Transient Voltage Suppressors for ESD Protection ESDXXV88D-C Description DFN-1006 The ESDXXV88D-C is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). Feature Functional Diagram u 100 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects one birectional I/O line u Low clamping voltage u Working voltages :3.3V, 5V u Low leakage current u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) 2 1 Applications u Cell Phone Handsets and Accessories u Microprocessor based equipment u Personal Digital Assistants (PDA’s) u Notebooks, Desktops, and Servers u Portable Instrumentation u Peripherals u Pagers Mechanical Data u DFN1006 (1.0x0.6x0.5mm) Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 0.5 Milligrams (Approximate) u Quantity Per Reel : 5,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units PPP Peak Pulse Power (tp=8/20μs waveform) 100 W IPP Peak Pulse Current (tp=8/20μs waveform) 2.5 A TJ Operating Junction Temperature Range -55 to +125 ºC Storage Temperature Range -55 to +150 ºC 260 ºC TSTG TL Soldering Temperature, t max = 10s IEC61000-4-2 (ESD) Air Discharge 15 Contact Discharge 8 KV UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESDXXV88D-C Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @5A (Max.) (Max.) ESD3.3V88D-C T 3.3 3.5 1 5.5 ESD05V88D-C M 5 6 1 12.5 Part Number (@A) IR (μA) (Max.) C (pF) (Typ.) 15 7 1 6 20 2 1 10 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) 100% tr 100 Percent of Peak Pulse Current % IPP - Peak Pulse Current - % of IPP 120 Peak Value IPP 80 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) Fig3. 90% Power Derating Curve 100 90 % of Rated Power 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 200 Ambient Temperature – TA (ºC) UN Semiconductor Co., Ltd. Revision December 18, 2013 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESDXXV88D-C Characteristic Curves Fig4. Fig5. ESD Clamping (+8KV Contac per IEC61000-4-2) ESD Clamping (-8KV Contac per IEC61000-4-2) DFN1006 Package Outline & Dimensions Symbol Revision December 18, 2013 Min. Max. A 0.450 0.550 0.018 0.022 0.010 0.070 0.000 0.003 D 0.950 1.050 0.037 0.041 E 0.550 0.650 0.022 0.026 E1 UN Semiconductor Co., Ltd. Inches Max. A1 D1 Soldering Footprint Millimeters Min. 0.450 REF 0.400 REF 0.018 REF 0.016 REF b 0.275 0.325 0.011 0.013 e 0.675 0.725 0.027 0.029 L 0.275 0.325 0.011 0.013 L1 0.010 REF 0.000 REF Symbol Inches Millimeters K 0.055±0.002 1.4±0.05 P 0.035±0.001 0.9±0.025 X 0.014±0.001 0.354±0.025 Y 0.011±0.001 0.283±0.025 X1 0.020±0.001 0.5±0.025 Y1 0.016±0.001 0.4±0.025 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.