CYStech Electronics Corp. Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTE030N10QJ3 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 25.3mΩ(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTE030N10QJ3 TO-252(DPAK) G D S G：Gate D：Drain S：Source Ordering Information Device MTE030N10QJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE030N10QJ3 CYStek Product Specification Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @ TC=25C, VGS=10V Continuous Drain Current @ TC=100C, VGS=10V ID Continuous Drain Current @ TA=25C, VGS=10V *4 Continuous Drain Current @ TA=70C, VGS=10V *4 Pulsed Drain Current *1 IDM Avalanche Current IAS Avalanche Energy @ L=0.1mH, IAS=29A, VDD=25V, VGS=10V *3 EAS Repetitive Avalanche Energy @ L=0.05mH *1, *2 EAR Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ PD Total Power Dissipation @TA=25℃ *4 Total Power Dissipation @TA=70℃ *4 Operating Junction and Storage Temperature Range Tj, Tstg Unit 100 ±20 29 18 6.5 5.2 116 29 42 5 50 20 2.5 1.6 -55~+150 V A mJ W C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max *4 Thermal Resistance, Junction-to-ambient, max Note : *1. Pulse width limited by maximum junction temperature Symbol RθJC RθJA Value 2.5 50 110 Unit C/W *2. Duty cycle ≤ 1% *3. 100% tested by conditions of L=0.1mH, IAS=24A, VGS=10V, VDD=25V *4. Surface mounted on 1 in² copper pad of FR-4 board Characteristics (Tc=25C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS *1 IGSS IDSS RDS(ON) Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 MTE030N10QJ3 *1 Min. Typ. Max. Unit Test Conditions 100 2 - 0.07 8.3 25.3 4 ±100 1 25 33 V V/C V S nA VGS=0V, ID=250μA Reference to 25C, ID=250μA VDS =VGS, ID=250μA VDS =10V, ID=10A VGS=±20V, VDS=0V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125C VGS =10V, ID=15A - 18.6 3.1 10.2 - μA mΩ nC ID=15A, VDS=50V, VGS=10V CYStek Product Specification CYStech Electronics Corp. td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 12 26.6 22.4 14 558 124 111 1.4 - - 0.9 28.6 33.5 29 116 1.2 - Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 3/9 ns VDS=50V, ID=15A, VGS=10V, RG=3Ω pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz A V ns nC IS=15A, VGS=0V IF=15A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTE030N10QJ3 CYStek Product Specification Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 ID, Drain Current (A) 40 BVDSS, Normalized Drain-Source Breakdown Voltage 50 10V,9V,8V,7V 6V 30 5.5V 20 5V 10 VGS=4.5V 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 100 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=6V VGS=7V VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 500 2.4 ID=15A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 400 300 200 100 2 VGS=10V, ID=15A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 25.3mΩtyp. 0 0 0 MTE030N10QJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss Coss 100 Crss 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 50 75 100 125 150 175 Gate Charge Characteristics 10 10 VDS=10V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 1 VDS=15V 0.1 Ta=25°C Pulsed 8 6 4 VDS=50V ID=15A 2 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 5 10 15 Qg, Total Gate Charge(nC) 20 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 35 RDSON Limited 100 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 100μs 1ms 10 10ms 100ms 1 TC=25°C, Tj=150°C VGS=10V, RθJC=2.5°C/W Single Pulse 1s DC 30 25 20 15 10 5 VGS=10V, RθJC=2.5°C/W 0 0.1 0.1 MTE030N10QJ3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 1000 50 45 900 VDS=10V 700 35 Power (W) ID, Drain Current(A) TJ(MAX) =150°C TC=25°C RθJC=2.5°C/W 800 40 30 25 20 600 500 400 15 300 10 200 5 100 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE030N10QJ3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE030N10QJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE030N10QJ3 CYStek Product Specification Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name E030 N10Q Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead : Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE030N10QJ3 CYStek Product Specification