IP IPT1208-BEF High current density due to double mesa technology Datasheet

IPT1208-xxF
IP Semiconductor Co., Ltd.
High current density due to double mesa technology; SIPOS
and Glass Passivation. IPT1208-xx series are suitable for
general purpose AC Switching. They can be used as an
ON/OFF function In application such as static relays,
heating regulation, Induction motor stating circuits… or
for phase Control operation light dimmers, motor speed
Controllers.
The IPT1208-xxF(Insulated version) series are isolated
internally, they provided a 2500V RMS isolation voltage from
all three terminals to external heatsink..
TO-220F
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
12
A
VDRM / VRRM
800
V
VTM
≤ 1.55
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Symbol
Value
Unit
Tstg
Tj
-40 to +150
-40 to +125
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
VDSM
VRSM
900
900
V
RMS on–state current
(Full sine wave)
Tc = 79 ℃
IT(RMS)
12
A
ITSM
126
120
A
I²t
78
A²s
dI / dt
50
A/us
IGM
4
A
PG(AV)
1
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
tp = 10ms
Critical Rate of rise of on-state current
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
1
IPT1208-xxF
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
Symbol
Test Condition
IGT
VD = 12V RL = 30Ω
VGT
VGD
IPT1208-xxF
Quadrant
VD=VDRM, RL=3.3KΩ,
Tj = 125 ℃
dV/dt
BE
5
10
35
50
I – II – III
MAX
1.3
V
I – II – III
MIN
0.2
V
IG = 1.2 IGT
10
25
50
70
15
30
60
80
MAX
mA
mA
IT = 100mA
MAX
10
15
35
50
mA
VD = 67% VDRM gate open Tj = 125 ℃
MIN
20
40
500
1000
V/us
3.5
6.5
-
-
1.0
2.9
-
-
-
-
6.5
12
(dV/dt) c=0.1V/us Tj = 125 ℃
(dI/dt)c
CE
MAX
II
IH
SE
I – II – III
I – III
IL
Unit
TE
(dV/dt) c=10V/us Tj = 125 ℃
MIN
Without snubber Tj = 125 ℃
A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value(MAX)
Unit
VTM
ITM = 17A, t p = 380uS
Tj = 125 ℃
1.55
V
IDRM
VD = VDRM
Tj = 125 ℃
5
uA
IRRM
VR = VRRM
Tj = 125 ℃
1
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case(AC)
3.3
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
2
IPT1208-xxF
PACKAGE MECHANICAL DATA
TO-220F
Dimensions
Ref
Millimeters
Min
Typ
Inches
Max
Min
4.7
0.169
0.83
0.029
Typ
Max
A
4.3
B
0.74
C
0.5
0.75
0.020
0.030
C2
2.4
2.7
0.094
0.106
C3
2.5
2.9
0.098
0.114
D
8.6
9.2
0.338
0.362
E
9.7
10.3
0.382
0.406
G
5.0
5.2
0.197
0.205
H
28.0
29.8
11.0
11.7
L1
L2
V1
0.8
3.63
3.46
0.185
0.031
0.033
0.143
3.63
0.136
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
0.143
40º
3
IPT1208-xxF
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
4
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