CYStech Electronics Corp. N-CHANNEL MOSFET MTN2328M3 Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 1/8 BVDSS ID RDSON@VGS=10V, ID=3A RDSON@VGS=4.5V, ID=3A 100V 3A 130mΩ(typ) 136mΩ(typ) Description The MTN2328M3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High speed switching • Low-voltage drive • Easily designed drive circuits • Pb-free lead plating package Symbol Outline SOT-89 MTN2328M3 G：Gate S：Source D：Drain GD D S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=100°C Pulsed Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range Symbol VDSS VGSS ID ID IDM PD Tj; Tstg Limits 100 ±20 3 1.9 12 *1 2.1 *2 -55~+150 Unit V V A A A W °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper. MTN2328M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 2/8 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Symbol Rth,ja Limit 60 Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* Min. Typ. Max. Unit 100 1 - 1.8 130 136 5 2.5 ±100 1 150 160 - V V nA μA 1188 30 17 7 3.2 29 5 18.4 4 7.5 - 45 70 3 12 1.2 - GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *IS *ISM *VSD *trr *Qrr - Test Conditions S VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=100V, VGS=0 ID=3A, VGS=10V ID=3A, VGS=4.5V VDS=10V, ID=3A pF VDS=25V, VGS=0, f=1MHz ns VDS=50V, ID=3A, VGS=10V, RGEN=6Ω nC VDS=50V, ID=3A, VGS=10V mΩ A V ns nC VGS=0V, IS=3A IF=3A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device MTN2328M3 MTN2328M3 Package SOT-89 (Pb-free lead plating package) Shipping Marking 1000 pcs / Tape & Reel 2328 CYStek Product Specification Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 3/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 140 ID, Drain Current(A) 18 BVDSS, Drain-Source Breakdown Voltage(V) 20 4V,4.5V,6V,7V,8V,10V 16 14 VGS=3.5V 12 10 8 6 4 VGS=3V 125 120 115 110 ID=250μA, VGS=0V 100 -100 0 1 130 105 2 0 135 2 3 4 VDS , Drain-Source Voltage(V) 5 Static Drain-Source On-State resistance vs Drain Current 0 50 100 150 Tj, Junction Temperature(°C) 200 Reverse Drain Current vs Source-Drain Voltage 1000 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=2.5V VGS=3V VGS=4.5V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 VGS=10V 100 0.001 0.2 0.01 0.1 1 ID, Drain Current(A) 10 100 0 R DS(ON), Static Drain-Source On-State Resistance(mΩ) 200 190 ID=3A 180 170 160 150 140 130 120 110 100 0 MTN2328M3 2 4 6 8 VGS, Gate-Source Voltage(V) 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON), Static Drain-Source OnState Resistance(mΩ) -50 10 300 280 260 240 220 200 180 160 140 120 100 80 60 VGS=10V, ID=3A -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2.4 VGS(th), Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 100 C oss ID=250μA 2.2 2 1.8 1.6 1.4 1.2 Crss 1 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 100 140 180 Gate Charge Characteristics 10 10 1 0.1 VDS=10V Pulsed Ta=25°C 0.01 0.001 VDS=50V ID=3A 8 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 60 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 0 10 Maximum Safe Operating Area 4 8 12 16 Qg, Total Gate Charge(nC) 20 Typical Transfer Characteristics 100 20 VDS=10V 18 16 RDS(ON) Limit 10 10μs 100μs ID, Drain Current (A) ID, Drain Current(A) 20 1ms 1 10ms 0.1 100m TA=25°C, Tj=150°, VGS=10V Single Pulse DC 14 12 10 8 6 4 2 0 0.01 0.1 MTN2328M3 1 10 100 VDS , Drain-Source Voltage(V) 1000 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 12 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 5/8 Typical Characteristics(Cont.) Maximum Drain Current vs Junction Temperature 3.5 ID, Maximum Drain Current(A) 3 2.5 2 1.5 1 0.5 TA=25°C, VGS=10V 0 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 10 1 0.1 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJA(t) 4.RθJA=60°C/W 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN2328M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTN2328M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN2328M3 CYStek Product Specification Spec. No. : C583M3 Issued Date : 2012.01.12 Revised Date : 2013.08.11 Page No. : 8/8 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 Device Name H C Date Code 2328 □□□□ D B Style: Pin 1. Gate 2. Drain 3. Source E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2328M3 CYStek Product Specification