Ordering number : EN8211A MCH3145/MCH3245 Bipolar Transistor http://onsemi.com (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single MCPH3 Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity Adoption of MBIT processes • High-speed switching Low collector-to-emitter saturation voltage Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation Specifications ( ) : MCH3145 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Ratings Unit (--50)80 V (--50)80 V VCEO (--)50 V VEBO IC (--)6 V (--)2 A Collector Dissipation ICP IB PC Junction Temperature Tj Storage Temperature Tstg Base Current Conditions VCBO VCES (--)4 (--)400 When mounted on ceramic substrate (600mm2×0.8mm) A mA 0.8 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7019A-004 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 0.25 MCH3145-TL-E MCH3245-TL-E 0.15 2.0 Packing Type : TL Marking 1.6 2.1 0.25 0.65 2 TL MCH3145 CS LOT No. 1 AN LOT No. 0 to 0.02 LOT No. LOT No. 3 MCH3245 0.3 0.07 0.85 Electrical Connection 3 1 : Base 2 : Emitter 3 : Collector 1 MCPH3 1 2 MCH3145 Semiconductor Components Industries, LLC, 2013 September, 2013 3 2 MCH3245 80812 TKIM/12805EA TSIM TB-00001031 No.8211-1/8 MCH3145 / MCH3245 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage Storage Time Unit max (--)1 μA (--)1 μA 560 420 MHz (16)8 pF (--165)130 (--330)260 (--)0.9 (--)1.2 mV V (--50)80 V (--50)80 V (--)50 V (--)6 V (35)35 tstg tf Fall Time typ 200 IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A V(BR)EBO ton Turn-On Time min IC=(--)1A, IB=(--)50mA IC=(--)10μA, IE=0A IC=(--)100μA, RBE=0A V(BR)CBO V(BR)CES Collector-to-Emitter Breakdown Voltage Ratings Conditions See specified Test Circuit. ns (200)330 ns (24)40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 50Ω + 470μF + 100μF VBE= --5V VCC=25V IC=10IB1= --10IB2=0.7A For PNP, the polarity is reversed. Ordering Information Package Shipping MCH3145-TL-E MCPH3 3,000pcs./reel MCH3245-TL-E MCPH3 3,000pcs./reel IC -- VCE Collector Current, IC -- A mA --80m A 00 --1.8 --1 --60 mA Pb Free IC -- VCE 2.0 --40 mA 1.8 --20m --1.6 A MCH3145 --1.4 A --1.2 --10mA --8mA --1.0 --6mA --0.8 --4mA --0.6 --2mA Collector Current, IC -- A --2.0 memo 50m Device 40 m A 30mA MCH3245 20mA 1.6 15mA 1.4 10mA 8mA 6mA 1.2 1.0 4mA 0.8 0.6 2mA 0.4 --0.4 0.2 --0.2 IB=0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V --1.8 --2.0 IT09096 IB=0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 2.0 IT09097 No.8211-2/8 MCH3145 / MCH3245 IC -- VBE --2.00 25°C --25°C --1.25 --1.00 --0.75 --0.50 1.00 0.75 0.50 0 0 --0.2 --0.4 --0.6 --0.8 0 --1.0 Base-to-Emitter Voltage, VBE -- V MCH3145 VCE= --2V Ta=75°C 2 --25°C 7 5 1.0 IT09099 hFE -- IC MCH3245 VCE=2V 25°C 3 --25°C 2 100 7 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 5 0.01 3 MCH3145 VCE= --10V Gain-Bandwidth Product, f T -- MHz 2 100 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 7 0.1 2 3 5 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 2 3 IT09103 Cob -- VCB MCH3245 f=1MHz Output Capacitance, Cob -- pF 10 7 1.0 Collector Current, IC -- A 5 2 3 MCH3245 VCE=10V IT09102 3 2 IT09101 f T -- IC MCH3145 f=1MHz 5 7 1.0 3 10 0.01 3 Cob -- VCB 7 5 Collector Current, IC -- A 5 3 3 3 7 5 2 2 IT09100 f T -- IC 7 7 --0.01 0.8 Ta=75°C 100 2 --0.01 0.6 5 DC Current Gain, hFE 25°C 0.4 Base-to-Emitter Voltage, VBE -- V 7 5 3 0.2 IT09098 hFE -- IC 7 DC Current Gain, hFE 1.25 0.25 0 Gain-Bandwidth Product, f T -- MHz 1.50 Ta=7 5°C 25°C --25°C Collector Current, IC -- A --1.50 --0.25 Output Capacitance, Cob -- pF MCH3245 VCE=2V 1.75 Ta=7 5°C Collector Current, IC -- A --1.75 IC -- VBE 2.00 MCH3145 VCE= --2V 3 2 10 7 5 7 3 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 IT09104 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 IT09105 No.8211-3/8 MCH3145 / MCH3245 VCE(sat) -- IC 3 MCH3145 IC / IB=10 3 2 --0.1 7 5 Ta C 5° =7 5 --2 3 °C °C 25 2 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 MCH3245 IC / IB=10 2 0.1 7 5 °C 75 5°C --2 5°C 3 = Ta 2 2 0.01 7 5 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 3 2 --0.1 C 75° Ta= 5°C --2 C 25° 3 2 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 3 5 3 2 3 IT09107 VCE(sat) -- IC 5 MCH3145 IC / IB=20 7 2 IT09106 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 0.01 3 VCE(sat) -- IC --1.0 7 2 MCH3245 IC / IB=20 2 0.1 7 °C 75 C 5° --2 5°C 5 = Ta 3 2 2 0.01 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 75°C 25°C 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 --1.0 Ta= --25°C 7 75°C 25°C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 IT09112 3 5 7 1.0 2 3 IT09109 2 1.0 Ta= --25°C 7 75°C 25°C 5 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 IT09111 VBE(sat) -- IC 3 2 2 VBE(sat) -- IC IT09110 MCH3145 IC / IB=20 7 0.1 MCH3245 IC / IB=10 3 0.01 3 VBE(sat) -- IC 3 5 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Ta= --25°C 7 3 3 2 --1.0 2 IT09108 MCH3145 IC / IB=10 3 --0.01 7 0.01 3 VBE(sat) -- IC 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 MCH3245 IC / IB=20 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT09113 No.8211-4/8 MCH3145 / MCH3245 Collector Current, IC -- A 2 2 μs 100 3 3 s 0μ s m s 10 n 0m tio 10 pera o DC 1.0 7 5 0.1 7 5 50 s 2 IC=2A MCH3145 / MCH3245 Ta=25°C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 2 3 PC -- Ta 0.9 <10μs 1m 3 ASO ICP=4A MCH3145 / MCH3245 0.8 Collector Dissipation, PC -- W 7 5 M ou nt 0.7 0.6 ed on ac er am ic 0.5 bo ar 0.4 d (6 00 m 0.3 0.2 m2 ✕ 0. 8m m ) 0.1 0 5 7 IT09114 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09115 No.8211-5/8 MCH3145 / MCH3245 Taping Specification MCH3145-TL-E, MCH3245-TL-E No.8211-6/8 MCH3145 / MCH3245 Outline Drawing MCH3145-TL-E, MCH3245-TL-E Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.8211-7/8 MCH3145 / MCH3245 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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