PHILIPS BYC8DX-600 Hyperfast power diode Datasheet

TO
-2
20F
BYC8DX-600
Hyperfast power diode
Rev. 01 — 27 December 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
 Isolated plastic package
 Low thermal resistance
 Low reverse recovery current
 Reduces switching losses in
associated MOSFET
1.3 Applications
 Continuous Current Mode (CCM)
Power Factor Correction (PFC)
 Half-bridge/full-bridge switched-mode
power supplies
 Half-bridge lighting ballasts
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRRM
repetitive peak
reverse voltage
IF(AV)
average forward
current
Conditions
Min
Typ
Max Unit
-
-
600
V
square-wave pulse; δ = 0.5 ;
Th = 47 °C;
see Figure 1; see Figure 2
-
-
8
A
IF = 8 A; Tj = 150 °C;
see Figure 4
-
1.5
1.85 V
IF = 8 A; Tj = 25 °C
-
2
2.9
V
IF = 8 A; VR = 400 V;
dIF/dt = 500 A/µs; Tj = 25 °C;
see Figure 5
-
20
-
ns
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
reverse recovery
time
BYC8DX-600
NXP Semiconductors
Hyperfast power diode
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
K
cathode
2
A
anode
mb
n.c.
mounting base; isolated
mb
Graphic symbol
K
A
001aaa020
1
2
SOD113 (TO-220F)
3. Ordering information
Table 3.
Ordering information
Type number
BYC8DX-600
BYC8DX-600
Product data sheet
Package
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
SOD113
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Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
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BYC8DX-600
NXP Semiconductors
Hyperfast power diode
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse voltage
-
600
V
VRWM
crest working reverse voltage
-
600
V
VR
reverse voltage
DC
-
600
V
IF(AV)
average forward current
square-wave pulse; δ = 0.5 ;
Th = 47 °C; see Figure 1; see Figure 2
-
8
A
IFRM
repetitive peak forward current
square-wave pulse; δ = 0.5 ; tp = 25 µs;
Th = 47 °C
-
16
A
IFSM
non-repetitive peak forward
current
tp = 10 ms; sine-wave pulse;
Tj(init) = 25 °C
-
55
A
tp = 8.3 ms; sine-wave pulse;
Tj(init) = 25 °C
-
60
A
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
150
°C
003aab471
20
a = 1.57
Ptot
(W)
1.9
16
003aab472
30
Ptot
(W)
25
δ =1
2.2
2.8
12
0.5
20
4.0
0.2
15
0.1
8
10
4
5
0
0
0
Fig 1.
2
4
6
IF(AV) (A)
8
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC8DX-600
Product data sheet
0
Fig 2.
4
8
IF(AV) (A)
12
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
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Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
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BYC8DX-600
NXP Semiconductors
Hyperfast power diode
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance from
junction to heatsink
without heatsink compound
-
-
7.2
K/W
with heatsink compound ;
see Figure 3
-
-
5.5
K/W
-
60
-
K/W
Rth(j-a)
thermal resistance from
junction to ambient free air
001aaf257
10
Zth(j-h)
(K/W)
1
10−1
δ=
P
tp
T
10−2
t
tp
10−3
T
10−6
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 3.
Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 6.
Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
-
-
2500
V
Cisol
isolation capacitance
f = 1 MHz ; from cathode to external
heatsink
-
10
-
pF
BYC8DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
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BYC8DX-600
NXP Semiconductors
Hyperfast power diode
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 150 °C; see Figure 4
-
1.5
1.85
V
IF = 8 A; Tj = 25 °C
-
2
2.9
V
IR
reverse current
VR = 500 V; Tj = 100 °C
-
1.1
3
mA
VR = 600 V
-
9
40
µA
Dynamic characteristics
Qr
recovered charge
IF = 1 A; VR = 100 V; dIF/dt = 100 A/µs
-
13
-
nC
trr
reverse recovery time
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C
-
32
40
ns
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C
-
30
52
ns
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; see Figure 5
-
20
-
ns
IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C
-
9.5
12
A
IF = 8 A; VR = 400 V; dIF/dt = 50 A/µs;
Tj = 125 °C
-
1.5
5.5
A
IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;
see Figure 6
-
8
10
V
peak reverse recovery
current
IRM
VFR
forward recovery
voltage
003aac976
20
IF
IF
(A)
dlF
dt
16
trr
12
time
25 %
8
(1)
(2)
(3)
Qr
100 %
4
IR
IRM
003aac562
0
0
Fig 4.
1
2
3
VF (V)
4
Forward current as a function of forward
voltage
BYC8DX-600
Product data sheet
Fig 5.
Reverse recovery definitions; ramp recovery
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Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 11
BYC8DX-600
NXP Semiconductors
Hyperfast power diode
IF
time
VF
VFRM
VF
time
001aab912
Fig 6.
Forward recovery definitions
BYC8DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
6 of 11
BYC8DX-600
NXP Semiconductors
Hyperfast power diode
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 'full pack'
SOD113
A
A1
E
z
P
q
m
T
D
HE
L2
j
L1(1)
k
Q
L
1
b1
2
b
w
c
M
e
0
10
z(2)
20 mm
scale
0.8
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
E
e
HE
max
j
k
L
L 1(1)
L2
max
m
P
Q
q
T
w
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
0.7
0.4
15.8
15.2
10.3
9.7
5.08
19.0
2.7
1.7
0.6
0.4
14.4
13.5
3.3
2.8
0.5
6.5
6.3
3.2
3.0
2.6
2.3
2.6
2.55
0.4
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
OUTLINE
VERSION
SOD113
Fig 7.
REFERENCES
IEC
JEDEC
JEITA
2-lead TO-220F
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
07-06-18
Package outline SOD113 (TO-220F)
BYC8DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
7 of 11
BYC8DX-600
NXP Semiconductors
Hyperfast power diode
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYC8DX-600 v.1
20101227
Product data sheet
-
-
BYC8DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
8 of 11
BYC8DX-600
NXP Semiconductors
Hyperfast power diode
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
BYC8DX-600
Product data sheet
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Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
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BYC8DX-600
NXP Semiconductors
Hyperfast power diode
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BYC8DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
10 of 11
BYC8DX-600
NXP Semiconductors
Hyperfast power diode
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Isolation characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Contact information. . . . . . . . . . . . . . . . . . . . . .10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 27 December 2010
Document identifier: BYC8DX-600
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