UN ESD05V88D-C Transient voltage suppressors for esd protection Datasheet

Transient Voltage Suppressors for ESD Protection
ESDXXV88D-C
Description
DFN-1006
The ESDXXV88D-C is ultra low capacitance TVS arrays
designed to protect high speed data interfaces. This series has
been specifically designed to protect sensitive components
which are connected to high-speed data and transmission lines
from over-voltage caused by ESD (electrostatic discharge),
CDE (Cable Discharge Events), and EFT (electrical fast
transients).
Feature
Functional Diagram
u
100 Watts Peak Pulse Power per Line (tp=8/20μs)
u
Protects one birectional I/O line
u
Low clamping voltage
u
Working voltages :3.3V, 5V
u
Low leakage current
u
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
u
IEC61000-4-4 (EFT) 40A (5/50ηs)
2
1
Applications
u
Cell Phone Handsets and Accessories
u
Microprocessor based equipment
u
Personal Digital Assistants (PDA’s)
u
Notebooks, Desktops, and Servers
u
Portable Instrumentation
u
Peripherals
u
Pagers
Mechanical Data
u
DFN1006 (1.0x0.6x0.5mm) Package
u
Molding Compound Flammability Rating : UL 94V-0
u
Weight 0.5 Milligrams (Approximate)
u
Quantity Per Reel : 5,000pcs
u
Reel Size : 7 inch
u
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
Parameter
Value
Units
PPP
Peak Pulse Power (tp=8/20μs waveform)
100
W
IPP
Peak Pulse Current (tp=8/20μs waveform)
2.5
A
TJ
Operating Junction Temperature Range
-55 to +125
ºC
Storage Temperature Range
-55 to +150
ºC
260
ºC
TSTG
TL
Soldering Temperature, t max = 10s
IEC61000-4-2 (ESD)
Air Discharge
15
Contact Discharge
8
KV
UN Semiconductor Co., Ltd.
Revision December 18, 2013
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@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
ESDXXV88D-C
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Device
Marking
VRWM
(V)
(Max.)
VB
(V)
(Min.)
IT
(mA)
VC
@5A
(Max.)
(Max.)
ESD3.3V88D-C
T
3.3
3.5
1
5.5
ESD05V88D-C
M
5
6
1
12.5
Part Number
(@A)
IR
(μA)
(Max.)
C
(pF)
(Typ.)
15
7
1
6
20
2
1
10
VC
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
100%
tr
100
Percent of Peak Pulse Current %
IPP - Peak Pulse Current - % of IPP
120
Peak Value IPP
80
60
40
td=t IPP/2
20
0
0
5
10
15
20
25
10%
tr = 0.7~1ns
Time (ns)
30ns
30
60ns
t - Time (μs)
Fig3.
90%
Power Derating Curve
100
90
% of Rated Power
80
70
60
50
40
30
20
10
0
0
20
40 60 80 100 120 140 160 180 200
Ambient Temperature – TA (ºC)
UN Semiconductor Co., Ltd.
Revision December 18, 2013
www.unsemi.com.tw
2/3
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
ESDXXV88D-C
Characteristic Curves
Fig4.
Fig5.
ESD Clamping (+8KV Contac per IEC61000-4-2)
ESD Clamping (-8KV Contac per IEC61000-4-2)
DFN1006 Package Outline & Dimensions
Symbol
Revision December 18, 2013
Min.
Max.
A
0.450
0.550
0.018
0.022
0.010
0.070
0.000
0.003
D
0.950
1.050
0.037
0.041
E
0.550
0.650
0.022
0.026
E1
UN Semiconductor Co., Ltd.
Inches
Max.
A1
D1
Soldering Footprint
Millimeters
Min.
0.450 REF
0.400 REF
0.018 REF
0.016 REF
b
0.275
0.325
0.011
0.013
e
0.675
0.725
0.027
0.029
L
0.275
0.325
0.011
0.013
L1
0.010 REF
0.000 REF
Symbol
Inches
Millimeters
K
0.055±0.002
1.4±0.05
P
0.035±0.001
0.9±0.025
X
0.014±0.001
0.354±0.025
Y
0.011±0.001
0.283±0.025
X1
0.020±0.001
0.5±0.025
Y1
0.016±0.001
0.4±0.025
www.unsemi.com.tw
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@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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