BC182, BC182B Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 50 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W Thermal Resistance, Junction−to−Case RqJC 125 °C/W Operating and Storage Junction Temperature Range 3 EMITTER TO−92 CASE 29 STYLE 17 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS MARKING DIAGRAM BC 182B AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BC182G TO−92 (Pb−Free) 5000 Units / Bulk BC182BG TO−92 (Pb−Free) 5000 Units / Bulk BC182BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 5 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC182/D BC182, BC182B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − V Collector −Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 60 − − V Emitter −Base Breakdown Voltage (IE = 100 mA, IC = 0) V(BR)EBO 6.0 − − V Collector Cutoff Current (VCB = 50 V, VBE = 0) ICBO − 0.2 15 nA Emitter−Base Leakage Current (VEB = 4.0 V, IC = 0) IEBO − − 15 nA BC182 40 − − BC182 BC182B BC182 120 180 80 − − − 500 500 − − − 0.07 0.2 0.25 0.6 − − 1.2 − 0.55 − 0.5 0.62 0.83 − 0.7 − − 150 100 200 − − OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) hFE Collector −Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (Note 1) VCE(sat) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) (Note 1) VBE(sat) Base−Emitter On Voltage (IC = 100 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) (Note 1) VBE(on) − V V V DYNAMIC CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT MHz Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cob − − 5.0 pF Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cib − 8.0 − pF 125 240 − − 500 500 − 2.0 10 Small−Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) hfe BC182 BC182B Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz) − NF 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. http://onsemi.com 2 dB BC182, BC182B 1.0 VCE = 10 V TA = 25°C 1.5 0.9 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 0.7 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 1. “Saturation” and “On” Voltages 10 400 300 7.0 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25°C 100 80 60 TA = 25°C Cib 5.0 3.0 Cob 2.0 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 1.0 0.4 50 0.6 0.8 1.0 Figure 2. Current−Gain — Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) TA = 25°C 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25°C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 4. Base Spreading Resistance http://onsemi.com 3 10 20 40 BC182, BC182B PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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