IRLR/U3410
I-P A K
T O -25 1 A A
D -P A K
T O -2 52 A A
l
l
l
l
l
l
l
Logic Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3410)
Straight Lead (IRLU3410)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
Description
VDSS = 100V
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
RDS(on) = 0.105Ω
G
ID = 17A
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
17
12
60
79
0.53
± 16
150
9.0
7.9
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
2014-8-15
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
1
Typ.
Max.
Units
–––
–––
–––
1.9
50
110
°C/W
www.kersemi.com
IRLR/U3410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
–––
–––
1.0
7.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.122
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.2
53
30
26
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
800
160
90
V(BR)DSS
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.105
VGS = 10V, ID = 10A
0.125 W
VGS = 5.0V, ID = 10A
0.155
VGS = 4.0V, ID = 9.0A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 9.0A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
34
ID = 9.0A
4.8
nC VDS = 80V
20
VGS = 5.0V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 9.0A
ns
–––
RG = 6.0Ω, VGS = 5.0V
–––
RD = 5.5Ω, See Fig. 10
Between lead,
–––
nH
6mm (0.25in.)
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
17
––– –––
showing the
A
G
integral reverse
––– –––
60
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 9.0A, VGS = 0V
––– 140 210
ns
TJ = 25°C, IF =9.0A
––– 740 1100 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = 9.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%
Uses IRL530N data and test conditions
ISD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS, This is applied for I-PAK, LS of D-PAK is measured between lead and
TJ ≤ 175°C
2014-8-15
center of die contact
2
www.kersemi.com
IRLR/U3410
100
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , D rain-to-S ource C urrent (A )
ID , D rain-to-S ource C urrent (A )
TOP
10
1
2.5V
20µ s P U LS E W ID TH
T J = 25°C
0.1
0.1
1
10
10
2.5V
1
20µ s P U LS E W ID TH
T J = 175°C
0.1
A
0.1
100
3.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
100
I D , D ra in -to-S o urc e C urren t (A )
T J = 2 5 °C
T J = 1 7 5 °C
10
1
V DS = 5 0V
2 0 µ s P U L S E W ID T H
3
4
5
6
7
8
9
10
I D = 15A
2.5
2.0
1.5
1.0
0.5
V G S = 10V
0.0
A
-60 -40 -20
0
20
40
60
80
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
A
100 120 140 160 180
T J , Junction T em perature (°C )
V G S , G a te -to -S o u rc e V o lta g e (V )
2014-8-15
A
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2
10
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
0.1
1
www.kersemi.com
IRLR/U3410
V GS
C iss
C rss
C oss
C , C apacitanc e (pF )
1200
=
=
=
=
15
0V ,
f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
1400
C is s
1000
800
600
C os s
400
C rs s
200
0
10
V D S = 8 0V
V D S = 5 0V
V D S = 2 0V
12
9
6
3
FO R TE S T C IR C U IT
S E E FIG U R E 13
0
A
1
I D = 9.0A
100
0
V D S , D rain-to-S ource V oltage (V )
20
30
40
A
50
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
I S D , R everse D rain C urrent (A )
10
T J = 175°C
10
T J = 25°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
A
10µ s
10
10 0µ s
1m s
T C = 25°C
T J = 175°C
S ingle P ulse
1
1
1.4
10m s
10
100
A
1000
V D S , D rain-to-S ource V oltage (V )
V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-15
100
Fig 8. Maximum Safe Operating Area
4
www.kersemi.com
IRLR/U3410
20
RD
VDS
VGS
I D , Drain Current (A)
15
D.U.T.
RG
+
-VDD
5.0V
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-15
5
www.kersemi.com
IRLR/U3410
E A S , S ingle P ulse A valanc he E nergy (m J)
350
15V
L
VDS
D .U .T
RG
IA S
10V
tp
D R IV E R
+
V
- DD
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
TO P
300
B O TTO M
ID
3.7A
6.4A
9.0A
250
200
150
100
50
0
V D D = 25V
25
50
A
75
100
125
150
175
S tarting T J , Junc tion T em perature (°C )
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
QG
.2µF
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
2014-8-15
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
www.kersemi.com
IRLR/U3410
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
D=
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
2014-8-15
7
www.kersemi.com
IRLR/U3410
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
1
2
10.42 (.410)
9.40 (.370)
LE A D A S S IG N M E N T S
1 - GATE
3
0.51 (.020)
M IN.
-B1.52 (.060)
1.15 (.045)
3X
2X
1.14 (.045)
0.76 (.030)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2 - D R A IN
3 - SOURCE
4 - D R A IN
0.58 (.023)
0.46 (.018)
M A M B
N O TE S :
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
2.28 (.090)
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A .
4.57 (.180)
4 D IM E N S IO N S S H O W N A RE B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.006).
Part Marking Information
TO-252AA (D-PARK)
E XA M P L E : TH IS IS A N IR F R 1 20
W IT H A S S E M B LY
LOT CODE 9U1P
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A
IR F R
1 20
9U
A S S E M B LY
LOT CODE
2014-8-15
8
F IR S T P O R TIO N
OF PART NUMBER
1P
S E C O N D P O R TIO N
OF PART NUMBER
www.kersemi.com
IRLR/U3410
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
-A-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
LE A D A S S IG N M E N T S
4
1 - GATE
2 - D R A IN
6.45 (.245)
5.68 (.224)
3 - SOURCE
4 - D R A IN
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
-B-
N O TE S :
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
2.28 (.090)
1.91 (.075)
2 C O N T R O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO J E D E C O U T LIN E T O -252A A .
9.65 (.380)
8.89 (.350)
4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.006).
3X
1.14 (.045)
0.76 (.030)
2.28 (.090)
3X
1.14 (.045)
0.89 (.035)
0.89 (.035)
0.64 (.025)
0.25 (.010)
M A M B
0.58 (.023)
0.46 (.018)
2X
Part Marking Information
TO-251AA (I-PARK)
E X A M P L E : T H IS IS A N IR F U 1 2 0
W IT H A S S E M B L Y
LO T C OD E 9U 1P
IN T E R N A T IO N A L
R E C TIF IE R
LO GO
IR F U
120
9U
ASSEMBLY
LOT CODE
2014-8-15
9
F IR S T P O R T IO N
OF PART NUMBER
1P
S E C O N D P O R T IO N
OF PART NUMBER
www.kersemi.com
IRLR/U3410
Tape & Reel Information
TO-252AA
TR
TRR
1 6.3 ( .6 41 )
1 5.7 ( .6 19 )
12 .1 ( .4 7 6 )
11 .9 ( .4 6 9 )
TRL
16 .3 ( .64 1 )
15 .7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
F E E D D IR E C T IO N
NOTES :
1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R .
2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
1 3 IN C H
16 m m
NO TES :
1. O U T L IN E C O N F O R M S T O E IA -4 81 .
2014-8-15
10
www.kersemi.com