polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 300.0 Watts Push - Pull Package Style LR "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 465 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.38 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 28.0 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 300.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 13 50 Load Mismatch Tolerance 10:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 350 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 350 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 350 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 50.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 7.2 Mho Vds = 10V, Vgs = 5V 0.15 Ohm Vgs = 20V, Ids =16.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 50.00 Amp Ciss Common Source Input Capacitance 200.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 10.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 135.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LR301 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LR301 Freq=352MHz, Vds=28Vdc, Idq=0.8A L3B 1 DIE CAPACITANCE 1000 15 350 14.5 300 14 Coss CAPACITANCE IN PFS 400 100 Pout 250 13.5 200 13 150 12.5 Gain 100 12 50 0 10 15 Pin in W a tts Crss 1 11 5 10 11.5 Efficiency@315W = 67% 0 Ciss 20 0 25 4 8 IV CURVE 16 20 24 28 ID & GM VS VGS L3B 1 DIE ID & GM Vs VG L3B 1 DIE IV 100.00 45 Id in amps; Gm in mhos 40 35 Id 10.00 30 ID IN AMPS 12 VDS IN VOLTS 25 20 15 10 gM 1.00 5 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com