Pan Jit BAV199S Surface mount, low leakage switching diode Datasheet

BAS116TW/BAW156DW/BAV170DW/BAV199S
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE
100 Volts
200mWatts
POWER
FEATURES
•
•
•
•
Suface mount package ideally suited for automatic insertion.
Very low leakage current. 2nA typical at VR=75V.
Low capacitance. 2pF max at VR=0V, f=1MHz
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363 plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx weight: 0.008 gram
• Marking: BAS116TW :PA,BAW156DW :P4,BAV170DW :P3,BAV199S :PB
ABSOLUTE RATINGS (each diode)
PA RA ME TE R
S ym b o l
Va lue
Uni ts
VR
75
V
V RM
100
V
F
0.2
A
FSM
4.0
A
S ym b o l
Va lue
Uni ts
P o we r D i s s i p a ti o n (No te 1 )
P TOT
200
mW
The r m a l Re s i s ta nc e , J unc ti o n to A m b i e nt ( No te 1 )
R θJ A
625
J u n c t i o n Te m p e r a t u r e
TJ
-55 to 150
O
C
S t o r a g e Te m p e r a t u r e
T S TG
-55 to 150
O
C
R e ve r s e Vo l t a g e
P e a k R e ve r s e Vo l t a g e
C o nti nuo us F o r wa r d C ur r e nt
I
N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 us
I
THERMAL CHARACTERISTICS
PA RA ME TE R
6
5
4
6
5
4
6
2
3
1
2
3
1
O
5
4
6
2
3
1
C /W
5
4
2
3
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
1
Fig.48
BAS116TW
REV.0.1-FEB.11.2009
Fig.51
BAW156DW
Fig.52
BAV170DW
Fig.32
BAV199S
PAGE . 1
BAS116TW/BAW156DW/BAV170DW/BAV199S
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
PA RA ME TE R
S ym b o l
R e ve r s e B r e a k d o w n Vo l t a g e
V (B R)
Te s t C o n d i t i o n
I R = 1 0 0 uA
T YP.
MA X .
Uni ts
75
V R= 7 5 V
V R= 7 5 V , TJ= 1 5 0
V
5
80
nA
0.9
1.0
1.1
1.25
V
V R= 0 V , f = 1 M H Z
2.0
pF
IF = IR = 1 0 m A , R L = 1 0 0 Ω
3.0
us
R e ve r s e C ur r e nt
I
F o rwa rd Vo lta g e
VF
IF = 1 m A
IF = 1 0 m A
IF = 5 0 m A
IF = 1 5 0 m A
To t a l C a p a c i t a n c e
CT
R e v e r s e R e c o v e r y Ti m e
t rr
R
M IN .
O
0.002
8.0
C
CHARACTERISTIC CURVES (each diode)
1000
I F , Forward current (mA)
I R , Reverse Leakage(nA)
10
1.0
0.1
V R =75V
0.01
100
O
T A =-25 C
10
O
T A =75 C
1.0
O
O
T A =125 C
0.001
0
50
100
150
200
0.1
0.2
0.4
0.6
T A =25 C
0.8
1.0
1.2
V F , Forward Voltage (V)
Tj, Junction Temperature (Deg C)
Fig. 1-Reverse Leakage vs. Junction Temperature
Fig. 2-Forward Current vs. Forward Voltage
C T , Total Capacitance (pF)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
V R , Reverse Voltage ( V)
Fig. 3- Total capacitance vs. Reverse Voltage
REV.0.1-FEB.11.2009
PAGE . 2
BAS116TW/BAW156DW/BAV170DW/BAV199S
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.11.2009
PAGE . 4
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