DISCRETE SEMICONDUCTORS DATA SHEET BLF546 UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF546 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability handbook, halfpage 1 • Designed for broadband operation. 4 d g s g DESCRIPTION 5 2 Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Top view DESCRIPTION 1 drain 1 2 gate 1 3 gate 2 4 drain 2 5 source MAM395 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT268 PIN d 3 Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B October 1992 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 500 28 80 > 11 > 50 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 9 A Ptot total power dissipation 145 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C; total device; − both sections equally loaded THERMAL RESISTANCE SYMBOL THERMAL RESISTANCE PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 1.2 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.25 K/W MRA995 102 handbook, halfpage MDA519 200 handbook, halfpage Ptot (W) 160 ID (A) (2) 120 (1) 10 (2) (1) 80 40 1 1 10 VDS (V) 0 102 0 80 120 Th (°C) 160 (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. Total device; both sections equally loaded. Fig.2 DC SOAR. October 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)DSS drain-source breakdown voltage MIN. TYP. MAX. UNIT VGS = 0; ID = 20 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 80 mA; VDS = 10 V 1 − 4 V gfs forward transconductance ID = 2.4 A; VDS = 10 V 1.2 1.7 − S RDS(on) drain-source on-state resistance ID = 2.4 A; VGS = 10 V − 0.4 0.6 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 10 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 60 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 46 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 15 − pF MDA520 12 MDA521 12 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 8 8 4 4 0 −4 10−2 10−1 1 ID (A) 0 10 0 4 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. October 1992 4 8 12 VGS (V) 16 Drain current as a function of gate-source voltage, typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 MDA522 0.8 MDA523 250 handbook, halfpage handbook, halfpage C (pF) RDSon (Ω) 200 0.6 150 0.4 100 0.2 Cis 50 0 Cos 0 0 40 80 120 Tj (°C) 160 1 10 ID = 2.4 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values per section. MDA524 80 handbook, halfpage Crs (pF) 60 40 20 0 0 10 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. October 1992 5 20 30 VDS (V) 40 Input and output capacitance as functions of drain-source voltage, typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.25 K/W, unless otherwise specified. RF performance in a common source, class-B, push-pull circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 500 28 2 × 80 80 > 11 typ. 13 > 50 typ. 60 Ruggedness in class-B operation The BLF546 is capable of withstanding a full load mismatch corresponding to VSWR = 10 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. MDA525 25 Gp (dB) handbook, halfpage 20 100 ηC (%) MDA526 120 handbook, halfpage PL (W) 80 Gp 80 15 60 ηC 10 40 40 5 20 0 40 60 80 100 PL (W) 0 120 0 0 Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; ZL = 2.3 + j2.7 Ω (per section); f = 500 MHz. Fig.9 8 12 PIN (W) 16 Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; ZL = 2.3 + j2.7 Ω (per section); f = 500 MHz. Power gain and efficiency as functions of load power, typical values. October 1992 4 Fig.10 Load power as a function of input power, typical values. 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 handbook, full pagewidth C12 +VD C13 R1 VBIAS R2 R7 C8 C7 L20 C14 ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, R3 L16 D.U.T. L1 50 Ω input C1 L4 L6 L8 L10 L12 L14 L18 L24 C23 L22 L27 L2 C3 C4 C5 C6 C9 C18 C19 C20 C21 C22 C1 L3 L26 50 Ω output C24 L5 L7 L9 L11 L13 L15 L19 BLF546 L23 L25 L28 L17 R4 C15 C10 C11 R8 L21 MDA530 VBIAS R5 C16 R6 C17 f = 500 MHz. +VD Fig.11 Test circuit for class-B operation. List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE C1, C2 multilayer ceramic chip capacitor (note 1) 33 pF, 500 V C3 multilayer ceramic chip capacitor (note 1) 11 pF, 500 V C4, C6, C21, C22 film dielectric trimmer 2 to 9 pF C5 multilayer ceramic chip capacitor (note 2) 12 pF, 500 V C7, C10, C14, C15 multilayer ceramic chip capacitor (note 1) 390 pF, 500 V C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF, 50 V C9 multilayer ceramic chip capacitor (note 2) 39 pF, 500 V C13, C16 electrolytic capacitor 4.7 µF, 63 V C18, C19 multilayer ceramic chip capacitor (note 2) 18 pF, 500 V October 1992 7 DIMENSIONS CATALOGUE NO. 2222 809 09005 2222 852 47104 2222 030 38478 Philips Semiconductors Product specification UHF push-pull power MOS transistor COMPONENT BLF546 DESCRIPTION VALUE DIMENSIONS C20 multilayer ceramic chip capacitor (note 2) 15 pF, 500 V C23, C24 multilayer ceramic chip capacitor (note 1) 15 pF, 500 V L1, L3, L26, L28 stripline (note 3) 50 Ω 55.6 × 2.4 mm L2 semi-rigid cable (note 4) 50 Ω ext. dia. 2 mm ext. conductor length 55.6 mm L4, L5 stripline (note 3) 42 Ω 12 × 3 mm L6, L7 stripline (note 3) 42 Ω 26.5 × 3 mm L8, L9 stripline (note 3) 42 Ω 5.5 × 3 mm L10, L11 stripline (note 3) 42 Ω 6 × 3 mm L12, L13 stripline (note 3) 42 Ω 3 × 3 mm L14, L15 stripline (note 3) 42 Ω 7 × 3 mm L16, L17 3 turns enamelled 1 mm copper wire 15.6 nH length 8.5 mm int. dia. 5.4 mm leads 2 × 5 mm L18, L19 stripline (note 3) 42 Ω 12 × 3 mm L20, L21 grade 3B Ferroxcube RF choke L22, L23 stripline (note 3) 42 Ω 20 × 3 mm L24, L25 stripline (note 3) 42 Ω 14 × 3 mm L27 semi-rigid cable (note 5) 50 Ω ext. dia. 2 mm ext. conductor length 55.6 mm CATALOGUE NO. 4312 020 36642 R1, R5 0.4 W metal film resistor 11.5 kΩ R2, R6 10 turns cermet potentiometer 50 kΩ 2322 151 71153 R3, R4 0.4 W metal film resistor 10 kΩ 2322 151 71003 R7, R8 1 W metal film resistor 10 Ω 2322 153 51009 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2); thickness 1⁄32 inch. 4. Semi-rigid cable L2 is soldered on to stripline L3. 5. Semi-rigid cable L27 is soldered on to stripline L28. October 1992 8 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 200 handbook, full pagewidth straps 85 straps VD C12 R2 C13 L20 L2 L3 C7 C8 C1 C2 L1 R3 L10 L12 L14 C6 C9 C18 L13 L15 L11 L9 R4 L8 L4 C3 L5 C4 L6 L7 C5 C10 C11 C15 L27 R7 C14 L28 L16 C20 L18 C19 L19 L17 C21 C23 L24 L22 L23 C22 L25 C24 R8 L26 L21 C16 R6 C17 MDA518 VD The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm. Fig.12 Component layout for 500 MHz test circuit. October 1992 9 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 MDA527 2 Zi handbook, halfpage ri (Ω) 0 (Ω) 8 xi −2 6 −4 4 −6 2 −8 MDA528 10 ZL handbook, halfpage RL XL 0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; PL = 80 W. Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; PL = 80 W. Fig.13 Input impedance as a function of frequency (series components), typical values per section. Fig.14 Load impedance as a function of frequency (series components), typical values per section. MDA529 30 handbook, halfpage Gp (dB) 20 10 0 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA; PL = 80 W. Fig.15 Power gain as a function of frequency, typical values per section. October 1992 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A D A F 5 U1 B q C w2 M C H1 1 H c 4 P U2 E w1 M A B A 2 3 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E e F H H1 p Q q U1 U2 w1 w2 w3 mm 4.91 4.19 1.66 1.39 0.13 0.07 12.96 12.44 6.48 6.22 6.45 2.04 1.77 17.02 16.00 8.23 7.72 3.43 3.17 2.67 2.41 18.42 24.90 24.63 6.61 6.35 0.51 1.02 0.26 inches 0.193 0.165 0.065 0.005 0.055 0.003 0.510 0.490 0.255 0.080 0.670 0.254 0.245 0.070 0.630 0.105 0.725 0.095 0.980 0.970 0.260 0.250 0.02 0.04 0.01 OUTLINE VERSION 0.324 0.135 0.304 0.125 REFERENCES IEC JEDEC EIAJ SOT268A October 1992 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1992 12