ON BC182 Amplifier transistors amplifier transistor Datasheet

BC182, BC182B
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
1
2
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
50
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
357
°C/W
Thermal Resistance, Junction−to−Case
RqJC
125
°C/W
Operating and Storage Junction
Temperature Range
3
EMITTER
TO−92
CASE 29
STYLE 17
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
MARKING DIAGRAM
BC
182B
AYWW G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BC182G
TO−92
(Pb−Free)
5000 Units / Bulk
BC182BG
TO−92
(Pb−Free)
5000 Units / Bulk
BC182BRL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC182/D
BC182, BC182B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
V
Collector −Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
60
−
−
V
Emitter −Base Breakdown Voltage
(IE = 100 mA, IC = 0)
V(BR)EBO
6.0
−
−
V
Collector Cutoff Current
(VCB = 50 V, VBE = 0)
ICBO
−
0.2
15
nA
Emitter−Base Leakage Current
(VEB = 4.0 V, IC = 0)
IEBO
−
−
15
nA
BC182
40
−
−
BC182
BC182B
BC182
120
180
80
−
−
−
500
500
−
−
−
0.07
0.2
0.25
0.6
−
−
1.2
−
0.55
−
0.5
0.62
0.83
−
0.7
−
−
150
100
200
−
−
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
hFE
Collector −Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA) (Note 1)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA) (Note 1)
VBE(sat)
Base−Emitter On Voltage
(IC = 100 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V) (Note 1)
VBE(on)
−
V
V
V
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
MHz
Common Base Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cob
−
−
5.0
pF
Common Base Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
−
8.0
−
pF
125
240
−
−
500
500
−
2.0
10
Small−Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
hfe
BC182
BC182B
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz)
−
NF
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
http://onsemi.com
2
dB
BC182, BC182B
1.0
VCE = 10 V
TA = 25°C
1.5
0.9
0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
1.0
0.8
0.6
0.4
0.7
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
Figure 1. “Saturation” and “On” Voltages
10
400
300
7.0
C, CAPACITANCE (pF)
200
VCE = 10 V
TA = 25°C
100
80
60
TA = 25°C
Cib
5.0
3.0
Cob
2.0
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
1.0
0.4
50
0.6 0.8 1.0
Figure 2. Current−Gain — Bandwidth Product
r b, BASE SPREADING RESISTANCE (OHMS)
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
TA = 25°C
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
170
160
150
VCE = 10 V
f = 1.0 kHz
TA = 25°C
140
130
120
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mAdc)
5.0
Figure 4. Base Spreading Resistance
http://onsemi.com
3
10
20
40
BC182, BC182B
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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BC182/D
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