BCD MBR30H100C High voltage power schottky rectifier Datasheet

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Main Product Characteristics
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage operation, and particularly, in high frequency circuits where
low switching losses and low noise are required.
IF(AV)
2*15A
VRRM
100V
TJ
175oC
VF(max)
0.67V
MBR30H100C is available in TO-220-3, TO-220-3(2)
and TO-220F-3 packages
Mechanical Characteristics
Features
·
·
·
·
·
·
·
·
·
Low Forward Voltage: 0.67V @125oC
High Surge Capacity
175oC Operating Junction Temperature
30 A Total (15A Each Diode Leg)
Guard-Ring for Stress Protection
Pb-Free Package
·
·
·
Applications
·
·
·
Case: Epoxy, Molded
Epoxy Meets UL 94 V-0 @ 0.125 in
Weight (Approximately):
2 Grams (TO-220-3, TO-220-3(2) and
TO-220F-3)
Finish: All External Surfaces Corrosion Resistant
and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260oC Maximumfor 10 Seconds
Power Supply Output Rectification
Power Management
Instrumentation
TO-220F-3
TO-220-3
TO-220-3(2)
Figure 1. Package Type of MBR30H100C
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Pin Configuration
T Package
(TO-220-3(2))
(TO-220-3)
3
A2
3
A2
2
K
2
K
1
A1
1
A1
TF Package
(TO-220F-3)
3
A2
2
K
1
A1
Figure 2. Pin Configuration of MBR30H100C(front view)
A1
K
A2
Figure 3. Internal Structure of MBR30H100C
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Ordering Information
MBR30H100C
Package
Circuit Type
E1: Lead Free
G1: Green
Package
T: TO-220-3/TO-220-3(2)
TF: TO220F-3
Blank: Tube
Part Number
Lead Free
TO-220-3/ MBR30H100CTTO-220-3(2) E1
TO-220F-3
-
Marking ID
Green
MBR30H100CT-G1
Lead Free
MBR30H100CTE1
Green
MBR30H100CTG1
MBR30H100CTF- MBR30H100CTF-G1 MBR30H100CTF- MBR30H100CTFE1
E1
G1
Packing Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC=162oC
IF(AV)
15
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC=150oC
IFRM
30
A
Non Repetitive Peak Surge Current (Surge applied at rated
load conditions half wave, single phase, 60 Hz)
IFSM
250
A
TJ
175
oC
Storage Temperature Range
TSTG
-65 to 175
oC
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/µs
ESD (Machine Model=C)
>400
V
ESD (Human Body Model=3B)
>8000
V
Operating Junction Temperature (Note 2)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA.
Thermal Characteristics
Parameter
Symbol
RθJC
Condition
Junction to Case
Maximum Thermal Resistance
RθJA
Junction to Ambient
Apr. 2009 Rev. 1. 2
Value
TO-220-3/
TO-220-3(2)
2.0
TO-220F-3
2.5
TO-220-3/
TO-220-3(2)
60
Unit
o
C/W
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Electrical Characteristics (Each Diode Leg)
Parameter
Condition
Symbol
Unit
0.80
IF=15 A, TC=25oC
Maximum Instantaneous Forward IF=15 A, TC=125oC
Voltage Drop (Note 3)
IF=30 A, TC=25oC
VF
0.67
0.93
V
0.80
IF=30 A, TC=125oC
Maximum Instantaneous Reverse
Current (Note 3)
Value
Rated DC Voltage, TC=125oC
Rated DC Voltage, TC=25oC
6.0
IR
mA
0.0045
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Typical Performance Characteristics
IF, Instantaneous Forward Current (A)
100
10
1
o
25 C
o
125 C
o
150 C
o
175 C
0.1
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage
0.01
IR, Reverse Current (A)
1E-3
1E-4
o
25 C
o
125 C
o
150 C
o
175 C
1E-5
1E-6
1E-7
1E-8
1E-9
20
40
60
80
100
VR, Reverse Voltage (V)
Figure 5. Typical Reverse Current
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Typical Performance Characteristics (Continued)
10000
o
Capacitance (pF)
TJ=25 C
1000
100
10
20
40
60
80
100
VR, Reverse Voltage (V)
Figure 6. Capacitance
20
IAV, Average Foward Current (A)
18
16
14
12
10
8
Square
6
4
2
0
100
110
120
130
140
150
160
170
180
o
Case Temperature ( C)
Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode)
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Mechanical Dimensions
TO-220-3
2.580(0.102)
3.380(0.133)
0.550(0.022)
1.350(0.053)
1.160(0.046)
1.760(0.069)
14.230(0.560)
16.510(0.650)
φ1.500(0.059)
27.880(1.098)
30.280(1.192)
8.520(0.335)
9.520(0.375)
1.850(0.073)
9.660(0.380)
10.660(0.420)
φ3.560(0.140)
4.060(0.160)
Unit: mm(inch)
3°
0.200(0.008)
7°
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
7°
0.381(0.015)
60°
0.813(0.032)
8.763(0.345)
60°
0.381(0.015)
2.540(0.100)
2.540(0.100)
Apr. 2009 Rev. 1. 2
0.356(0.014)
0.406(0.016)
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Mechanical Dimensions (Continued)
TO-220-3(2)
Unit: mm(inch)
9.800(0.386)
10.200(0.402)
∅ 3.560(0.140)
3.640(0.143)
0.600(0.024)
1.300(0.051)
1.300(0.051)
11.100(0.437)
6.300(0.248)
6.700(0.264)
1.700(0.067)
9.000(0.354)
9.400(0.370)
3°
4.500(0.177)
2.400(0.094)
3°
3°
0.700(0.028)
0.900(0.035)
2.540(0.100)
12.600(0.496)
13.600(0.535)
9.600(0.378)
10.600(0.417)
1.270(0.050)
2.540(0.100)
Apr. 2009 Rev. 1. 2
0.400(0.016)
0.600(0.024)
BCD Semiconductor Manufacturing Limited
9
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
Mechanical Dimensions (Continued)
TO-220F-3
9.700(0.382)
10.300(0.406)
∅ٛ 3.000(0.119)
3.550(0.140)
3.000(0.119)
3.400(0.134)
6.900(0.272)
7.100(0.280)
Unit: mm(inch)
2.350(0.093)
2.900(0.114)
3.370(0.133)
3.900(0.154)
14.700(0.579)
16.000(0.630)
4.300(0.169)
4.900(0.075)
2.790(0.110)
4.500(0.177)
1.000(0.039)
1.400(0.055)
1.100(0.043)
1.500(0.059)
12.500(0.492)
13.500(0.531)
0.550(0.022)
0.900(0.035)
2.540(0.100)
2.540(0.100)
Apr. 2009 Rev. 1. 2
0.450(0.018)
0.600(0.024)
BCD Semiconductor Manufacturing Limited
10
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