SYNSEMI BR3508 Silicon bridge rectifier Datasheet

BR3500 - BR3512
SILICON BRIDGE RECTIFIERS
BR50
PRV : 50 - 1200 Volts
Io : 35 Amperes
0.728(18.50)
0.688(17.40)
FEATURES :
*
*
*
*
*
*
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.570(14.50)
0.530(13.40)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
BR
3500
50
BR
3501
100
BR
3502
200
BR
3504
400
BR
3506
600
BR
3508
800
BR
3510
1000
BR
3512
1200
UNIT
V
VRMS
35
70
140
280
420
560
700
840
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
1200
V
Maximum Average Forward Current Tc = 55°C
IF(AV)
35
A
IFSM
400
A
I 2t
VF
660
1.1
A2S
V
IR
10
µA
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 17.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200
µA
Typical Thermal Resistance (Note 1)
RθJC
1.5
°C/W
Typical Thermal Resistance at Junction to Ambient
RθJA
10
°C
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( BR3500 - BR3512 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
42
35
28
21
14
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
(19cm x 9cm x 11.8cm)
Al.-Finned plate
7
0
0
25
50
75
100
125
150
500
T J = 50 °C
400
300
200
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
100
0
175
1
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
4
6
10
20
40
60 100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
T J = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
2
NUMBER OF CYCLES AT 60Hz
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
1.0
T J = 25 °C
0.1
T J = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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