DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055ELE, NP88N055KLE NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP88N055ELE-E1-AY Note1, 2 NP88N055ELE-E2-AY Note1, 2 NP88N055KLE-E1-AY Note1 NP88N055KLE-E2-AY Note1 NP88N055CLE-S12-AZ Note1, 2 NP88N055DLE-S12-AY Note1, 2 NP88N055MLE-S18-AY Note1 NP88N055NLE-S18-AY Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A) (TO-262) RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low input capacitance Ciss = 9700 pF TYP. • Built-in gate protection diode (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D13933EJ7V0DS00 (7th edition) Date Published October 2007 NS Printed in Japan 1999, 2000, 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±88 A ID(pulse) ±352 A Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Note2 Total Power Dissipation (TA = 25°C) PT 1.8 W Total Power Dissipation (TC = 25°C) PT 288 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Note3 IAS 75/88 A Note3 EAS 562/232 mJ Storage Temperature Single Avalanche Current Single Avalanche Energy Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.52 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W 2 Data Sheet D13933EJ7V0DS NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 44 A 38 75 Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 44 A 4.1 5.2 mΩ RDS(on)2 VGS = 5.0 V, ID = 44 A 4.8 6.3 mΩ RDS(on)3 VGS = 4.5 V, ID = 44 A 5.1 6.8 mΩ Input Capacitance Ciss VDS = 25 V, 9700 14600 pF Output Capacitance Coss VGS = 0 V, 1100 1700 pF 490 890 pF f = 1 MHz S Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) VDD = 28 V, ID = 44 A, 37 82 ns tr VGS = 10 V, 22 56 ns 180 360 ns 35 88 ns VDD = 44 V, VGS = 10 V, ID = 88 A 160 240 nC QG2 VDD = 44 V, 88 140 nC QGS VGS = 5.0 V, 27 nC 48 nC IF = 88 A, VGS = 0 V 1.0 V Rise Time Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG1 Gate to Source Charge RG = 1 Ω ID = 88 A Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr IF = 88 A, VGS = 0 V, 62 ns Qrr di/dt = 100 A/μs 120 nC Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D13933EJ7V0DS 3 NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE TYPICAL CHARACTERISTICS (TA = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 350 100 80 60 40 20 0 0 25 50 75 300 250 200 150 100 50 0 100 125 150 175 200 25 0 Figure3. FORWARD BIAS SAFE OPERATING AREA 100 PW ID(pulse) 10 10 Po Lim wer DC ite Dis d sip 0μ = 10 s 1m μs s ms ati on 10 1 Single pulse TC = 25°C 0.1 0.1 1 75 100 125 150 175 200 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Single Pulse Avalanche Energy - mJ ID - Drain Current - A 1000 d ite im V) ) L 10 n o S( = ID(DC) RDVGS ( 50 TC - Case Temperature - °C TC - Case Temperature - °C 10 800 700 600 562 mJ 500 IAS = 75 A 88 A 400 300 232 mJ 200 100 0 25 100 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C VDS - Drain to Source Voltage - V Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 100 Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 0.52°C/W 0.1 0.01 10 μ Single pulse TC = 25°C 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 4 Data Sheet D13933EJ7V0DS 10 100 1000 NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 10 ID - Drain Current - A ID - Drain Current - A 500 TA = −25°C 25°C 75°C 150°C 175°C 1 0.1 400 VGS = 10 V 5.0 V 300 4.5 V 200 100 1 2 3 VDS = 10 V 5 6 4 Pulsed 0 1.0 2.0 3.0 4.0 VDS - Drain to Source Voltage - V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 100 VDS = 10 V Pulsed 10 TA = 175°C 75°C 25°C −50°C 1 0.1 0.01 0.01 0.1 10 1 100 Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 15 10 5.0 V VGS = 4.5 V 5 10 V 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 0 VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 0.01 5 0 ID = 44 A 0 5 15 10 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = VGS ID = 250 μA 2.5 2.0 1.5 1.0 0.5 0 −50 0 50 100 150 Tch - Channel Temperature - °C ID - Drain Current - A Data Sheet D13933EJ7V0DS 5 8 7 6 VGS = 10 V 5 4 3 2 1 1000 VGS = 10 V 100 0V 10 1 50 0 100 0.1 0 150 Tch - Channel Temperature - °C 1000 Ciss Coss 1000 Crss 1 10 100 tf td(off) 100 td(on) tr 10 VDD = 28 V VGS = 10 V RG = 1 Ω 1 0.1 VDS - Drain to Source Voltage - V 10 1.0 10 100 10 VGS 80 8 60 6 VDD = 44 V 4 40 20 100 IF - Diode Forward Current - A 6 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/μs VGS = 0 V 100 1 0.1 10 1 ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1.5 Figure15. SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 1.0 0.5 VF(S-D) - Source to Drain Voltage - V 2 VDS 0 20 40 60 80 ID = 88 A 0 100 120 140 160 QG - Gate Charge - nC Data Sheet D13933EJ7V0DS VGS - Gate to Source Voltage - V −50 100 0.1 Pulsed ID = 44 A 0 Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 VGS = 0 V f = 1 MHz Ciss, Coss, Crss - Capacitance - pF Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 9 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE PACKAGE DRAWINGS (Unit: mm) Note 1.3 ± 0.2 10.0 ± 0.3 No plating 7.88 MIN. 4 2 3 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 9.15 ± 0.3 8.0 TYP. 8.5 ± 0.2 1 5.7 ± 0.4 1.0 ± 0.5 4 4.45 ± 0.2 0.025 to 0.25 P. .5R 0 TY R 0.8 2.54 TYP. P. TY 0.5 ± 0.2 0.75 ± 0.2 0.5 ± 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 1.Gate 2.Drain 2.5 3.Source 15.5 MAX. 5.9 MIN. 4 1 0.75 ± 0.1 2.54 TYP. 1.3 ± 0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5 ± 0.2 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 2 3 1.0 ± 0.5 10 TYP. Note 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.3 ± 0.2 4.Fin (Drain) 12.7 MIN. 4.8 MAX. φ 3.6 ± 0.2 10.0 TYP. 1.3 ± 0.2 3 4)TO-262 (MP-25 Fin Cut) 4 8ο 0.25 Note 10.6 MAX. 0.2 0 to 2.54 3)TO-220 (MP-25) 1.3 ± 0.2 2.54 ± 0.25 4.8 MAX. 10 TYP. 1.35 ± 0.3 2)TO-263 (MP-25ZK) 15.25 ± 0.5 1)TO-263 (MP-25ZJ) 3.0 ± 0.3 <R> 0.5 ± 0.2 2.8 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note Not for new design Data Sheet D13933EJ7V0DS 7 NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE 1 2 3 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.3 ± 0.2 1.27 ± 0.2 3.1 ± 0.3 15.9 MAX. 1.27 ± 0.2 4 4.45 ± 0.2 10.1 ± 0.3 3 10.0 ± 0.2 13.7 ± 0.3 13.7 ± 0.3 1 2 4.45 ± 0.2 1.3 ± 0.2 3.1 ± 0.2 4 φ 3.8 ± 0.2 6.3 ± 0.3 2.8 ± 0.3 10.0 ± 0.2 1.2 ± 0.3 6)TO-262 (MP-25SK) 8.9 ± 0.2 5)TO-220 (MP-25K) 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D13933EJ7V0DS NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE <R> TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side <R> Reel side MARKING INFORMATION NEC 88N055 LE <R> Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below MP-25ZJ, MP-25ZK Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Recommended Condition Symbol IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260°C or below MP-25, MP-25K, MP-25SK, Time: 10 seconds or less MP-25 Fin Cut Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below MP-25ZJ, MP-25ZK, Time (per side of the device): 3 seconds or less MP-25K, MP-25SK Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 300°C or below MP-25, MP-25 Fin Cut Time (per side of the device): 3 seconds or less THDWS P350 P300 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D13933EJ7V0DS 9 NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE • The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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