MBR735 - MBR7150 TO-220AC .185(4.70) .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) Features .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection Highotemperature soldering guaranteed: 260 C/10 seconds,0.25”(6.35mm)from case PIN1 2 .16(4.06) .14(3.56) .11(2.79) .10(2.54) .56(14.22) .53(13.46) .037(0.94) .027(0.68) .025(0.64) .014(0.35) .205(5.20) .195(4.95) PIN 1 Mechanical Data PIN 2 CASE Cases: JEDEC TO-220AC molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBR MBR MBR MBR MBR MBR MBR Units Type Number 735 745 750 760 790 7100 7150 Maximum Recurrent Peak Reverse Voltage 35 45 50 60 90 100 150 V VRRM 24 31 35 42 63 70 105 V Maximum RMS Voltage VRMS VDC 35 45 50 60 90 100 150 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current A I(AV) 7.5 See Fig. 1 Peak Repetitive Forward Current (Square Wave, 20KHz) at o Tc=105 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at (Note 2) IF=7.5A,Tc=25℃ IF=7.5A,Tc=125℃ IF=15A,Tc=25℃ IF=15A,Tc=125℃ o Maximum Instantaneous Reverse Current @ Tc =25 C at Rated DC Blocking Voltage (Note 1) Voltage Rate of Change (Rated VR) Typical Junction Capactance Maximum Thermal Resistance, (Note 3) Operating Junction Temperature Range Storage Temperature Range Notes: o @ Tc=125 C IFRM IFSM IRRM 15.0 150 1.0 － 0.57 0.84 0.72 0.75 0.65 － － IR 0.1 15.0 0.1 10 360 280 dv/dt A 0.5 VF Cj A A 0.92 0.82 － － 0.95 0..92 － － 0.1 5.0 mA mA V/uS 10,000 RθJC RθJA TJ 5.0 15.0 -65 to +150 TSTG -65 to +175 200 V pF 160 o C/W o o C C 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated. www.kersemi.com FIG.1- FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 10 8 6 4 2 MBR735-MBR745 MBR750-MBR7150 0 0 50 100 o CASE TEMPERATURE. ( C) 125 100 75 50 25 150 1 FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 NUMBER OF CYCLES AT 60Hz 100 FIG.4- TYPICAL REVERSE CHARACTERISTICS 40 50 MBR735-MBR745 MBR750-MBR7150 Tj=125 0C 10 10 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 150 Pulse Width=300 s 1% Duty Cycle 1 Tj=25 0C 0.1 MBR735-MBR745 MBR750-MBR760 MBR790-MBR7150 Tj=125 0C 1 0.1 Tj=75 0C 0.01 Tj=25 0C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.001 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE 40 60 80 100 120 140 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 4,000 100 TRANSIENT THERMAL IMPEDANCE. ( OC/W) JUNCTION CAPACITANCE.(pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=25 0C f=1.0MHz Vsig=50mVp-p 1,000 100 MBR735-MBR745 MBR750 & MBR760 MBR790-MBR7150 40 0.1 1.0 10 REVERSE VOLTAGE. (V) 100 10 1 0.1 0.01 0.1 1 10 100 T, PULSE DURATION. (sec) www.kersemi.com