Rohm DA228U Switching diode Datasheet

Data Sheet
Switching Diode
DA228U
Dimensions (Unit : mm)
Applications
Ultra high speed switching
Land size figure (Unit : mm)
1.3
2.0±0.2
0.3±0.1
0.65
2.1±0.1
1.25±0.1
0.9MIN.
(3)
Features
1) Ultra small mold type. (UMD3)
2) High reliability.
0~0.1
0.8MIN
0.1Min
(2)
(1)
(0.65)
1.6
各リードとも
Each lead has same dimension 0.15±0.05
同寸法
(0.65)
UMD3
0.7±0.1
1.3±0.1
0.9±0.1
Construction
Silicon epitaxial planar
(1)D2:C (2)D1:A
(3)D1:C D2:A
Structure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us) (Single)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Rated in slash put frequency
f
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Capacitance between terminals
Ct32
Ct13
Ct12
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© 2011 ROHM Co., Ltd. All rights reserved.
φ0.5±0.05
4.0±0.1
Limits
2.4±0.1
8.0±0.2
1.25±0.1
Unit
V
V
mA
mA
mA
mW/Total
°C
°C
MHz
80
80
200
100
300
200
150
55 to 150
100
Min.
Typ.
Max.
Unit
-
-
1.2
V
IF=100mA
-
-
0.1
5.0
6.5
5.0
μA
pF
pF
pF
VR=80V
1/3
0~0.1
2.25±0.1
0
5.5±0.2
2.4±0.1
3.5±0.05
1.75±0.1
4.0±0.1
Conditions
VR=0V , f=1MHz
2011.06 - Rev.A
Data Sheet
DA228U
100
D1
Ta=75℃
FORWARD CURRENT:IF(mA)
Ta=125℃
10
Ta=-25℃
Ta=150℃
Ta=25℃
1
Ta=75℃
Ta=125℃
Ta=-25℃
10
Ta=150℃
Ta=25℃
1
0
100
200
300
0
400 500 600 700 800 900 1000 1100
100 200 300 400 500 600 700 800 900 1000 1100 1200
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
Ta=150℃
100
D2
Ta=125℃
0.01
Ta=-25℃
0.001
20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
70
1
2
3
4
5
6
7
8
9
3
4
5
6
7
Ct13
8
9
0
970
960
950
AVE:961.5mV
0.7
0.6
0.5
0.4
AVE:0.1065nA
0.2
9
3
4
5
6
7
8
9
10
Ta=25℃
IF=100mA
n=30pcs
D2
1050
1040
1030
1020
AVE:1035.0mV
1010
VF DISPERSION MAP
5
Ta=25℃
VR=15V
n=30pcs
D2
8
7
6
5
4
3
AVE:0.620nA
2
1
0
0
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© 2011 ROHM Co., Ltd. All rights reserved.
2
VF DISPERSION MAP
0.1
IR DISPERSION MAP
1
10
REVERSE CURRENT:IR(nA)
0.8
f=1MHz
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
Ta=25℃
VR=15V
n=30pcs
80
1
10
Ta=25℃
IF=100mA
n=30pcs
980
1
D1
70
1060
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE CURRENT:IR(nA)
2
D1
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
990
0.1
20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0.1
0
940
0
10
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
0.3
0
f=1MHz
1
80
f=1MHz
Ct12
Ta=-25℃
0.00001
FORWARD VOLTAGE:VF(mV)
10
10
0.9
0.001
0.1
0.0001
0
Ta=25℃
0.01
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
Ta=75℃
0.1
Ta=75℃
0.1
10
Ct32
1
1
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
Ta=125℃
0.0001
0.1
0.1
Ta=150℃
D1
10
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct32
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FORWARD CURRENT:IF(mA)
100
D2
REVERSE CURRENT:IR(nA)
100
4
3
AVE:3.34pF
2
1
0
IR DISPERSION MAP
2/3
Ct DISPERSION MAP
2011.06 - Rev.A
Data Sheet
DA228U
5
4
AVE:3.64pF
3
40
2
1
4
3
2
AVE:1.86pF
1
D2
30
20
10
D1
0
Ct DISPERSION MAP
Ct DISPERSION MAP
D2
1
D1
Ifsm
t
0.1
1
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
9
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=100mA
1ms
IF=10A
time
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
VR=6V
10
7
6
5
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
AVE:6.43kV
4
3
2
0
0.01
D1
8
AVE:0.670kV
1
300us
10
0.001
2
4
6
8
FORWARD CURRENT:IF(mA)
trr-IF CHARACTERISTICS
10
1000
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
VR=6V
0
0
0
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct12
Ta=25℃
VR=0V
f=1MHz
n=10pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct13
REVERSE RECOVERY TIME:trr(ns)
5
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
D2
AVE:13.56kV
AVE:1.87kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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3/3
2011.06 - Rev.A
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Notes
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R1120A
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