TI1 LMH6640 Lmh6640 tft-lcd single, 16v rail-to-rail high output operational amplifier Datasheet

LMH6640
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SNOSAA0B – FEB 2004 – REVISED MARCH 2013
LMH6640 TFT-LCD Single, 16V Rail-to-Rail High Output Operational Amplifier
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FEATURES
1
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DESCRIPTION
(VS = 16V, RL= 2 kΩ to V+/2, 25°C, Typical
Values Unless Specified)
Supply current (no load) 4 mA
Output resistance (closed loop 1 MHz) 0.35Ω
−3 dB BW (AV = 1) 190 MHz
Settling time (±0.1%, 2 VPP) 35 ns
Input common mode voltage −0.3V to 15.1V
Output voltage swing 100 mV from rails
Linear output current ±100 mA
Total harmonic distortion (2 VPP, 5 MHz) −64
dBc
Fully characterized for: 5V & 16V
No output phase reversal with CMVR exceeded
Differential gain (RL = 150Ω) 0.12%
Differential phase (RL = 150Ω) 0.12°
The LMH™6640 is a voltage feedback operational
amplifier with a rail-to-rail output drive capability of
100 mA. Employing TI’s patented VIP10 process, the
LMH6640 delivers a bandwidth of 190 MHz at a
current consumption of only 4mA. An input common
mode voltage range extending to 0.3V below the V−
and to within 0.9V of V+, makes the LMH6640 a true
single supply op-amp. The output voltage range
extends to within 100 mV of either supply rail
providing the user with a dynamic range that is
especially desirable in low voltage applications.
The LMH6640 offers a slew rate of 170 V/µs resulting
in a full power bandwidth of approximately 28 MHz
with 5V single supply (2 VPP, −1 dB). Careful
attention has been paid to ensure device stability
under all operating voltages and modes. The result is
a very well behaved frequency response
characteristic for any gain setting including +1, and
excellent specifications for driving video cables
including total harmonic distortion of −64 dBc @ 5
MHz, differential gain of 0.12% and differential phase
of 0.12°.
APPLICATIONS
•
•
•
•
•
•
TFT panel VCOM buffer amplifier
Active filters
CD/DVD ROM
ADC buffer amplifier
Portable video
Current sense buffer
RF2
300:
RF1
3 k:
10V - 16V
4
-
RS
5
1
10:
LMH6640
VCOM
POTENTIAL
3
+
2
TFT
PANEL
±160 mA
Figure 1. Typical Application as a TFT Panel VCOM Driver
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LMH is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2013, Texas Instruments Incorporated
LMH6640
SNOSAA0B – FEB 2004 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
ESD Tolerance
(1)
(2)
Human Body Model
2 KV
Machine Model
200V
VIN Differential
±2.5V
Input Current
±10 mA
Supply Voltages (V+ – V−)
18V
+
−
Voltage at Input/Output Pins
V +0.8V, V −0.8V
Storage Temperature Range
−65°C to +150°C
Junction Temperature
(3)
+150°C
Soldering Information
Infrared or Convection (20 sec.)
235°C
Wave Soldering (10 sec.)
260°C
(1)
(2)
(3)
Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specifications and the test conditions, see the
Electrical Characteristics.
Human body model, 1.5 kΩ in series with 100 pF. Machine Model, 0Ω in series with 200 pF.
The maximum power dissipation is a function of TJ(MAX), θJA , and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX)-TA ) / θJA. All numbers apply for packages soldered directly onto a PC board.
Operating Ratings
(1)
Supply Voltage (V+ – V−)
4.5V to 16V
Operating Temperature Range
Package Thermal Resistance
(2)
−40°C to +85°C
(2)
5-Pin SOT-23
(1)
(2)
2
265°C/W
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is
infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
The maximum power dissipation is a function of TJ(MAX), θJA , and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX)-TA ) / θJA. All numbers apply for packages soldered directly onto a PC board.
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5V Electrical Characteristics
Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (1)
Symbol
Parameter
−3 dB Bandwidth
BW
Min (2)
Conditions
Typ (3)
AV = +1 (RL = 100Ω)
150
AV = −1 (RL = 100Ω)
58
Max (2)
Units
MHz
BW0.1 dB
0.1 dB Gain Flatness
AV = −3
18
MHz
FPBW
Full Power Bandwidth
AV = +1, VOUT = 2 VPP, −1 dB
28
MHz
LSBW
-3 dB Bandwidth
AV = +1, VO = 2 VPP (RL = 100Ω)
32
MHz
GBW
Gain Bandwidth Product
AV = +1, (RL = 100Ω)
59
MHz
SR
Slew Rate
AV = −1
170
V/μs
en
Input Referred Voltage Noise
in
(4)
Input Referred Current Noise
f = 10 kHz
23
f = 1 MHz
15
f = 10 kHz
1.1
f = 1 MHz
0.7
THD
Total Harmonic Distortion
f = 5 MHz, VO = 2 VPP, AV = +2
RL = 1 kΩ to V+/2
–65
ts
Settling Time
VO = 2 VPP, ±0.1%, AV = −1
35
VOS
Input Offset Voltage
(5)
IB
Input Bias Current
IOS
Input Offset Current
CMVR
Common Mode Input Voltage
Range
CMRR ≥ 50 dB
−1.2
−2.6
−3.25
μA
34
800
1400
nA
–0.3
–0.2
–0.1
4.0
3.6
4.1
72
90
AVOL
Large Signal Voltage Gain
VO = 4 VPP, RL = 2 kΩ to V+/2
86
82
95
VO = 3.75 VPP, RL = 150Ω to V+/2
74
70
78
RL = 2 kΩ to V+/2
4.90
4.94
RL = 150Ω to V+/2
4.75
4.80
ISC
Output Short Circuit Current
(6)
0.10
RL = 150Ω to V+/2
0.20
0.25
Sourcing to V /2
100
75
130
Sinking from V+/2
100
70
130
Output Current
VO = 0.5V from either Supply
PSRR
Power Supply Rejection Ratio
4V ≤ V+ ≤ 6V
IS
Supply Current
No Load
3.7
RIN
Common Mode Input Resistance
AV = +1, f = 1 kHz, RS = 1 MΩ
15
(2)
(3)
(4)
(5)
(6)
dB
0.06
+
V
mA
+75/−90
72
V
dB
RL = 2 kΩ to V+/2
IOUT
(1)
ns
mV
V− ≤ VCM ≤ V+ −1.5V
Output Swing Low
dBc
5
7
Common Mode Rejection Ratio
Output Swing High
pA/√Hz
1
CMRR
VO
nV/√Hz
mA
80
dB
5.5
8.0
mA
MΩ
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. Parametric performance is indicated in the electrical tables under conditions of
internal self-heating where TJ > TA.
All limits are specified by testing or statistical analysis.
Typical Values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates
Positive current corresponds to current flowing into the device.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is
infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
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5V Electrical Characteristics (continued)
Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (1)
Symbol
Parameter
Conditions
Min (2)
Typ (3)
CIN
Common Mode Input Capacitance
AV = +1, RS = 100 kΩ
1.7
ROUT
Output Resistance Closed Loop
RF = 10 kΩ, f = 1 kHz, AV = −1
0.1
RF = 10 kΩ, f = 1 MHz, AV = −1
0.4
DG
Differential Gain
NTSC, AV = +2
RL = 150Ω to V+/2
0.13
DP
Differential Phase
NTSC, AV = +2
RL = 150Ω to V+/2
0.10
4
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Max (2)
Units
pF
Ω
%
deg
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16V Electrical Characteristics
Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 16V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (1)
Symbol
Parameter
−3 dB Bandwidth
BW
Min (2)
Conditions
Typ (3)
AV = +1 (RL = 100Ω)
190
AV = −1 (RL = 100Ω)
60
Max (2)
Units
MHz
BW0.1 dB
0.1 dB Gain Flatness
AV = −2.7
20
MHz
LSBW
-3 dB Bandwidth
AV = +1, VO = 2 VPP (RL = 100Ω)
35
MHz
GBW
Gain Bandwidth Product
AV = +1, (RL = 100Ω)
62
MHz
170
V/μs
(4)
AV = −1
SR
Slew Rate
en
Input Referred Voltage Noise
in
Input Referred Current Noise
f = 10 kHz
23
f = 1 MHz
15
f = 10 kHz
1.1
f = 1 MHz
0.7
THD
Total Harmonic Distortion
f = 5 MHz, VO = 2 VPP, AV = +2
RL = 1 kΩ to V+/2
–64
ts
Settling Time
VO = 2 VPP, ±0.1%, AV = −1
35
VOS
Input Offset Voltage
IB
Input Bias Current
IOS
Input Offset Current
CMVR
Common Mode Input Voltage
Range
(5)
CMRR ≥ 50 dB
−1
−2.6
−3.5
μA
34
800
1800
nA
–0.3
−0.2
−0.1
15.0
14.6
15.1
72
90
AVOL
Large Signal Voltage Gain
VO = 15 VPP, RL = 2 kΩ to V+/2
86
82
95
VO = 14 VPP, RL = 150Ω to V+/2
74
70
78
15.85
15.90
15.45
15.78
+
RL = 150Ω to V /2
RL = 2 kΩ to V+/2
Output Swing Low
RL = 150Ω to V+/2
ISC
Output Short Circuit Current
(6)
ns
mV
V− ≤ VCM ≤ V+ −1.5V
RL = 2 kΩ to V+/2
dBc
5
7
Common Mode Rejection Ratio
Output Swing High
pA/√Hz
1
CMRR
VO
nV/√Hz
dB
dB
0.10
0.15
0.21
0.55
Sourcing to V+/2
60
30
95
Sinking from V+/2
50
15
75
V
V
mA
IOUT
Output Current
VO = 0.5V from either Supply
PSRR
Power Supply Rejection Ratio
15V ≤ V+ ≤ 17V
IS
Supply Current
No Load
RIN
Common Mode Input Resistance
AV = +1, f = 1 kHz, RS = 1 MΩ
32
MΩ
CIN
Common Mode Input Capacitance
AV = +1, RS = 100 kΩ
1.7
pF
(1)
(2)
(3)
(4)
(5)
(6)
±100
72
mA
80
4
dB
6.5
7.8
mA
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. Parametric performance is indicated in the electrical tables under conditions of
internal self-heating where TJ > TA.
All limits are specified by testing or statistical analysis.
Typical Values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates
Positive current corresponds to current flowing into the device.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150 °C Short circuit test is a momentary test. Output short circuit duration is
infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
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16V Electrical Characteristics (continued)
Unless otherwise specified, All limits specified for TJ = 25°C, V+ = 16V, V− = 0V, VO = VCM = V+/2 and RL = 2 kΩ to V+/2.
Boldface limits apply at temperature extremes. (1)
Symbol
ROUT
Parameter
Output Resistance Closed Loop
Min (2)
Conditions
Typ (3)
RF = 10 kΩ, f = 1 kHz, AV = −1
0.1
RF = 10 kΩ, f = 1 MHz, AV = −1
0.3
DG
Differential Gain
NTSC, AV = +2
RL = 150Ω to V+/2
0.12
DP
Differential Phase
NTSC, AV = +2
RL = 150Ω to V+/2
0.12
Max (2)
Units
Ω
%
deg
CONNECTION DIAGRAM
5 Pin SOT-23
Top View
See Package Number DBV0005A
6
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Typical Performance Characteristics
−
+
At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
IS vs.
VS for Various Temperature
IS vs.
VCM for Various Temperature
7
7
125°C
6.5
VS = ±8V
6.5
6
6
5.5
5.5
85°C
5
85°C
IS (mA)
IS (mA)
125°C
4.5
4
25°C
5
4.5
25°C
4
3.5
3.5
3
3
-40°C
2.5
2.5
2
4
6
8
10
12
14
16
-40°C
2
-10 -8
2
18
-6
-4
-2
2
4
6
8
Figure 2.
Figure 3.
IB vs.
VS for Various Temperature
IB vs.
VS for Various Temperature
-0.5
10
-0.5
-0.75
-40°C
0.75
25°C
25°C
-40°C
-1
IB (PA)
-1
IB (PA)
0
VCM (V)
VS (V)
-1.25
-1.5
-1.25
-1.5
85°C
85°C
125°C
-1.75
125°C
-1.75
POSITIVE INPUT
NEGATIVE INPUT
-2
-2
2
4
8
6
10
12
14
16
18
4
2
8
6
10
12
14
16
VS (V)
VS (V)
Figure 4.
Figure 5.
VOS vs.
VS for Various Temperature (Typical Unit)
IOS vs.
VS for Various Temperature
-1
18
0
-10
-1.25
-20
-40°C
25°C
85°C
-30
IOS (nA)
VOS (mV)
-1.5
25°C
-1.75
-40
-50
125°C
85°C
-2
-60
-40°C
125°C
-70
-2.25
-80
-2.5
-90
2
4
6
8
10
12
14
16
18
VS (V)
2
4
6
8
10
12
14
16
18
VS (V)
Figure 6.
Figure 7.
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Typical Performance Characteristics (continued)
−
+
At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
Negative Output Saturation Voltage vs.
VS for Various Temperature
350
125°C
250
85°C
200
150
-40°C
100
25°C
50
125°C
RL = 150:
250
-
RL = 150:
300
300
SATURATION VOLTAGE FROM V (mV)
+
SATURATION VOLTAGE FROM V (mV)
Positive Output Saturation Voltage vs.
VS for Various Temperature
85°C
200
150
-40°C
100
25°C
50
0
0
2
4
6
8
10
12
14
16
18
2
4
6
8
VS (V)
12
14
16
18
VS (V)
Figure 8.
Figure 9.
Output Sinking Saturation Voltage vs.
ISINKING for Various Temperature
Output Sourcing Saturation Voltage vs.
ISOURCING for Various Temperature
10
10
VS = 16V
VS = 16V
-40°C
VOUT FROM V (V)
-40°C
1
+
1
-
VOUT FROM V (V)
10
125°C
85°C
0.1
125°C
85°C
0.1
25°C
25°C
-40°C
-40°C
0.01
0.01
1
10
100
1
1000
ISINKING (mA)
1000
Figure 10.
Figure 11.
Input Current Noise vs.
Frequency
Input Voltage Noise vs.
Frequency
50
VS = 5V
VS = 5V
INPUT VOLTAGE NOISE (nV/ Hz)
INPUT CURRENT NOISE (pA/ Hz)
100
ISOURCING (mA)
4
3
2
1
0
40
30
20
10
0
1
10
100
1000
FREQUENCY (kHz)
1
10
100
1000
FREQUENCY (kHz)
Figure 12.
8
10
Figure 13.
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Typical Performance Characteristics (continued)
−
+
At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
Gain vs. Frequency Normalized
(PIN= −30 dBm)
Gain vs. Frequency Normalized
(PIN=−30dBm)
5
5
AV = -1
0
-5
AV = -5
-15
-20
AV = -2
-25
-30
-35
-40
AV = +10
-10
GAIN (dB)
GAIN (dB)
-5
AV = -10
-10
AV = +1
0
AV = +5
-15
-20
AV = +2
-25
-30
-35
VS = 16V
-40
RL = 100:
-45
VS = 16V
RL = 100:
-45
100k
1M
10M
100M
100k
1G
1M
FREQUENCY (Hz)
100M
1G
Figure 14.
Figure 15.
Gain vs. Frequency for Various VS
(PIN = −30 dBm)
Gain vs. Frequency for Various VS
(PIN = −30 dBm)
6
6
5V
5V
0
3
-6
0
-12
-3
GAIN (dB)
GAIN (dB)
10M
FREQUENCY (Hz)
-18
16V
-24
16V
-6
5V
-9
5V
-30
-36
-12
AV = -1
-15
RL = 100:
RL = 100:
-42
100k
AV = +1
-18
1M
10M
100M
100k
1G
1M
10M
100M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 16.
Figure 17.
Open Loop Gain & Phase vs. Frequency for Various
Temperature
(PIN = −30 dBm)
Relative Gain vs. Frequency for Various Temperature
(PIN = −10 dBm)
70
140
60
120
5
85°C
0
100
50
PHASE
-40°C
80
40
-5
40
GAIN
20
10
GAIN (dB)
60
20
PHASE (°)
GAIN (dB)
85°C
30
25°C
0
0
-20
-10
-40°C
-20
-40
-30
1M
-60
10M
100M
25°C
1G
FREQUENCY (Hz)
-10
-15
-20
AV = +1
RL = 100:
-25
100k
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 18.
Figure 19.
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Typical Performance Characteristics (continued)
+
−
At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
Large Signal Transition
Large Signal Transition
1.5
1.5
RL = 2 k:
1
0.5
0.5
OUTPUT (V)
OUTPUT (V)
RL = 2 k:
1
0
0
-0.5
-0.5
-1
-1
-1.5
-1.5
TIME (10 ns/DIV)
TIME (10 ns/DIV)
Figure 21.
Small Signal Pulse Response
Small Signal Pulse Response
50 mV/DIV
50 mV/DIV
Figure 20.
AV = +1
AV = -1
VS = 5V
VS = 5V
RL = 2 k:
RL = 2 k:
CL = 10 pF
CL = 10 pF
50 ns/DIV
Large Signal Pulse Response
Large Signal Pulse Response
0.5 V/DIV
Figure 23.
0.5 V/DIV
10
50 ns/DIV
Figure 22.
AV = +1
AV = +1
VS = +5V
VS = 16V
RL = 100:
RL = 100:
50 ns/DIV
50 ns/DIV
Figure 24.
Figure 25.
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Typical Performance Characteristics (continued)
−
+
At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
PSRR vs.
Frequency
CMRR vs.
Frequency
100
0
90
10
20
70
30
CMRR (dB)
PSRR (dB)
POSITIVE
80
60
NEGATIVE
50
40
40
50
60
30
70
+5V
20
80
VS = 5V
10
AV = +1
0
10
100
90
+16V
100
1k
10k
1M
100k
10M
10
100
1k
FREQUENCY (Hz)
1M
10M
Figure 27.
Closed Loop Output Resistance vs.
Frequency
Harmonic Distortion
-40
1.0
AV = -1
5V
THD
RS = RF = 10 k:
-50
0.8
16V
DISTORTION (dBc)
CLOSED LOOP OUTPUT RESISTANCE (:)
100k
FREQUENCY (Hz)
Figure 26.
0.9
10k
0.7
0.6
0.5
0.4
0.3
0.2
3RD
-60
-70
2ND
-80
f = 5 MHz
4TH
AV = +2
-90
RL = 1 k:
0.1
VS = 5V
-100
0.0
100
1k
10k
100k
1M
10M
1
FREQUENCY (Hz)
1.5
2
2.5
3
3.5
4
OUTPUT VOLTAGE (VPP)
Figure 28.
Figure 29.
0.1 dB Gain Flatness vs.
Frequency Normalized
Output Power vs.
Input Power (AV = +1)
15
0.2
10 MHz
0.1
16V
-0.1
GAIN (dB)
5V
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
1 MHz
10
OUTPUT POWER (dBm)
0
25 MHz
5
50 MHz
0
100 MHz
-5
AV = -3 @ VS = 5V
AV = -2.7 @ VS = 16V
-0.8
10k
100k
1M
-10
10M
100M
FREQUENCY (Hz)
-10
-5
0
5
10
15
INPUT POWER (dBm)
Figure 30.
Figure 31.
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Typical Performance Characteristics (continued)
+
−
At TJ = 25°C, V = 16 V, V = 0V, RF = 330Ω for AV= +2, RF = 1 kΩ for AV = −1. RL tied to V+/2. Unless otherwise specified.
Differential Gain/Phase vs.
IRE
0.15
0.1
AV = +2
RL = 150:
f = 3.58 MHz
0.06
DIFF GAIN (%)
0.08
VS = 5V
0.09
0.03
0.06
0.04
0.02
PHASE
0
0
-0.03
-0.02
-0.06
-0.04
-0.09
DIFF PHASE (°)
0.12
-0.06
GAIN
-0.12
-0.08
-0.15
-0.1
-100 -75 -50
-25
0
25
50
75 100
IRE
Figure 32.
12
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SNOSAA0B – FEB 2004 – REVISED MARCH 2013
APPLICATION INFORMATION
Application Notes
With its high output current and speed, one of the major applications for the LMH6640 is the VCOM driver in a TFT
panel. This application is a specially taxing one because of the demands it places on the operational amplifier’s
output to drive a large amount of bi-directional current into a heavy capacitive load while operating under unity
gain condition, which is a difficult challenge due to loop stability reasons. For a more detailed explanation of what
a TFT panel is and what its amplifier requirements are, please see the Application Notes section of the LM6584
found on the web at: http://www.ti.com/lit/pdf/snosb08
Because of the complexity of the TFT VCOM waveform and the wide variation in characteristics between different
TFT panels, it is difficult to decipher the results of circuit testing in an actual panel. The ability to make simplifying
assumptions about the load in order to test the amplifier on the bench allows testing using standard equipment
and provides familiar results which could be interpreted using standard loop analysis techniques. This is what
has been done in this application note with regard to the LMH6640’s performance when subjected to the
conditions found in a TFT VCOM application.
Figure 33, shows a typical simplified VCOM application with the LMH6640 buffering the VCOM potential (which is
usually around ½ of panel supply voltage) and looking into the simplified model of the load. The load represents
the cumulative effect of all stray capacitances between the VCOM node and both row and column lines.
Associated with the capacitances shown, is the distributed resistance of the lines to each individual transistor
switch. The other end of this R-C ladder is driven by the column driver in an actual panel and here is driven with
a low impedance MOSFET driver (labeled “High Current Driver”) for the purposes of this bench test to simulate
the effect that the column driver exerts on the VCOM load.
The modeled TFT VCOM load, shown in Figure 33, is based on the following simplifying assumptions in order to
allow for easy bench testing and yet allow good matching results obtained in the actual application:
• The sum of all the capacitors and resistors in the R-C ladder is the total VCOM capacitance and resistance
respectively. This total varies from panel to panel; capacitance could range from 50 nF-200 nF and the
resistance could be anywhere from 20Ω-100Ω.
• The number of ladder sections has been reduced to a number (4 sections in this case) which can easily be
put together in the lab and which behaves reasonably close to the actual load.
In this example, the LMH6640 was tested under the simulated conditions of total 209 nF capacitance and 54Ω as
shown in Figure 33.
RF2
300:
RF1
3 k:
RS
+
10:
VOUT
R1
R2
R3
18:
18:
18:
47n
C3
47n
C4
IOUT
68n
C1
47n
C2
HIGH
CURRENT
DRIVER
Figure 33. LMH6640 in a VCOM Buffer Application with Simulated TFT Load
RS is sometimes used in the panel to provide additional isolation from the load while RF2 provides a more direct
feedback from the VCOM. RF1, RF2, and RS are trimmed in the actual circuit with settling time and stability tradeoffs considered and evaluated. When tested under simulated load conditions of Figure 33, here are the resultant
voltage and current waveforms at the LMH6640 output:
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LMH6640
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VOUT (5V/Div)
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VOUT (5V/DIV)
HIGH CURRENT
DRIVER (5V/Div)
0
0
HIGH CURRENT DRIVE (5V/DIV)
0
0
IOUT (100 mA/Div)
(POSITIVE IS
SOURCING)
IOUT (100 mA/DIV)
(POSITIVE IS SOURCING
0
0
2 Ps/DIV
5 Ps/DIV
Figure 34. VCOM Output, High Current Drive
Waveform, & LMH6640 Output Current Waveforms
Figure 35. Expanded View of Figure 34 Waveforms
showing LMH6640 Current Sinking ½ Cycle
As can be seen, the LMH6640 is capable of supplying up to 160 mA of output current and can settle the output
in 4.4 μs.
The LMH6640 is a cost effective amplifier for use in the TFT VCOM application and is made even more attractive
by its large supply voltage range and high output current. The combination of all these features is not readily
available in the market, especially in the space saving SOT-23 5 pin package. All this performance is achieved at
the low power consumption of 65 mW which is of utmost importance in today’s battery driven TFT panels.
14
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SNOSAA0B – FEB 2004 – REVISED MARCH 2013
REVISION HISTORY
Changes from Revision A (March 2013) to Revision B
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 14
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15
PACKAGE OPTION ADDENDUM
www.ti.com
25-Feb-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMH6640MF/NOPB
NRND
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
AH1A
LMH6640MFX/NOPB
NRND
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
AH1A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
25-Feb-2015
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Dec-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
LMH6640MF/NOPB
SOT-23
DBV
5
1000
178.0
8.4
LMH6640MFX/NOPB
SOT-23
DBV
5
3000
178.0
8.4
Pack Materials-Page 1
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.2
3.2
1.4
4.0
8.0
Q3
3.2
3.2
1.4
4.0
8.0
Q3
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Dec-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMH6640MF/NOPB
SOT-23
DBV
5
1000
210.0
185.0
35.0
LMH6640MFX/NOPB
SOT-23
DBV
5
3000
210.0
185.0
35.0
Pack Materials-Page 2
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