166.510 1.736 - 1.980 0.005 142.630 0.887 - 157.580 1950 0.960 165.200 1.668 - 4.310 0.005 136.740 0.888 - 160.050 2000 0.959 163.800 1.611 - 6.240 0.005 129.910 0.890 - 162.070 2050 0.959 162.420 1.555 - 8.290 0.005 123.810 0.891 - 164.190 2100 0.958 161.170 1.504 - 10.270 0.005 118.200 0.892 - 166.140 2150 0.958 159.840 1.456 - 12.210 0.005 112.740 0.893 - 168.060 2200 0.957 158.560 1.412 - 14.130 0.005 108.460 0.894 - 169.840 2250 0.957 157.160 1.372 - 16.010 0.005 103.840 0.896 - 171.610 2300 0.955 155.870 1.334 - 17.870 0.005 99.310 0.896 - 173.260 2350 0.954 154.510 1.300 - 19.700 0.005 95.360 0.897 - 174.830 2400 0.953 153.120 1.268 - 21.510 0.005 91.030 0.898 - 176.390 2450 0.953 151.730 1.238 - 23.250 0.005 87.460 0.899 - 177.840 MW6S004NT1 RF Device Data Freescale Semiconductor 9 Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) (continued) IDQ = 50 mA f MHz MH S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2500 0.952 150.340 1.211 - 25.120 0.006 84.160 0.899 - 179.270 2550 0.950 149.010 1.187 - 26.920 0.006 80.780 0.897 179.420 2600 0.949 147.380 1.166 - 28.650 0.006 77.880 0.897 178.120 2650 0.948 145.920 1.144 - 30.420 0.007 74.670 0.898 176.840 2700 0.944 144.200 1.121 - 32.310 0.007 71.360 0.896 175.480 2750 0.944 142.790 1.105 - 34.230 0.007 67.980 0.897 174.060 2800 0.943 141.020 1.088 - 36.000 0.007 63.950 0.897 172.930 2850 0.941 139.410 1.073 - 37.870 0.007 61.230 0.896 171.630 2900 0.940 137.640 1.058 - 39.760 0.008 59.810 0.896 170.330 2950 0.938 135.900 1.045 - 41.680 0.008 58.280 0.896 169.040 3000 0.937 133.860 1.032 - 43.610 0.008 56.740 0.895 167.510 MW6S004NT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A F 3 B D 1 2 R L NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. 4 N K 0.35 (0.89) X 45_" 5 _ Q 10_DRAFT U H ZONE V ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉÉÉÉÉÉ 4 ZONE W C Y Y 2 1 3 G P S STYLE 1: PIN 1. 2. 3. 4. ZONE X VIEW Y - Y DRAIN GATE SOURCE SOURCE E DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 CASE 466 - 03 ISSUE D PLD 1.5 PLASTIC MW6S004NT1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved. MW6S004NT1 Document Number: MW6S004N Rev. 1, 4/2006 12 RF Device Data Freescale Semiconductor