-100mA / -50V Digital transistors (with built-in resistors) DTA143XUB zDimensions (Unit : mm) zStructure PNP silicon epitaxial planar transistor type (Resistor built-in) 0.425 2.0 0.9 0.53 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. 0.32 (3) (1) (2) 0.13 0.65 0.65 1.3 0.53 2.1 1.25 0.425 UMT3F Each lead has same dimensions (1) IN (2) GND (3) OUT Abbreviated symbol : 33 zInner circuit zApplications Inverter, Interface, Driver OUT R1 IN zPackaging specifications R2 Package UMT3F Packaging type Taping TL Code Part No. GND(+) OUT IN 3000 Basic ordering unit (pieces) GND(+) DTA143XUB R1=4.7kΩ, R2=10kΩ zAbsolute maximum ratings (Ta=25°C) Symbol Limits Supply voltage VCC −50 V Input voltage VIN −20 to +7 V −100 mA Parameter Collector current IC(max.) ∗1 −100 mA 200 mW Tj 150 °C Tstg −55 to +150 °C Output current IO Power dissipation PD Junction temperature Range of storage temperature Unit ∗2 ∗1 Characteristics of built-in transistor ∗2 Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.07 - Rev.B DTA143XUB Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Input voltage Output voltage Min. Typ. Max. Unit VI(off) − − −0.3 VI(on) −2.5 − − VO(on) − −100 −300 mV V Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−20mA IO=−10mA, II=−0.5mA II − − −1.8 mA VI=−5V IO(off) − − −500 nA VCC=−50V, VI=0V DC current gain GI 30 − − − Transition frequency fT ∗ − 250 − MHz Input current Output current VO=−5V, IO=−10mA VCE=−10V, IE=5mA, f=100MHz Input resistance R1 3.29 4.7 6.11 kΩ − Resistance ratio R2/R1 1.7 2.1 2.6 − − ∗ Characteristics of built-in transistor zElectrical characteristic curves OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(on) (V) −20 −10 Ta=−40°C 25°C 100°C −5 −2 −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) −1 −2m −1m −500µ Ta=100°C −200µ 25°C −100µ −50µ −40°C −20µ −10µ −5µ −2µ −1µ 1k VCC=−5V VO=−5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) Fig.3 DC current gain vs. output current IO/II=20 −500m OUTPUT VOLTAGE : VO(on) (V) −10m −5m VO=−0.3V −50 DC CURRENT GAIN : GI −100 −200m −100m −50m Ta=100°C 25°C −40°C −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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