PD - 95549A
IRFR13N15DPbF
IRFU13N15DPbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
l Lead-Free
l
VDSS
150V
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
RDS(on) max
ID
0.18Ω
14A
D-Pak
IRFR13N15D
I-Pak
IRFU13N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
14
9.8
56
86
0.57
± 30
3.8
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Typical SMPS Topologies
l
Telecom 48V input Active Clamp Forward Converter
Notes through
www.irf.com
are on page 10
1
12/9/04
IRFR/U13N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.17
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.18
Ω
VGS = 10V, ID = 8.3A
5.5
V
VDS = VGS, ID = 250µA
25
VDS = 150V, VGS = 0V
µA
250
VDS = 120V, VGS = 0V, TJ = 150°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
19
5.5
9.4
8.0
26
12
11
620
130
38
780
62
110
Max. Units
Conditions
–––
S
VDS = 50V, ID = 8.3A
29
ID = 8.3A
8.2
nC
VDS = 120V
14
VGS = 10V,
–––
VDD = 75V
–––
I
D = 8.3A
ns
–––
RG = 11Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
130
8.3
8.6
mJ
A
mJ
Typ.
Max.
Units
–––
–––
–––
1.75
50
110
°C/W
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
14
––– –––
showing the
A
G
integral reverse
––– –––
56
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 8.3A, VGS = 0V
––– 110 –––
ns
TJ = 25°C, IF = 8.3A
––– 520 –––
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRFR/U13N15DPbF
100
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
10
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
5.0V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
5.0V
1
0.1
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 175 ° C
10
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
100
5
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
0.1
20µs PULSE WIDTH
TJ = 175 ° C
11
ID = 14A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U13N15DPbF
10000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
1000
Ciss
Coss
100
Crss
ID = 8.3A
VDS = 120V
VDS = 75V
VDS = 30V
16
12
8
4
10
1
10
100
FOR TEST CIRCUIT
SEE FIGURE 13
1000
0
VDS , Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175 °C
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 25 °C
1
10
100us
1ms
1
0.1
0.2
10ms
TC = 25 ° C
TJ = 175 ° C
Single Pulse
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
1.4
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRFR/U13N15DPbF
14
V DS
VGS
I D , Drain Current (A)
12
D.U.T.
RG
10
RD
+
-VDD
VGS
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
VDS
2
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
IRFR/U13N15DPbF
240
TOP
200
BOTTOM
160
120
80
40
0
25
tp
ID
3.4A
5.9A
8.3A
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRFR/U13N15DPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRFR/U13N15DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF R120
WITH AS SEMBLY
LOT CODE 1234
AS SEMBLED ON WW 16, 1999
IN T HE ASS EMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECT IF IER
LOGO
Note: "P" in ass embly line position
indicates "Lead-F ree"
IRFU120
916A
12
34
ASS EMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12
AS S EMBLY
LOT CODE
8
34
DAT E CODE
P = DESIGNAT ES LEAD-F REE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 16
A = AS SEMBLY S IT E CODE
www.irf.com
IRFR/U13N15DPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120
WIT H AS SEMB LY
LOT CODE 5678
ASS EMBLED ON WW 19, 1999
IN T HE ASS EMBLY LINE "A"
INT ERNAT IONAL
RECT IF IER
LOGO
PART NUMBER
IRF U120
919A
56
78
AS SEMB LY
LOT CODE
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
56
AS S EMB LY
LOT CODE
www.irf.com
78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS S EMB LY SIT E CODE
9
IRFR/U13N15DPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 3.8mH
RG = 25Ω, IAS = 8.3A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 8.3A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/