IP IPT2508-CEA High current density due to double mesa technology Datasheet

IPT2508-xxA
IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT2508-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT2506-xx series is 3 Quadrants triacs, This is specially
recommended for use on inductive Loads.
The IPT2508-xxA (Insulated version) series are isolated
internally they provides a 2500V RMS isolation voltage from
all three terminals to external heatsink.
TO-220A
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
25
A
VDRM / VRRM
800
V
VTM
≤ 1.55
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Symbol
Value
Unit
Tstg
Tj
-40 to +150
-40 to +125
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
VDSM
VRSM
900
900
V
RMS on–state current
(360º conduction angle )
Tc = 90℃
IT(RMS)
25
A
ITSM
260
250
A
I²t
340
A²s
dI / dt
50
A/us
IGM
4
A
PG(AV)
1
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t = 8.3ms
t = 10ms
tp = 10ms
Critical Rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
1
IPT2508-xxA
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
Symbol
IGT
VGT
VGD
IL
Test Condition
IPT2508-xxA
Quadrant
VD = 12V RL = 33Ω
Tj = 25 ℃
VD=VDRM, RL=3.3KΩ,
Tj = 125 ℃
dV/dt
-
35
50
I – II – III
MAX
1.3
V
I – II – III
MIN
0.2
V
-
70
80
-
80
100
MAX
mA
mA
IT = 500mA Gate open
MAX
-
50
75
mA
VD = 67% VDRM gate open Tj = 125 ℃
MIN
-
500
1000
V/us
-
-
-
-
-
-
-
13
22
(dV/dt) c=0.1V/us Tj = 125 ℃
(dI/dt)c
DE
MAX
II
IH
CE
I – II – III
I – III
IG = 1.2 IGT, Tj = 125 ℃
Unit
BE
(dV/dt) c=10V/us Tj = 125 ℃
MIN
Without snubber Tj = 125 ℃
A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value (MAX)
Unit
VTM
ITM = 28A, t p = 380uS
Tj = 25 ℃
1.55
V
IDRM
VD = VDRM
Tj = 25 ℃
10
uA
IRRM
VR = VRRM
Tj = 125 ℃
3
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case (AC)
1.7
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
2
IPT2508-xxA
PACKAGE MECHANICAL DATA
TO-220A
Millimeters
Min
Typ
Max
A
4.4
4.6
B
0.61
0.88
C
0.46
0.70
C2
1.23
1.32
C3
2.4
2.72
D
8.6
9.7
E
9.8
10.4
F
6.2
6.6
G
4.8
5.4
H
28
29.8
L1
3.75
L2
1.14
1.7
L3
2.65
2.95
V
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
3
IPT2508-xxA
IPT2508-xxA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
4
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