Hitachi HRU0203A Silicon schottky barrier diode for rectifying Datasheet

HRU0203A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-469B (Z)
Rev 2
Oct. 1997
Features
• Low forward voltage drop and suitable for high effifiency rectifying.
• Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed
assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRU0203A
Y
URP
Outline
1
Y
Cathode mark
Mark
2
1. Cathode
2. Anode
HRU0203A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
*1
RRM
Repetitive peak reverse
voltage
V
Average rectified current
I o*1
*2
Value
Unit
30
V
200
mA
2
A
Non-Repetitive peak
forward surge current
IFSM
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55Å`+125
°C
Note
Note
1. See from Fig.3 to Fig.5
2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
0.50
V
I F = 200 mA
Reverse current
IR
—
—
50
µA
VR = 30V
Thermal resistance
Rth(j-a)
—
520
—
°C/W Polyimide board *1
Note
1.
Polyimide board
3.0
1.5
0.8
20hx15wx0.8t
Unit: mm
1.5
2
HRU0203A
Main Characteristic
10
2
10
Pulse test
Pulse test
1.0
10
10
Ta=75°C
-1
10
Reverse current I R (A)
Forward current I F (A)
10
10
Ta=25°C
-2
-3
10
-3
-4
10
-5
0
0.2
0.6
0.4
0.8
Ta=75°C
-5
Ta=25°C
10
-4
10
-2
-6
-7
10 0
1.0
10
30
20
40
50
Reverse voltage VR (V)
Forward voltage VF (V)
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
0.06
0.20
Forward power dissipation Pd (W)
0.16
t
T
t
D= \
T
Tj =25°C
D=1/6
Sin( ˘=180°)
D=1/3
0.12
D=1/2
DC
0.08
0.04
0
Reverse power dissipation Pd (W)
0V
0A
t
0.05
T
t
D= \
T
D=5/6
Tj =125°C
0.04
D=2/3
0.03
D=1/2
Sin( ˘=180°)
0.02
0.01
0
0
0.05 0.10
0.15 0.20 0.25
0.30
Forward current I F (A)
Fig.3 Forward power dissipation Vs. Forward current
0
10
20
30
40
Reverse voltage V R(V)
Fig.4 Reverse power dissipation Vs. Reverse voltage
3
HRU0203A
Main Characteristic
0.30
VR=VRRM/2
Tj =125°C
Rth(j-a)=520°C/W
Average forward current IO (A)
0.25
0.20
Sin
DC
( ˘=180°)
0.15
0.10
D=1/2
D=1/3
0.05
D=1/6
0
-25
0
25
50
75
100
125
Ambient temperature Ta (°C)
Fig.5 Average forward current Vs. Ambient temperature
4
HRU0203A
Package Dimensions
Unit : mm
Y
1.25±0.15
Cathode Mark
1.7±0.15
2.5±0.15
0.3±0.15
2
1
0.9±0.15
0 ‘0.10
1. Cathode
2. Anode
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
URP
—
—
0.004
5
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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