Boca BC556B Pnp silicon planar epitaxial transistor Datasheet

IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC 556, A, B
BC 557, 8, A, B, C
TO-92
EBC
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
APPLICATION
PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio
Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing
Circuits of Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL
BC556
VCEO
65
Collector -Emitter Voltage
VCES
80
Collector -Emitter Voltage
VCBO
80
Collector -Base Voltage
VEBO
Emitter -Base Voltage
IC
Collector Current Continuous
ICM
Peak
IBM
Base Current -Peak
IEM
Emitter Current- Peak
PTA
Power Dissipation@ Ta=25 degC
Derate Above 25 deg C
Tstg
Storage Temperature
Tj
Junction Temperature
THERMAL RESISTANCE
Rth(j-a)
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
BC556
VCEO
IC=2mA,IB=0
>65
Collector -Emitter Voltage
VCBO
IC=100uA.IE=0
>80
Collector -Base Voltage
VEBO
IE=100uA, IC=0 ALL
Emitter-Base Voltage
ICBO
VCB=30V, IE=0 ALL
Collector-Cut off Current
ICES
Collector-Cut off Current
Continental Device India Limited
ICES
BC557
45
50
50
5.0
100
200
200
200
500
4.0
-65 to +150
150
250
UNITS
V
V
V
V
mA
mA
mA
mA
mW
mW/deg C
deg C
deg C
deg C/W
BC557
BC558
>45
>30
>50
>30
>5.0
<15
UNITS
V
V
V
nA
<5.0
uA
nA
nA
nA
Tj=150 deg C
VCB=30V, IE=0 ALL
VCE=80V, VBE=0
VCE=50V, VBE=0
VCE=30V, VBE=0
<15
-
<15
-
TJ=125 deg C
VCE=80V, VBE=0
VCE=50V, VBE=0
VCE=30V, VBE=0
<4.0
-
-
Data Sheet
BC558
30
30
30
<15
<4.0
-
<4.0
uA
uA
uA
Page 1 of 4
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
BC556-558
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
hFE
IC=10uA,VCE=5V
typ90
DC Current Gain
A
typ150
B
typ270
C
IC=2mA,VCE=5V
75-475
BC556
75-800
BC557,8
110-220
A
200-450
B
420-800
C
IC=100mA,VCE=5V
typ120
A
typ200
B
typ400
C
VCE(Sat) IC=10mA,IB=0.5mA
<0.30
Collector Emitter Saturation Voltage
IC=100mA,IB=5mA
<0.65
VBE(Sat) IC=10mA,IB=0.5mA
typ0.70
Base Emitter Saturation Voltage
IC=100mA,IB=5mA
typ0.90
VBE(on)
IC=2mA,VCE=5V
0.55-0.70
Base Emitter on Voltage
IC=10mA,VCE=5V
<0.82
DYNAMIC CHARACTERISTICS
ft
IC=10mA, VCE=5V
typ150
Transistors Frequency
f=100MHz
Ccbo
VCB=10V, f=1MHz
<6.0
Collector out-put Capacitance
Cib
VEB=0.5V, f=1MHz
typ9.0
Emitter Input Capacitance
NF
IC=0.2mA, VCE=5V
<10
Noise Figure
Rs=2kohm, f=1kHZ
B=200Hz
Small Signal Current Gain
hfe
ALL f=1KHz
IC=2mA, VCE=5V
Input Impedance
hie
IC=2mA, VCE=5V
Voltage Feedback Ratio
hre
IC=2mA, VCE=5V
Out put Adimttance
hoe
IC=2mA, VCE=5V
A
B
C
A
B
C
A
B
C
A
B
C
typ220
typ330
typ600
1.6-4.5
3.2-8.5
6.0-15
typ1.5
typ2.0
typ3.0
<30
<60
<110
UNITS
V
V
V
V
V
V
MHz
pF
pF
dB
khoms
X`10-4
umhos
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
Continental Device India Limited
Data Sheet
Page 2 of 4
TO-92 Plastic Package
B
TO-92 Transistors on Tape and Ammo Pack
Amm o Pack Style
A
M EC H AN IC AL D ATA
h
h
(p)
A1
3 2 1
D
C arrier
Strip
P
T
FEE
Ad hesive Tape o n Top Side
LA BE L
A
H1
FL AT SIDE
8.2"
W2
H0
L
Wo
W1
W
K
F1
t
F2
Do
F
E
3
2
1
PIN CONFIGURATION
1. EMITTER
2. BASE
3. COLLECTOR
All diminsions in mm.
C
H
3 2 1
DIM
MIN.
MAX.
A
4.32
5.33
B
C
D
E
4.45
3.18
0.41
0.35
5.20
4.19
0.55
0.50
F
G
H
K
5 DEG
1.14
1.40
1.14
1.53
12.70
—
Flat S id e o f Tra nsis tor and
Ad hesive Tape V isible
20 00 pcs./A m m o P ack
All dim ensions in m m unless specified otherwise
ITEM
SEC AA
F
F
7"
Po
A A
G
1 .7
P2
D
D
1 3"
t1
SYM BO L
BOD Y W IDT H
BOD Y H EIG HT
BOD Y T HICKNESS
PITCH OF COM PO NENT
FEED HO LE PITCH
A1
A
T
P
Po
FEED HO LE CENTR E TO
CO M PONENT CENTR E
P2
DISTAN CE BET WEEN O UTER
LEADS
CO M PONENT ALIGN M EN T
TAPE W IDTH
HO LD-D OW N TAPE W IDT H
HO LE PO SITIO N
F
h
W
Wo
W1
HO LD-D OW N TAPE PO SIT ION
LEAD W IRE CLINCH H EIG HT
CO M PONENT HEIGH T
LENG TH O F SNIPPED LEAD S
FEED HO LE DIAM ETER
TO TAL TAPE TH ICKNESS
LEAD - TO - LEAD DISTAN CEF1,
W2
Ho
H1
L
Do
t
F2
CLINC H HEIGH T
PULL - O UT FO RCE
H2
(P)
SPEC IFICAT ION
REM ARKS
M IN. NO M . M AX. TO L .
4.8
4.0
5.2
4.8
4.2
3.9
12.7
±1
12.7
± 0.3 CUM U LATIVE PIT CH
ERRO R 1.0 m m /20
PITCH
6.35
± 0.4 TO BE M EASURED AT
BOT TOM O F C LINCH
+0.6
5.08
-0.2
0
1
AT TO P OF BODY
18
± 0.5
6
± 0.2
9
+0.7
-0.5
0.5
± 0.2
16
± 0.5
23.25
11.0
4
± 0.2
1.2
t1 0.3 - 0 .6
2.54
+0.4
-0.1
3
6N
N OT ES
1 . M A X IM U M A L IG N M E N T D E V IAT IO N B E T W E E N L E A D S N O T TO B E G R E AT E R T H A N 0 .2 m m .
2 . M A X IM U M N O N -C U M U L AT IV E VA R IAT IO N B E T W E E N TA P E F E E D H O L E S S H A L L N O T E X C E E D 1 m m IN 2 0
P IT C H E S .
3 . H O L D D O W N TA P E N O T T O E X C E E D B E Y O N D T H E E D G E (S ) O F C A R R IE R TA P E A N D T H E R E S H A L L B E N O
E X P O S U R E O F A D H E S IV E .
4 . N O M O R E T H A N 3 C O N S E C U T IV E M IS S IN G C O M P O N E N T S A R E P E R M IT T E D .
5 . A TA P E T R A IL E R , H AV IN G AT L E A S T T H R E E F E E D H O L E S A R E R E Q U IR E D A F T E R T H E L A S T C O M P O N E N T.
6 . S P L IC E S S H A L L N O T IN T E R F E R E W IT H T H E S P R O C K E T F E E D H O L E S .
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
Packing Detail
PACKAGE
TO-92 Bulk
TO-92 T&A
STANDARD PACK
INNER CARTON BOX
OUTER CARTON BOX
Details
Net Weight/Qty
Size
Qty
Size
1K/polybag
2K/ammo box
200 gm/1K pcs
645 gm/2K pcs
3" x 7.5" x 7.5"
12.5" x 8" x 1.8"
5.0K
2.0K
17" x 15" x 13.5"
17" x 15" x 13.5"
Continental Device India Limited
Data Sheet
Qty
Gr Wt
80.0K
32.0K
23 kgs
12.5 kgs
Page 3 of 4
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