Infineon BTN8962TA High current pn half bridge Datasheet

BTN8962TA
High Current PN Half Bridge
NovalithIC™
Data Sheet
Rev. 1.0, 2013-05-17
Automotive Power
High Current PN Half Bridge
BTN8962TA
Table of Contents
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
2.2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
4.1
4.2
4.3
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.2
5.2.1
5.2.2
5.2.3
5.3
5.3.1
5.3.2
5.3.3
5.3.4
5.3.5
5.4
5.4.1
5.4.2
5.4.3
5.4.4
5.4.5
5.4.6
Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Status Flag Diagnosis with Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6
6.1
6.2
6.3
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PWM Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Data Sheet
2
6
6
7
8
22
22
22
23
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
NovalithIC™
1
BTN8962TA
Overview
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Path resistance of max. 30.3 mΩ @ 150 °C (typ. 14.2 mΩ @ 25 °C)
High Side: max. 13.4 mΩ @ 150 °C (typ. 6.7 mΩ @ 25 °C)
Low Side: max. 16.9 mΩ @ 150 °C (typ. 7.5 mΩ @ 25 °C)
Enhanced switching speed for reduced switching losses
Capable for high PWM frequency combined with active freewheeling
Low quiescent current of typ. 7 μA @ 25 °C
Switched mode current limitation for reduced power dissipation
in overcurrent
Current limitation level of 30 A min.
Status flag diagnosis with current sense capability
Overtemperature shut down with latch behaviour
Undervoltage shut down
Driver circuit with logic level inputs
Adjustable slew rates for optimized EMI
Operation up to 40V
Green Product (RoHS compliant)
AEC Qualified
PG-TO263-7-1
Description
The BTN8962TA is an integrated high current half bridge for motor drive applications. It is part of the NovalithIC™
family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver
IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing
EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs,
diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature,
undervoltage, overcurrent and short circuit.
The BTN8962TA provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption.
Type
Package
Marking
BTN8962TA
PG-TO263-7-1
BTN8962TA
Data Sheet
3
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Diagram
2
Block Diagram
The BTN8962TA is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming an integrated high
current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by
chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing
to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with
current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage,
overcurrent and short circuit. The BTN8962TA can be combined with other BTN8962TA to form H-bridge and 3phase drive configurations.
2.1
Block Diagram
VS
Undervolt.
detection
Current
Sense
Current
Limitation
HS
Overtemp .
detection
Gate Driver
HS
IS
OUT
Digital Logic
LS off
IN
HS off
Gate Driver
LS
INH
Current
Limitation
LS
Slewrate
Adjustment
SR
GND
Figure 1
Block Diagram
2.2
Terms
Following figure shows the terms used in this data sheet.
VS
I VS , -I D (H S)
IIN
V IN
I IN H
VIN H
IN
VS
INH
OUT
ISR
V SR
VIS
I IS
I OU T , I L
VD S(L S)
SR
IS
V D S(H S)
V OU T
GND
I GN D , I D (L S)
Figure 2
Data Sheet
Terms
4
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
8
1234 5 67
Figure 3
Pin Assignment BTN8962TA (top view)
3.2
Pin Definitions and Functions
Pin
Symbol
I/O
Function
1
GND
-
Ground
2
IN
I
Input
Defines whether high- or lowside switch is activated
3
INH
I
Inhibit
When set to low device goes in sleep mode
4,8
OUT
O
Power output of the bridge
5
SR
I
Slew Rate
The slew rate of the power switches can be adjusted by connecting
a resistor between SR and GND
6
IS
O
Current Sense and Diagnostics
7
VS
-
Supply
Bold type: pin needs power wiring
Data Sheet
5
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
-0.3
40
V
–
-40
–
V
Tj ≥ 25°C
-38
–
V
Tj < 25°C
–
40
V
Tj ≥ 25°C
–
38
V
Tj < 25°C
VIN
VINH
VSR
VS -VIS
VIS
-0.3
5.3
V
–
-0.3
1.0
V
–
-0.3
40
V
–
-20
40
V
–
ID(HS)
ID(LS)
-30
30
A
TC < 85°C
-27
27
A
Voltages
4.1.1
Supply Voltage
4.1.2
Drain-Source Voltage High Side
4.1.3
Drain-Source Voltage Low Side
4.1.4
Logic Input Voltage
4.1.5
Voltage at SR Pin
4.1.6
Voltage between VS and IS Pin
4.1.7
Voltage at IS Pin
VS
VDS(HS)
VDS(LS)
Currents
4.1.8
HS/LS Continuous Drain Current2)
switch active
TC < 125°C
switch active
4.1.9
4.1.10
2)
HS/LS Pulsed Drain Current
HS/LS PWM Current2)
ID(HS)
ID(LS)
ID(HS)
ID(LS)
A
tpulse = 10ms
single pulse
TC < 85°C
TC < 125°C
-70
-63
70
63
-40
-36
40
36
-42
-37
42
37
-40
150
°C
–
-55
150
°C
–
kV
HBM3)
A
f = 1kHz, DC = 50%
TC < 85°C
TC < 125°C
A
f = 20kHz, DC = 50%
TC < 85°C
TC < 125°C
Temperatures
4.1.11
Junction Temperature
4.1.12
Storage Temperature
Tj
Tstg
ESD Susceptibility
4.1.13
ESD Resistivity HBM
IN, INH, SR, IS
OUT, GND, VS
VESD
-2
-6
2
6
1) Not subject to production test, specified by design
2) Maximum reachable current may be smaller depending on current limitation level
3) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001 (1,5kΩ, 100pF)
Data Sheet
6
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
General Product Characteristics
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Maximum Single Pulse Current
70
60
|I max | [A]
50
40
30
20
10
0
1,0E-03
1,0E-02
1,0E-01
1,0E+00
1,0E+01
t pulse[s]
BTN8962TA Maximum Single Pulse Current (TC < 85°C)
Figure 4
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
4.2
Pos.
Functional Range
Parameter
Symbol
Limit Values
Min.
Max.
Unit
Conditions
4.2.1
Supply Voltage Range for
Normal Operation
VS(nor)
8
18
V
–
4.2.2
Extended Supply Voltage Range
for Operation
VS(ext)
5.5
40
V
Parameter
Deviations possible
4.2.3
Junction Temperature
Tj
-40
150
°C
–
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
Data Sheet
7
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
General Product Characteristics
4.3
Pos.
Thermal Resistance
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
4.3.1
Thermal Resistance
Junction-Case, High Side Switch
Rthjc(HS) = ΔTj(HS)/ Pv(HS)
RthJC(HS) –
0.6
0.9
K/W
1)
4.3.2
Thermal Resistance
Junction-Case, Low Side Switch
Rthjc(LS) = ΔTj(LS)/ Pv(LS)
RthJC(LS) –
1.7
2.4
K/W
1)
4.3.3
Thermal Resistance
Junction-Ambient
RthJA
20
–
K/W
1) 2)
–
1) Not subject to production test, specified by design
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
Data Sheet
8
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5
Block Description and Characteristics
5.1
Supply Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
–
2.2
3.3
Unit
Conditions
mA
VINH = 5 V
VIN = 0 V or 5 V
RSR = 0 Ω
General
5.1.1
IVS(on)
Supply Current
DC-mode
normal operation
(no fault condition)
5.1.2
Quiescent Current
IVS(off)
–
7
13
µA
–
–
65
µA
VINH = 0 V
VIN = 0 V or 5 V
Tj < 85 °C 1)
VINH = 0 V
VIN = 0 V or 5 V
I V S ( o f f ) [µA]
1) Not subject to production test, specified by design
Vs = 18V
Vs = 14V
Vs = 8V
T [°C]
Figure 5
Data Sheet
Typical Quiescent Current vs. Junction Temperature
9
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5.2
Power Stages
The power stages of the BTN8962TA consist of a p-channel vertical DMOS transistor for the high side switch and
a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in
a separate top chip. Both switches allow active freewheeling and thus minimizing power dissipation during PWM
control.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The
typical on state resistance characteristics are shown in Figure 6.
Low Side Switch
RON(LS) [mΩ]
RON(HS) [mΩ]
High Side Switch
Tj = 150°C
Tj = 150°C
Tj = 25°C
Tj = 25°C
Tj = -40°C
Tj = -40°C
VS [V]
Figure 6
Data Sheet
VS [V]
Typical ON State Resistance vs. Supply Voltage
10
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5.2.1
Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
mΩ
IOUT = 9 A; VS = 13.5 V
Tj = 25 °C; 1)
Tj = 150 °C
IOUT = 6 A; VS = 6 V
Tj = 25 °C; 1)
Tj = 150 °C
VINH = 0 V; VOUT = 0 V
Tj < 85 °C; 1)
VINH = 0 V; VOUT = 0 V
Tj = 150 °C
IOUT = -9 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
Max.
High Side Switch - Static Characteristics
5.2.1
ON State High Side Resistance
RON(HS)
–
–
6.7
10
–
13.4
mΩ
5.2.2
5.2.3
Leakage Current High Side
IL(LKHS)
Reverse Diode Forward-Voltage VDS(HS)
High Side2)
–
–
9
12
–
18.4
–
–
2
µA
–
–
50
µA
–
–
–
0.9
0.8
0.6
–
–
0.8
–
–
7.5
12
–
16.9
–
–
10.5
15
–
23.8
–
–
2
µA
–
–
20
µA
V
Low Side Switch - Static Characteristics
5.2.4
ON State Low Side Resistance
RON(LS)
mΩ
mΩ
5.2.5
5.2.6
Leakage Current Low Side
IL(LKLS)
Reverse Diode Forward-Voltage -VDS(LS)
Low Side2)
V
0.9
0.8
0.7
–
–
–
–
–
0.9
1) Not subject to production test, specified by design
2) Due to active freewheeling, diode is conducting only for a few µs, depending on
Data Sheet
11
IOUT = -9 A; VS = 13.5 V
Tj = 25 °C; 1)
Tj = 150 °C
IOUT = -6 A; VS = 6 V
Tj = 25 °C; 1)
Tj = 150 °C
VINH = 0 V; VOUT = VS
Tj < 85 °C; 1)
VINH = 0 V; VOUT = VS
Tj = 150 °C
IOUT = 9 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
RSR
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5.2.2
Switching Times
IN
td r(H S)
tr(H S)
td f(H S)
tf(H S)
t
VOUT
80%
80%
ΔVOUT
ΔVOUT
20%
20%
t
Figure 7
Definition of switching times high side (Rload to GND)
IN
td f(L S) tf(L S)
t d r(L S) tr(L S)
t
VOUT
80%
80%
ΔVOUT
ΔV OUT
20%
20%
t
Figure 8
Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
•
•
ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)).
Data Sheet
12
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5.2.3
Power Stages - Dynamic Characteristics
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 2 Ω, 30µH < Lload < 40µH (in series to Rload), single pulse,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
Max.
High Side Switch Dynamic Characteristics
5.2.7
5.2.8
5.2.9
5.2.10
Rise-Time of HS
Switch ON Delay Time HS
Fall-Time of HS
Switch OFF Delay Time HS
tr(HS)
µs
0.05
–
0.2
0.25
0.35
1
0.8
–
5.6
1.5
–
1.9
3.1
4.7
12.3
4.8
–
26.5
0.05
–
0.2
0.25
0.35
1
0.8
–
5.6
0.4
–
1.2
2.2
3.2
7.6
3.7
–
20
0.05
–
0.2
0.25
0.35
1
0.8
–
5.6
tdr(HS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
tf(HS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
tdf(HS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Low Side Switch Dynamic Characteristics
5.2.11
5.2.12
5.2.13
5.2.14
Rise-Time of LS
Switch OFF Delay Time LS
Fall-Time of LS
Switch ON Delay Time LS
Data Sheet
tr(LS)
µs
tdr(LS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
0.1
–
0.5
1.4
2
6
2.4
–
14
0.05
–
0.2
0.25
0.35
1
0.8
–
5.6
1.4
–
2.3
3.7
5.5
14
5.6
–
31
tf(LS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
tdf(LS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
13
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5.3
Protection Functions
The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the current
limitation (Chapter 5.3.3). In case of overtemperature the BTN8962TA will apply the slew rate determined by the
connected slew rate resistor. In current limitation mode the highest slew rate possible will be applied independent
of the connected slew rate resistor. Overtemperature and overcurrent are indicated by a fault current IIS(LIM) at the
IS pin as described in the paragraph “Status Flag Diagnosis with Current Sense Capability” on Page 17 and
Figure 12.
5.3.1
Undervoltage Shut Down
To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the
supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY)
if the supply voltage rises above the switch-on voltage VUV(ON).
5.3.2
Overtemperature Protection
The BTN8962TA is protected against overtemperature by an integrated temperature sensor. Overtemperature
leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a
minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis
ΔT in the meantime.
Repetitive use of the overtemperature protection impacts lifetime.
5.3.3
Current Limitation
The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch
(high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS.
During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both
MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS.
Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the
motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the
effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10.
IL
tCLS
ICLx
ICLx 0
t
Figure 9
Data Sheet
Timing Diagram Current Limitation (Inductive Load)
14
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
Low Side Switch
I C L L [A]
I C L H [A]
High Side Switch
Tj = -40°C
Tj = 25°C
Tj = -40°C
ICLH0
ICLL0
Tj = 150°C
Tj = 25°C
Tj = 150°C
dIL/dt [A/ms]
Figure 10
dIL/dt [A/ms]
Typical Current Limitation Detection Level vs. Current Slew Rate dIL/dt
Low Side Switch
ICLL [A]
ICLH [A]
High Side Switch
Tj = -40°C
Tj = -40°C
Tj = 25°C
Tj = 25°C
Tj = 150°C
Tj = 150°C
VS [V]
Figure 11
VS [V]
Typical Current Limitation Detection Levels vs. Supply Voltage
In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.
This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN8962TA
Data Sheet
15
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short
time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor
start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction
temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.
5.3.4
Short Circuit Protection
The device provides embedded protection functions against
•
•
•
output short circuit to ground
output short circuit to supply voltage
short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shut down of the device.
5.3.5
Electrical Characteristics - Protection Functions
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
VS increasing
VS decreasing, INH = 1
Min.
Typ.
Max.
–
–
5.5
V
3.0
–
4.5
V
–
0.2
–
V
2)
Under Voltage Shut Down
5.3.1
Switch-ON Voltage
5.3.2
Switch-OFF Voltage
5.3.3
ON/OFF Hysteresis
1)
VUV(ON)
VUV(OFF)
VUV(HY)
Current Limitation
5.3.4
Current Limitation Detection level ICLH0
High Side
30
42
54
A
VS = 13.5 V
5.3.5
Current Limitation Detection level ICLL0
Low Side
30
42
54
A
VS = 13.5 V
tCLS
70
115
210
µs
VS = 13.5 V; 2)
Current Limitation Timing
5.3.6
Shut OFF Time for HS and LS
Thermal Shut Down
5.3.7
Thermal Shut Down Junction
Temperature
TjSD
155
175
200
°C
–
5.3.8
Thermal Switch ON Junction
Temperature
TjSO
150
–
190
°C
–
5.3.9
Thermal Hysteresis
ΔT
–
7
–
K
2)
5.3.10
Reset Pulse at INH Pin (INH low) treset
4
–
–
µs
2)
1) With decreasing Vs < 5.5V activation of the Current Limitation mode may occur before Undervoltage Shut Down.
2) Not subject to production test, specified by design.
Data Sheet
16
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5.4
Control and Diagnostics
5.4.1
Input Circuit
The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the
integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of
the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH
pin has to be set to low. No external driver is needed. The BTN8962TA can be interfaced directly to a
microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded.
5.4.2
Dead Time Generation
In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same
time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so
called dead time between switching off one MOSFET and switching on the other. The dead time generated in the
driver IC is automatically adjusted to the selected slew rate.
5.4.3
Adjustable Slew Rate
In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external
resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation
within his own application by connecting an external resistor RSR to GND.
5.4.4
Status Flag Diagnosis with Current Sense Capability
The sense pin IS is used as a combined current sense and error flag output.
In normal operation (current sense mode), a current source is connected to the status pin, which delivers a current
proportional to the forward load current flowing through the active high side switch. The sense current can be
calculated out of the load current by the following equation:
1 I IS = --------------⋅ I L + I IS ( offset )
(1)
dk ILIS
The other way around, the load current can be calculated out of the sense current by following equation:
I L = dkILIS ⋅ ( IIS – IIS ( offset ) )
(2)
The differential current sense ratio dkilis is defined by:
I L2 – IL1
d k ILIS = -------------------------------------------I IS ( IL2 ) – IIS ( I L1 )
(3)
If the high side drain current is zero (ISD(HS) = 0A) the offset current IIS = IIS(offset) still will be driven.
The external resistor RIS determines the voltage per IS output current. The voltage can be calculated by
VIS = RIS . IIS.
In case of a fault condition the status output is connected to a current source which is independent of the load
current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external resistor
and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS.
Data Sheet
17
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
Normal operation:
current sense mode
Fault condition:
error flag mode
VS
IIS(offset)
IIS(offset)
ESD-ZD
IS
IIS~ ILoad
ESD-ZD
IS
IIS~ ILoad
Sense
output
logic
IIS(lim)
Figure 12
VS
RIS VIS
Sense
output
logic
IIS(lim)
RIS VIS
Sense Current and Fault Current
IIS
[mA]
IIS(lim)
lo w
er
dk I
LIS
lu e
va
k IS
e r d IL
high
IIS(offset)
valu
e
Current Sense Mode
(High Side)
Error Flag Mode
ICLx
Figure 13
Data Sheet
IL
[A]
Sense Current vs. Load Current
18
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5.4.5
Truth Table
Device State
Inputs
Outputs
Mode
INH
IN
HSS
LSS
IS
0
X
OFF
OFF
0
1
0
OFF
ON
IIS(offset) LSS active
1
1
ON
OFF
CS
HSS active
Under-Voltage (UV)
X
X
OFF
OFF
0
UV lockout, reset
Overtemperature (OT)
or Short Circuit of HSS or LSS
0
X
OFF
OFF
0
Stand-by mode, reset of latch
1
X
OFF
OFF
1
Shut-down with latch, error detected
Current Limitation Mode/
Overcurrent (OC)
1
1
OFF
ON
1
Switched mode, error detected1)
1
0
ON
OFF
1
Switched mode, error detected1)
Normal Operation
1) Will return to normal operation after
Stand-by mode
tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.3)
Inputs
Switches
Current Sense / Status Flag IS
0 = Logic LOW
OFF = switched off
IIS(offset) = Current sense - Offset (for
conditions see table: Current
Sense)
1 = Logic HIGH
ON = switched on
X = 0 or 1
Data Sheet
CS = Current sense - high side (for
conditions see table: Current
Sense)
1 = Logic HIGH (error)
19
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Block Description and Characteristics
5.4.6
Electrical Characteristics - Control and Diagnostics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
Control Inputs (IN and INH)
5.4.1
High level Voltage
INH, IN
VINH(H)
VIN(H)
–
–
1.75
1.6
2.15
2
V
–
5.4.2
Low level Voltage
INH, IN
VINH(L)
VIN(L)
1.1
1.4
–
V
–
5.4.3
Input Voltage hysteresis
VINHHY
VINHY
–
–
350
200
–
–
mV
1)
5.4.4
Input Current high level
10
30
150
µA
VIN = VINH = 5.3 V
5.4.5
Input Current low level
IINH(H)
IIN(H)
IINH(L)
IIN(L)
10
25
125
µA
VIN = VINH = 0.4 V
103
RIS = 1 kΩ
IL1 = 3 A
IL2 = 15 A
VS = 13.5 V
RIS = 1kΩ
VINH = 0 V
VS = 18V; VINH = 5 V
ISD(HS) = 0 A
Current Sense
5.4.6
Differential Current Sense ratio
in static on-condition
dkILIS = dIL / dIIS
dkILIS
5.4.7
Maximum analog Sense Current, IIS(lim)
Sense Current in fault Condition
5.4.8
Isense Leakage current
5.4.9
Isense offset current
IISL
IIS(offset)
7.2
10
12.8
4
5
6.5
mA
–
–
1
µA
50
200
440
µA
IIS-offset [mA]
IIS-offset [mA]
1) Not subject to production test, specified by design
Tj = -40°C
Tj = 25°C
Tj = 150°C
VS [V]
Figure 14
Data Sheet
T [°C]
Typical Current Sense Offset Current
20
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
IIS(lim) [mA]
Block Description and Characteristics
Tj = 150°C
Tj = 25°C
Tj = -40°C
VS [V]
Figure 15
Data Sheet
Typical characteristic of the maximum analog Sense Current in fault condition (Pos. 5.4.7.)
21
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Application Information
6
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
6.1
Application Circuit
Microcontroller
XC866
Reverse Polarity
Protection
Voltage Regulator
I/O
WO
Reset
RO
Q
Vdd
Vss
CQ
22µF
D
(IPD90P03P4L-04)
TLE
4278G
I
VS
CI
470nF
L1
GND
C1
100nF
R3
10kΩ
CD
47nF
A/D I/O I/O I/O A/D
DZ 1
10V
optional
R12
10kΩ
BTN8962TA
VS
R11
10kΩ
INH
IN
C1IS
1nF
C10
470µF
C1O 2V
220nF
OUT
C2 O2V
220nF
C1OUT
220nF
SR
C12
100nF
Figure 16
R21
10kΩ
INH
IN
IS
C2OUT
C29
220nF 100nF
GND
R22
10kΩ
VS
OUT
M
C19
100nF
IS
R112
1kΩ
BTN8962TA
R212
1kΩ
SR
GND
R111
0..51kΩ
R211
0..51kΩ
C2IS
1nF
C22
100nF
Application Circuit: H-Bridge with two BTN8962TA
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.2
Layout Considerations
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The
BTN8962TA has no separate pin for power ground and logic ground. Therefore it is recommended to assure that
the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of
the device (GND / pin 1) is minimized. If the BTN8962TA is used in a H-bridge or B6 bridge design, the voltage
offset between the GND pins of the different devices should be small as well.
Due to the fast switching behavior of the device in current limitation mode a low ESR electrolytic capacitor C10 from
VS to GND is necessary. This prevents destructive voltage peaks and drops on VS. This is needed for both PWM
and non PWM controlled applications. To assure efficiency of C10 and C19/ C29 the stray inductance must be low.
Therefore the capacitors must be placed very close to the device pins. The value of the capacitors must be verified
in the real application, taking care for low ripple and transients at the Vs pin of the BTN8962TA.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors greater than 7kΩ.
Data Sheet
22
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Application Information
Microcontroller
I/O
WO
Reset
RO
Vdd
XC866
Vss
I/O
I/O
Reverse Polarity
Protection
Voltage Regulator
Q
CQ
22µF
TLE
4278G
L1
CI
470nF
DZ 1
10V
GND
R3
10kΩ
INH
IN
C9
100nF
C10
470µF
CO 2V
220nF
OUT
COUT
220nF
IS
R12
1kΩ
Figure 17
CIS
1nF
R11
C2
0..51kΩ
100nF
C1
100nF
BTN8962TA
VS
R1
10kΩ
VS
I
CD
47nF
I/O
R2
10kΩ
D
(IPD90P03P4L-04)
M
SR
GND
Application Circuit: Half-Bridge with a BTN8962TA (Load to GND)
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.3
PWM Control
For the selection of the max. PWM frequency the choosen rise/fall-time and the requirements on the duty cycle
have to be taken into account. We recommend a PWM-period at least 10 times the rise-time.
Example:
Rise-time = fall-time = 4µs.
=> T-PWM = 10 * 4µs = 40µs.
=> f-PWM = 25kHz.
The min. and max. value of the duty cycle (PWM ON to OFF percentage) is determined by the real fall time plus
the real rise time. In this example a duty cycle make sense from approximately 20% to 80%.
If a wider duty cycle range is needed, the PWM frequency could be decreased and/or the rise/fall-time could be
accelerated.
Data Sheet
23
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Package Outlines
7
Package Outlines
4.4
10 ±0.2
1.27 ±0.1
0...0.3
B
0.05
2.4
0.1
4.7 ±0.5
2.7 ±0.3
7.551)
1±0.3
9.25 ±0.2
(15)
A
8.5 1)
0...0.15
7 x 0.6 ±0.1
6 x 1.27
0.5 ±0.1
0.25
M
A B
8˚ MAX.
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
0.1 B
GPT09114
Footprint
4.6
16.15
9.4
10.8
0.47
0.8
8.42
Figure 18
PG-TO263-7-1 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
24
Dimensions in mm
Rev. 1.0, 2013-05-17
High Current PN Half Bridge
BTN8962TA
Revision History
8
Revision History
Initial release.
Data Sheet
25
Rev. 1.0, 2013-05-17
Edition 2013-05-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
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