Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LM2623 SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 LM2623 General-Purpose, Gated-Oscillator-Based DC/DC Boost Converter 1 Features 3 Description • • • • • • • • • • The LM2623 is a high-efficiency, general-purpose, step-up DC-DC switching regulator for batterypowered and low input voltage systems. It accepts an input voltage between 0.8 V and 14 V and converts it into a regulated output voltage between 1.24 V and 14 V. Efficiencies up to 90% are achievable with the LM2623. 1 • • • Good Efficiency Over a Very Wide Load Range Very Low Output Voltage Ripple Up to 2-MHz Switching Frequency 0.8-V to 14-V Operating Voltage 1.1-V Start-up Voltage 1.24-V to 14-V Adjustable Output Voltage Up to 2-A Load Current at Low Output Voltages 0.17-Ω Internal MOSFET Up to 90% Regulator Efficiency 80-µA Typical Operating Current (Into VDD Pin of Supply) < 2.5-µA Ensured Supply Current In Shutdown Small 8-Pin VSSOP Package (Half the Footprint of Standard 8-Pin SOIC Package); 1.09-mm Package Height 4-mm x 4-mm Thermally Enhanced WSON Package Option In order to adapt to a number of applications, the LM2623 allows the designer to vary the output voltage, the operating frequency (300 kHz to 2 MHz) and duty cycle (17% to 90%) to optimize the part's performance. The selected values can be fixed or can vary with battery voltage or input to output voltage ratio. The LM2623 uses a very simple, on/off regulation mode to produce good efficiency and stable operation over a wide operating range. It normally regulates by skipping switching cycles when it reaches the regulation limit (Pulse Frequency Modulation). Note: Please read the Non-Linear Effect and Choosing the Correct C3 Capacitor sections so that any challenges with designing with this part can be taken into account before a board design/layout is finalized. 2 Applications • • • • • • • Cameras, Pagers and Cell Phones PDAs, Palmtop Computers, GPS devices White LED Drive, TFT, or Scanned LCDs Flash Memory Programming Hand-Held Instruments 1, 2, 3, or 4 Cell Alkaline Systems 1, 2, or 3 Cell Lithium-ion Systems For alternative solutions, See Also: LM2700, LM2622, LM2731, LM2733, and LM2621. Device Information(1) PART NUMBER LM2623 PACKAGE BODY SIZE (NOM) WSON (14) 4.00 mm x 4.00 mm VSSOP (8) 3.00 mm x 3.00 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Typical Application Circuit D1 L1 4.7PH R3 150k 3A C3 V IN 2 Cells 4.7pF + C1 22PF 8 SW 3 BOOT FREQ EN LM2623 1 V DD PGND FB 7 5V 2 6 C2 100PF tant RF1 300k 4 SGND 5 RF2 100k 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM2623 SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 5 Absolute Maximum Ratings ...................................... Handling Ratings....................................................... Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 7 7.1 Overview ................................................................... 7 7.2 Functional Block Diagram ......................................... 7 7.3 Feature Description................................................... 7 7.4 Device Functional Modes.......................................... 8 8 Applications and Implementation ...................... 10 8.1 Application Information............................................ 10 8.2 Typical Application .................................................. 10 9 Power Supply Recommendations...................... 12 10 Layout................................................................... 12 10.1 Layout Guidelines ................................................. 12 10.2 Layout Example .................................................... 13 10.3 WSON Package Devices ...................................... 13 11 Device and Documentation Support ................. 14 11.1 11.2 11.3 11.4 11.5 Device Support...................................................... Documentation Support ........................................ Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 14 14 14 14 14 12 Mechanical, Packaging, and Orderable Information ........................................................... 14 4 Revision History Changes from Revision G (December 2005) to Revision H • 2 Page Added Device Information and Handling Rating tables, Feature Description, Device Functional Modes, Application and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, and Mechanical, Packaging, and Orderable Information sections; moved some curves to Application Curves section .............. 1 Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 LM2623 www.ti.com SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 5 Pin Configuration and Functions WSON Package 14 Pins Top View VSSOP Package 8 Pins Top View Pin Functions PIN WSON VSSOP NAME TYPE DESCRIPTION 1 — NC N/A No Connect 2, 3 1 PGND GND Power Ground (WSON Pins 2 & 3 must be shorted together). 4 2 EN Digital Active-Low Shutdown Input 5 3 FREQ Analog Frequency Adjust. An external resistor connected between this pin and a voltage source sets the switching frequency of the LM2623. 6 4 FB Analog Output Voltage Feedback 7 — NC N/A No Connect 8 — NC N/A No connect 9 5 SGND GND Signal Ground 10 6 VDD Power Power Supply for Internal Circuitry 11 7 BOOT Analog Bootstrap Supply for the Gate Drive of Internal MOSFET Power Switch 12, 13 8 SW Analog Drain of the Internal MOSFET Power Switch. (WSON Pins 12 & 13 must be shorted together.) 14 — NC N/A DAP — DAP Thermal No Connect To be soldered to board for enhanced thermal dissipation. To be electrically isolated/floating. Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 3 LM2623 SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) (2) MIN MAX UNIT SW pin voltage –0.5 14.5 V BOOT, VDD, EN and FB pins –0.5 10 V FREQ pin 100 µA TJmax (3) 150 °C Lead temp. (soldering, 5 sec) 260 °C Power dissipation (TA=25°C) (3) 500 mW (1) (2) (3) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), RθJA (junction-to-ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax – TA)/ RθJA or the number given in the Absolute Maximum Ratings, whichever is lower. 6.2 Handling Ratings Tstg Storage temperature range V(ESD) (1) (2) MIN MAX UNIT –65 150 °C Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) Electrostatic discharge 2 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) kV 0.5 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions (1) MIN MAX VDD pin 3 5 FB, EN pins 0 VDD BOOT pin 0 10 V −40 85 °C Ambient temperature (TA) (1) UNIT V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.4 Thermal Information LM2623 THERMAL METRIC (1) RθJA (1) 4 Junction-to-ambient thermal resistance NHE DGK 14 PINS 8 PINS 40 – 56 240 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 LM2623 www.ti.com SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 6.5 Electrical Characteristics Limits apply for TJ = 25°C and VDD = VOUT = 3.3 V, unless otherwise specified. PARAMETER TEST CONDITION VDD_ST Start-up supply voltage 25°C ILOAD = 0 mA VIN_OP Minimum operating supply voltage (once started) ILOAD = 0 mA VFB FB pin voltage VOUT_MAX Maximum output voltage MIN 1.1 V 0.8 V V 1.2028 1.2772 14 VIN = 3.6 V; VOUT = 5 V; ILOAD = 500 mA 87% VIN = 2.5 V; VOUT = 3.3 V; ILOAD = 200 mA 87% Switch duty cycle IDD UNIT 1.24 Efficiency D MAX 0.65 −40°C to 85°C η TYP (1) V 17 Operating quiescent current (2) FB Pin > 1.3 V; EN Pin at VDD 80 µA FB Pin > 1.3 V; EN Pin at VDD, −40°C to 85°C 110 VDD, BOOT and SW Pins at 5 V; EN Pin < 200 mV 0.01 ISD Shutdown quiescent current (3) ICL Switch peak current limit LM2623A 2.2 IC Switch peak current limit LM2623 1.2 RDS_ON MOSFET switch on resistance VDD, BOOT and SW Pins at 5 V; EN Pin < 200 mV, −40°C to 85°C µA 2.5 2. 85 A Ω 0.17 −40°C to 85°C 0.26 ENABLE SECTION VEN_LO EN pin voltage low (4) −40°C to 85°C VEN_HI EN pin voltage high (4) −40°C to 85°C (1) (2) (3) (4) 0.15 VDD V 0.7 VDD VDD tied to BOOT and EN pins. Frequency pin tied to VDD through 121K resistor. VDD_ST = VDD when start-up occurs. VIN is VDD + D1 voltage (usually 10 mV to 50 mV at start-up). This is the current into the VDD pin. This is the total current into pins VDD, BOOT, SW and FREQ. When the EN pin is below VEN_LO, the regulator is shut down; when it is above VEN_HI, the regulator is operating. 6.6 Typical Characteristics 1.2365 95.0 10mA 1.236 1.2355 85.0 V FB (V) Efficiency (%) 90.0 80.0 75.0 V DD = 3.3V 1.235 1.2345 1.234 600mA 70.0 1.2335 300mA 65.0 60.0 1.8 2.1 2.4 2.7 3.0 3.3 1.233 3.6 3.9 4.2 4.5 1.2325 -40 -25 -10 5 20 35 50 65 80 TEMPERATURE (ºC) Vin VOUT = 5 V Figure 1. Efficiency vs Supply Voltage Figure 2. VFB vs Temperature Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 5 LM2623 SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 www.ti.com Typical Characteristics (continued) 1.30 0 2 300k 75k Start-Up Voltage Frequency (Mhz) 225k 1.5 150 1 0.5 1.20 0 1.100 1.00 0 0.90 0 0 1.2 1.7 2.2 2.7 3.2 3.7 0.800 -50 4.2 0 50 100 Temperatur e Vin (V) Figure 3. Frequency vs VIN Figure 4. Maximum Start-Up Voltage vs Temperature 0.300 3.000 2.900 0.250 Current Limit 2.800 Rds on 0.200 0.150 2A 0.100 1A 2.700 2.600 2.500 2.400 2.300 2.200 0.050 2.100 0.000 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 2.000 - - - 0 10 20 30 40 50 60 70 80 40 30 20 10 Temperature (ºC) Temperature (ºC) Figure 5. Typical RDS(ON) vs Temperature Figure 6. Typical Current Limit vs Temperature VOUT = 5 V Figure 7. Output Voltage vs Supply Voltage 6 Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 LM2623 www.ti.com SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 7 Detailed Description 7.1 Overview The LM2623 is designed to provide step-up DC-DC voltage regulation in battery-powered and low-input voltage systems. It combines a step-up switching regulator, N-channel power MOSFET, built-in current limit, thermal limit, and voltage reference in a single 8-pin VSSOP package Functional Block Diagram. The switching DC-DC regulator boosts an input voltage between 0.8 V and 14 V to a regulated output voltage between 1.24 V and 14 V. The LM2623 starts from a low 1.1 V input and remains operational down to below 0.8 V. This device is optimized for use in cellular phones and other applications requiring a small size, low profile, as well as low quiescent current for maximum battery life during stand-by and shutdown. A high-efficiency gatedoscillator topology offers an output of up to 2 A at low output voltages. Additional features include a built-in peak switch current limit, and thermal protection circuitry. 7.2 Functional Block Diagram 7.3 Feature Description 7.3.1 Gated Oscillator Control Scheme. The on/off regulation mode of the LM2623, along with its ultra-low quiescent current, results in good efficiency over a very wide load range. The internal oscillator frequency can be programmed using an external resistor to be constant or vary with the battery voltage. Adding a capacitor to program the frequency allows the designer to adjust the duty cycle and optimize it for the application. Adding a resistor in addition to the capacitor allows the duty cycle to dynamically compensate for changes to the input/output voltage ratio. We call this a Ratio Adaptive Gated Oscillator circuit. See the Typical Application for sample application circuits. Using the correct RC components to adjust the oscillator allows the part to run with low ripple and high efficiency over a wide range of loads and input/output voltages. Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 7 LM2623 SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 www.ti.com Feature Description (continued) Figure 8. Typical Step-Up Regulator Waveforms 7.3.2 Cycle-to-Cycle PFM When the load doesn't vary over a wide range (like zero to full load), ratio adaptive circuit techniques can be used to achieve cycle to cycle PFM regulation and lower ripple (or smaller output capacitors). The key to success here is matching the duty cycle of the circuit closely to what is required by the input to output voltage ratio. This ratio then needs to be dynamically adjusted for input voltage changes (usually caused by batteries running down). The chosen ratio should allow most of the energy in each switching cycle to be delivered to the load and only a small amount to be stored. When the regulation limit is reached, the overshoot will be small and the system will settle at an equilibrium point where it adjusts the off time in each switching cycle to meet the current requirements of the load. The off time adjustment is done by exceeding the regulation limit during each switching cycle and waiting until the voltage drops below the limit again to start the next switching cycle. The current in the coil never goes to zero like it frequently does in the hysteretic operating mode of circuits with wide load variations or duty cycles that aren't matched to the input/output voltage ratio. Optimizing the duty cycle for a given set of input/output voltages conditions can be done by using the circuit values in the Application Notes. 7.3.3 Shutdown The LM2623 features a shutdown mode that reduces the quiescent current to less than an ensured 2.5 µA over temperature. This extends the life of the battery in battery powered applications. During shutdown, all feedback and control circuitry is turned off. The regulator's output voltage drops to one diode drop below the input voltage. Entry into the shutdown mode is controlled by the active-low logic input pin EN (pin-2). When the logic input to this pin is pulled below 0.15 VDD, the device goes into shutdown mode. The logic input to this pin should be above 0.7 VDD for the device to work in normal stepup mode. 7.3.4 Internal Current Limit and Thermal Protection An internal cycle-by-cycle current limit serves as a protection feature. This is set high enough (2.85 A typical, approximately 4 A maximum) so as not to come into effect during normal operating conditions. An internal thermal protection circuit disables the MOSFET power switch when the junction temperature (TJ) exceeds about 160°C. The switch is re-enabled when TJ drops below approximately 135°C. 7.4 Device Functional Modes 7.4.1 Pulse Frequency Modulation (PFM) Pulse Frequency Modulation is typically accomplished by switching continuously until the voltage limit is reached and skipping cycles after that to just maintain it. This results in a somewhat hysteretic mode of operation. The coil stores more energy each cycle as the current ramps up to high levels. When the voltage limit is reached, the system usually overshoots to a higher voltage than required, due to the stored energy in the coil (see Figure 8). The system will also undershoot somewhat when it starts switching again because it has depleted all the stored energy in the coil and needs to store more energy to reach equilibrium with the load. Larger output capacitors 8 Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 LM2623 www.ti.com SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 Device Functional Modes (continued) and smaller inductors reduce the ripple in these situations. The frequency being filtered, however, is not the basic switching frequency. It is a lower frequency determined by the load, the input/output voltage and the circuit parameters. This mode of operation is useful in situations where the load variation is significant. Power managed computer systems, for instance, may vary from zero to full load while the system is on and this is usually the preferred regulation mode for such systems. 7.4.2 Low Voltage Start-Up The LM2623 can start up from voltages as low as 1.1 V. On start-up, the control circuitry switches the N-channel MOSFET continuously until the output reaches 3 V. After this output voltage is reached, the normal step-up regulator feedback and gated oscillator control scheme take over. Once the device is in regulation, it can operate down to below 0.8 V input, since the internal power for the IC can be boot-strapped from the output using the VDD pin. Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 9 LM2623 SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 www.ti.com 8 Applications and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The LM2623 features a shutdown mode, entry into the shutdown mode is controlled by the active-low logic input pin EN (pin 2). When the logic input to this pin is pulled below 0.15 VDD, the device goes into shutdown mode. The logic input to this pin should be above 0.7 VDD for the device to work in normal start-up mode. 8.2 Typical Application D1 L1 4.7PH R3 150k 3A C3 V IN 2 Cells 4.7pF + C1 22PF 8 SW 3 BOOT FREQ EN LM2623 1 V DD PGND FB 7 5V 2 6 C2 100PF tant RF1 300k 4 SGND 5 RF2 100k Figure 9. LM2623 Typical Application 8.2.1 Design Requirements The LM2623 allows the designer to vary output voltage, operating frequency and duty cycle to optimize the part performance, please read Detailed Design Procedure for details. 8.2.2 Detailed Design Procedure 8.2.2.1 Non-Linear Effect The LM2623 is very similar to the LM2621. The LM2623 is based on the LM2621, except for the fact that the LM2623 takes advantage of a non-linear effect that allows for the duty cycle to be programmable. The C3 capacitor is used to dump charge on the FREQ pin in order to manipulate the duty cycle of the internal oscillator. The part is being tricked to behave in a certain manner, in the effort to make this Pulse Frequency Modulated (PFM) boost switching regulator behave as a Pulse Width Modulated (PWM) boost switching regulator. 8.2.2.2 Choosing the Correct C3 Capacitor The C3 capacitor allows for the duty cycle of the internal oscillator to be programmable. Choosing the correct C3 capacitor to get the appropriate duty cycle for a particular application circuit is a trial and error process. The nonlinear effect that C3 produces is dependent on the input voltage and output voltage values. The correct C3 capacitor for particular input and output voltage values cannot be calculated. Choosing the correct C3 capacitance is best done by trial and error, in conjunction with the checking of the inductor peak current to make sure your not too close to the current limit of the device. As the C3 capacitor value increases, so does the duty cycle. And conversely as the C3 capacitor value decreases, the duty cycle decreases. An incorrect choice of the C3 capacitor can result in the part prematurely tripping the current limit and/or double pulsing, which could lead to the output voltage not being stable. 10 Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 LM2623 www.ti.com SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 Typical Application (continued) 8.2.2.3 Setting the Output Voltage The output voltage of the step-up regulator can be set by connecting a feedback resistive divider made of RF1 and RF2. The resistor values are selected as follows: RF1 = RF2 * [(VOUT/ 1.24) −1] (1) A value of 50k to 100k is suggested for RF2. Then, RF1 can be selected using Equation 1. 8.2.2.4 VDD Supply The VDD supply must be between 3 V to 5 V for the LM2623. This voltage can be bootstrapped from a much lower input voltage by simply connecting the VDD pin to VOUT. In the event that the VDD supply voltage is not a low ripple voltage source (less than 200 millivolts), it may be advisable to use an RC filter to clean it up. Excessive ripple on VDD may reduce the efficiency. 8.2.2.5 Setting the Switching Frequency The switching frequency of the oscillator is selected by choosing an external resistor (R3) connected between VIN and the FREQ pin. See Figure 3 in the Typical Characteristics section of the data sheet for choosing the R3 value to achieve the desired switching frequency. A high switching frequency allows the use of very small surface mount inductors and capacitors and results in a very small solution size. A switching frequency between 300 kHz and 2 MHz is recommended. 8.2.2.6 Output Diode Selection A Schottky diode should be used for the output diode. The forward current rating of the diode should be higher than the peak input current, and the reverse voltage rating must be higher than the output voltage. Do not use ordinary rectifier diodes, since slow switching speeds and long recovery times cause the efficiency and the load regulation to suffer. 8.2.3 Application Curves VOUT = 5 V Figure 10. Efficiency vs Output Current Figure 11. Output Voltage vs Output Current Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 11 LM2623 SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 www.ti.com 9 Power Supply Recommendations The LM2623 can start up from voltages as low as 1.1 V. On start-up, the control circuitry switches the N-channel MOSFET continuously until the output reaches 3 V. After this output voltage is reached, the normal step-up regulator feedback and gated oscillator control scheme take over. Once the device is in regulation, it can operate down to below 0.8 V input, since the internal power for the IC can be boot-strapped from the output using the VDD pin. 10 Layout 10.1 Layout Guidelines The example layouts below follow proper layout guidelines and should be used as a guide for laying out the LM2623 circuit. The LM2623 inductive boost converter sees a high switched voltage at the SW pin, and a step current through the Schottky diode and output capacitor each switching cycle. The high switching voltage can create interference into nearby nodes due to electric field coupling (I = C x dV/dt). The large step current through the diode and the output capacitor can cause a large voltage spike at the SW and BOOST pins due to parasitic inductance in the step current conducting path (V = L x di/dt). Board layout guidelines are geared towards minimizing this electric field coupling and conducted noise. Boost Output Capacitor Placement, Schottky Diode Placement, and Boost Input / VDD Capacitor Placement detail the main (layout sensitive) areas of the LM2623 inductive boost converter in order of decreasing importance: 10.1.1 Boost Output Capacitor Placement Because the output capacitor is in the path of the inductor current discharge path, it will see a high-current step from 0 to IPEAK each time the switch turns off and the Schottky diode turns on. Any inductance along this series path from the diodes cathode, through COUT, and back into the LM2623 GND pin will contribute to voltage spikes at SW. These spikes can potentially over-voltage the SW and BOOST pins, or feed through to GND. To avoid this, COUT+ must be connected as close as possible to the cathode of the Schottky diode, and COUT− must be connected as close as possible to the LM2623 GND bumps. The best placement for COUT is on the same layer as the LM2623 to avoid any vias that can add excessive series inductance. 10.1.2 Schottky Diode Placement In the LM2623 device boost circuit the Schottky diode is in the path of the inductor current discharge. As a result the Schottky diode sees a high-current step from 0 to IPEAK each time the switch turns off, and the diode turns on. Any inductance in series with the diode will cause a voltage spike at SW. This can potentially over-voltage the SW pin, or feed through to VOUT and through the output capacitor, into GND. Connecting the anode of the diode as close as possible to the SW pin, and connecting the cathode of the diode as close as possible to COUT+, will reduce the inductance (LP_) and minimize these voltage spikes. 10.1.3 Boost Input / VDD Capacitor Placement The LM2623 input capacitor filters the inductor current ripple and the internal MOSFET driver currents. The inductor current ripple can add input voltage ripple due to any series resistance in the input power path. The MOSFET driver currents can add voltage spikes on the input due to the inductance in series with the VIN/VDD and the input capacitor. Close placement of the input capacitor to the VDD pin and to the GND pin is critical since any series inductance between VIN/VDD and CIN+ or CIN– and GND can create voltage spikes that could appear on the VIN/VDD supply line and GND. 12 Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 LM2623 www.ti.com SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 10.2 Layout Example 10.3 WSON Package Devices The LM2623 is offered in the 14-lead WSON surface mount package to allow for increased power dissipation compared to the VSSOP-8. For details of the thermal performance as well as mounting and soldering specifications, refer to Application Note AN-1187Leadless Leadframe Package (LLP) (SNOA401). Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 13 LM2623 SNVS188H – MAY 2004 – REVISED NOVEMBER 2014 www.ti.com 11 Device and Documentation Support 11.1 Device Support 11.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 11.2 Documentation Support 11.2.1 Related Documentation For related documentation, see the following: Application Note AN-1187Leadless Leadframe Package (LLP) (SNOA401). 11.3 Trademarks All trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 14 Submit Documentation Feedback Copyright © 2004–2014, Texas Instruments Incorporated Product Folder Links: LM2623 PACKAGE OPTION ADDENDUM www.ti.com 21-Feb-2015 PACKAGING INFORMATION Orderable Device Status (1) LM2623ALD/NOPB Package Type Package Pins Package Drawing Qty ACTIVE WSON NHE 14 1000 Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 2623A (4/5) LM2623AMM NRND VSSOP DGK 8 1000 TBD Call TI Call TI -40 to 85 S46A LM2623AMM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S46A LM2623AMMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S46A LM2623LD/NOPB ACTIVE WSON NHE 14 1000 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 2623AB LM2623LDX/NOPB ACTIVE WSON NHE 14 4500 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 2623AB LM2623MM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S46B LM2623MMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 S46B (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 21-Feb-2015 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 20-Feb-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM2623ALD/NOPB WSON NHE 14 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM2623AMM VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM2623AMM/NOPB VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM2623AMMX/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM2623LD/NOPB WSON NHE 14 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM2623LDX/NOPB WSON NHE 14 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM2623MM/NOPB VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM2623MMX/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 20-Feb-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM2623ALD/NOPB WSON NHE 14 1000 213.0 191.0 55.0 LM2623AMM VSSOP DGK 8 1000 210.0 185.0 35.0 LM2623AMM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0 LM2623AMMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0 LM2623LD/NOPB WSON NHE 14 1000 213.0 191.0 55.0 LM2623LDX/NOPB WSON NHE 14 4500 367.0 367.0 35.0 LM2623MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0 LM2623MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0 Pack Materials-Page 2 MECHANICAL DATA NHE0014A LDA14A (REV A) www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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