NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS RDS(ON) MAX 2.0 mW @ 10 V 30 V • CPU Power Delivery, DC−DC Converters Drain−to−Source Voltage Gate−to−Source Voltage TA = 25°C Continuous Drain Current RqJA (Note 1) D (5,6) Symbol Value Unit VDSS 30 V VGS ±20 V ID 29.1 A TA = 100°C TA = 25°C PD 2.72 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 47.5 A Continuous Drain Current RqJA (Note 2) TA = 100°C Steady State TA = 25°C PD 7.23 W TA = 25°C ID 17.1 A 10.8 TA = 25°C PD 0.93 Continuous Drain Current RqJC (Note 1) TC = 25°C ID 147 Pulsed Drain Current N−CHANNEL MOSFET MARKING DIAGRAM D Power Dissipation RqJA (Note 2) TC =100°C TC = 25°C S (1,2,3) 30.0 TA = 100°C Power Dissipation RqJC (Note 1) G (4) 18.4 Power Dissipation RqJA (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) 147 A 3.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter ID MAX W A 93 PD 69.44 W A 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4934N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability IDM 442 TA = 25°C IDmax 100 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C IS 68 A Device Package Shipping† NTMFS4934NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4934NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel TA = 25°C, tp = 10 ms Current Limited by Package Source Current (Body Diode) Drain to Source DV/DT dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 37 Apk, L = 0.3 mH, RG = 25 W EAS 205 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 4 1 ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4934N/D NTMFS4934N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 1.8 Junction−to−Ambient – Steady State (Note 3) RqJA 46.0 Junction−to−Ambient – Steady State (Note 4) RqJA 134.2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 17.3 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 15.2 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.6 4.6 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 1.52 ID = 15 A 1.52 ID = 30 A 2.2 ID = 15 A 2.2 VDS = 1.5 V, ID = 15 A 80 mV/°C 2.0 3.0 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 5505 VGS = 0 V, f = 1 MHz, VDS = 15 V 2355 CRSS 90 Total Gate Charge QG(TOT) 34 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge VGS = 4.5 V, VDS = 15 V; ID = 30 A 3.8 13.9 pF nC 8.1 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 76.5 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 20.0 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 36.2 39.3 9.4 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4934N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 13.2 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 33.3 ns 49.7 7.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.79 TJ = 125°C 0.66 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.0 V 59.1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 28.3 ns 30.8 QRR 70 nC Source Inductance LS 1.00 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG 0.80 W PACKAGE PARASITIC VALUES TA = 25°C 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4934N TYPICAL CHARACTERISTICS 3.6 V to 10 V ID, DRAIN CURRENT (A) 160 200 TJ = 25°C VGS = 3.4 V 180 3.2 V 160 140 ID, DRAIN CURRENT (A) 180 120 3.0 V 100 80 2.8 V 60 40 2.6 V 20 0 0 1 2 3 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 140 120 100 TJ = 125°C 80 60 TJ = 25°C 40 20 2.4 V 2.2 V VDS = 10 V 0 5 TJ = −55°C 1 1.5 2 2.5 3 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.0028 0.0026 ID = 30 A TJ = 25°C 0.0026 0.0024 TJ = 25°C 0.0024 0.0022 VGS = 4.5 V 0.0020 0.0022 0.0018 0.0020 0.0016 0.0018 VGS = 10 V 0.0014 0.0016 0.0014 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.0012 10 20 1.5 60 80 100 120 140 160 180 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 1.7 1.6 40 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage VGS = 0 V ID = 30 A VGS = 10 V 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 TJ = 150°C 10000 1.3 1.2 1.1 1 0.9 TJ = 125°C 1000 TJ = 85°C 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 100 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4934N TYPICAL CHARACTERISTICS 11 C, CAPACITANCE (pF) 6000 TJ = 25°C VGS = 0 V Ciss 5000 4000 3000 Coss 2000 1000 Crss 0 0 5 10 15 20 25 30 VGS, GATE−TO−SOURCE VOLTAGE (V) 7000 10 QT 9 8 7 6 5 QGS 3 VDD = 15 V VGS = 10 V ID = 30 A 2 1 0 0 10 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 60 70 80 VGS = 0 V 100 ID, DRAIN CURRENT (A) t, TIME (ns) 50 30 VDD = 15 V ID = 15 A VGS = 10 V tr td(off) td(on) 10 tf 1 10 100 25 20 15 0 0.4 10 ms 100 ms 1 ms 10 10 ms 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.6 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current dc 10 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 0 V < VGS < 10 V SINGLE PULSE TC = 25°C 0.1 0.5 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1000 0.01 0.01 TJ = 25°C 5 RG, GATE RESISTANCE (W) 0.1 TJ = 125°C 10 Figure 9. Resistive Switching Time Variation vs. Gate Resistance ID, DRAIN CURRENT (A) 40 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 1000 100 30 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1 TJ = 25°C QGD 4 100 200 ID = 37 A 180 160 140 120 100 80 60 40 20 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4934N TYPICAL CHARACTERISTICS 100 D = 0.5 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 13. Thermal Response GFS (S) r(t) (°C/W) 10 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 ID (A) Figure 14. GFS vs. ID http://onsemi.com 6 80 90 100 100 1000 NTMFS4934N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE G 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 0.10 C SIDE VIEW SOLDERING FOOTPRINT* DETAIL A 3X 8X 0.10 C A B 0.05 c 4X e/2 1 4 0.965 K G 0.750 1.000 L PIN 5 (EXPOSED PAD) 4X 1.270 b MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 1.330 2X 0.905 2X E2 L1 M 0.495 4.530 3.200 0.475 D2 2X BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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