Pan Jit BAS116W Surface mount, low leakage switching diode Datasheet

DATA SHEET
BAS116W/BAW156W/BAV170W/BAV199W
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE
100 Volts
POWER
200mWatts
SOT-323
Unit: inch (mm)
.087(2.2)
.070(1.8)
.087(2.2)
.078(2.0)
Suface mount package ideally suited for automatic insertion.
Very low leakage current. 2pA typical at VR=75V.
Low capacitance. 2pF max at VR=0V, f=1MHz
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
.004(.10)MIN.
FEATURES
•
•
•
•
.054(1.35)
.045(1.15)
Pb free: 98.5% Sn above
.006(.15)
.002(.05)
.056(1.40)
.047(1.20)
MECHANICAL DATA
.004(.10)MAX.
• Terminals: Solderable per MIL-STD-202, Method 208
.016(.40)
.078(.20)
• Approx weight: 0.0052 gram
.044(1.1)
.035(0.9)
• Case: SOT-323 plastic
• Marking: BAS116W :P1,BAW156W :P4,BAV170W :P3,BAV199W :P2
ABSOLUTE RATINGS (each diode)
P A R A M E TE R
S ym b o l
V a lu e
U n its
VR
75
V
V RM
100
V
IF
0 .2
A
I FS M
2 .0
A
S ym b o l
V a lu e
U n its
P o w e r D is s ip a tio n (N o te 1 )
P TO T
200
m W
T h e rm a l R e s is ta n c e , J u n c tio n to A m b ie n t (N o te 1 )
R θ JA
625
J u n c tio n Te m p e ra tu re
TJ
-5 5 to 1 5 0
O
C
S to ra g e Te m p e ra tu re
T S TG
-5 5 to 1 5 0
O
C
R e ve rs e V o lta g e
P e a k R e ve rs e V o lta g e
C o n tin u o u s F o rw a rd C u rre n t
N o n -re p e titive P e a k F o rw a rd S u rg e C u rre n t a t t= 1 .0 u s
THERMAL CHARACTERISTICS
P A R A M E TE R
NOTE:
SINGLE
COMMON ANODE
BAS116W
BAW156W
COMMON CATHODE
O
C /W
SERIES
1. FR-5 Board = 1.0 x 0.75 x 0.062 in.
STAD-JUN.18.2004
BAV170W
BAV199W
PAGE . 1
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
P A R A M E TE R
S ym b o l
R e ve rs e B re a k d o w n V o lta g e
V (B R )
Te s t C o n d itio n
M IN .
IR = 1 0 0 uA
TYP.
M AX.
U n its
75
R e ve rs e C u rre n t
IR
V R =75 V
V R = 7 5 V ,T J = 1 5 0
F o rw a rd V o lta g e
VF
IF = 1 m A
IF = 1 0 m A
IF = 5 0 m A
IF = 1 5 0 m A
To ta l C a p a c ita n c e
CT
R e ve rs e R e c o ve ry T im e
TR R
V
5
80
nA
0 .9
1 .0
1 .1
1 .2 5
V
V R = 0 V , f= 1 M H Z
2 .0
pF
IF = IR = 1 0 m A , R L = 1 0 0 Ω
3 .0
us
O
0 .0 0 2
8 .0
C
CHARACTERISTIC CURVES (each diode)
1000
I F , Forward current (mA)
I R , Reverse Leakage(nA)
10
1.0
0.1
V R =75V
0.01
100
O
T A =-25 C
10
O
T A =75 C
1.0
O
O
T A =125 C
0.001
0
50
100
150
200
0.1
0.2
0.4
0.6
T A =25 C
0.8
1.0
1.2
V F , Forward Voltage (V)
Tj, Junction Temperature (Deg C)
Fig. 1-Reverse Leakage vs. Junction Temperature
Fig. 2-Forward Current vs. Forward Voltage
C T , Total Capacitance (pF)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
V R , Reverse Voltage (V)
Fig. 3- Total capacitance vs. Reverse Voltage
STAD-JUN.18.2004
PAGE . 2
MOUNTING PAD LAYOUT
SOT-323
0.075(1.9)
0.035(0.9)
Unit: inch (mm)
0.025(0.65)
0.028(0.7)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3.0K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-JUN.18.2004
PAGE . 3
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