DC COMPONENTS CO., LTD. DMBT2369 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high speed switching applications. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCES 40 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 40 - - V Test Conditions IC=10µA, IE=0 Collector-Emitter Breakdown Voltage BVCES 40 - - V IC=10µA, IB=0 Collector-Emitter Breakdown Voltage BVCEO 15 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 4.5 - - V IE=10µA, IC=0 ICBO - - 400 nA VCB=20V, IE=0 VCE(sat) - - 250 mV IC=10mA, IB=1mA VBE(sat) 700 - 850 mV IC=10mA, IB=1mA hFE1 40 - 120 - IC=10mA, VCE=1V hFE2 20 - - - - - 4 pF Collector Cutoff Current Collector-Emitter Saturation Voltage(1) (1) Base-Emitter Saturation Voltage DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width Cob 380µs, Duty Cycle 2% IC=100mA, VCE=2V VCB=5V, f=1MHz, IE=0