PD - 97219 IRF6636PbF IRF6636TRPbF l l l l l l l l l RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Qg Qgd Qgs2 Qrr Qoss Vgs(th) 6.1nC 1.9nC 7.3nC 10nC 1.8V tot 18nC DirectFET ISOMETRIC ST Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT Description The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6636PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g h Typical RDS(on) (mΩ) 20 ID = 18A 15 10 T J = 125°C 5 T J = 25°C 0 0 1 2 3 4 5 6 7 8 e e f 9 10 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage VGS, Gate-to-Source Voltage (V) VDS Max. Units 20 ±20 18 15 81 140 28 14 V A mJ A 6.0 ID= 14A 5.0 4.0 VDS= 16V VDS= 10V 3.0 2.0 1.0 0.0 0 10 20 30 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 14A. 1 05/29/06 IRF6636PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– ∆ΒVDSS/∆TJ RDS(on) Breakdown Voltage Temp. Coefficient ––– 15 ––– Static Drain-to-Source On-Resistance ––– 3.2 4.5 ––– 4.6 6.4 VGS = 0V, ID = 250µA V mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 18A i VGS = 4.5V, ID = 14A i VGS(th) Gate Threshold Voltage 1.55 ––– 2.45 V ∆VGS(th)/∆TJ IDSS Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS gfs Qg Conditions Typ. Max. Units VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V S VDS = 10V, ID = 14A Forward Transconductance 52 ––– ––– Total Gate Charge ––– 18 27 Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– Qgd Gate-to-Drain Charge ––– 6.1 Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 4.1 ––– Qsw ––– 8.0 ––– Qoss RG Output Charge Gate Resistance ––– ––– 10 ––– ––– 1.5 td(on) Turn-On Delay Time ––– 14 ––– VDD = 16V, VGS = 4.5Vi tr Rise Time ––– 19 ––– ID = 14A td(off) Turn-Off Delay Time ––– 16 ––– tf Fall Time ––– 6.2 ––– Ciss Input Capacitance ––– 2420 ––– Coss Output Capacitance ––– 780 ––– Crss Reverse Transfer Capacitance ––– 360 ––– Min. Typ. Max. Units ––– ––– 52 ––– ––– 140 integral reverse VDS = 10V nC VGS = 4.5V ID = 14A See Fig. 15 nC VDS = 10V, VGS = 0V Ω ns Clamped Inductive Load See Fig. 16 & 17 VGS = 0V pF VDS = 10V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Conditions MOSFET symbol A showing the VSD Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 14A, VGS = 0V i trr Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 14A Qrr Reverse Recovery Charge ––– 7.3 11 nC di/dt = 100A/µs iSee Fig. 18 (Body Diode)e Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF6636PbF Absolute Maximum Ratings Max. Units 2.2 1.4 42 270 -40 to + 150 W Parameter e e f Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG °C Thermal Resistance Parameter em km lm fm RθJA RθJA RθJA RθJC RθJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. Units ––– 12.5 20 ––– 1.0 58 ––– ––– 3.0 ––– °C/W 0.017 W/°C 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 τJ 0.1 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τA τ1 τ2 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri SINGLE PULSE Ci i/Ri ( THERMAL RESPONSE ) 0.01 τ5 τi (sec) Ri (°C/W) R5 R5 τ5 τA 0.6677 0.000066 1.0463 0.000896 1.5612 0.004386 29.2822 0.686180 25.4550 32 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). www.irf.com Rθ is measured at TJ of approximately 90°C. Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6636PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 100 10 10 2.5V ≤60µs PULSE WIDTH 2.5V 1 1 10 1 100 1000 0.1 Fig 4. Typical Output Characteristics 100 1000 1.5 ID = 18A VDS = 10V ≤60µs PULSE WIDTH Typical RDS(on) (Normalized) ID, Drain-to-Source Current (Α) 10 Fig 5. Typical Output Characteristics 1000 100 T J = 150°C T J = 25°C 10 T J = -40°C 1 1.0 V GS = 10V V GS = 4.5V 0.5 0.1 1 2 3 4 50 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd T J = 25°C Vgs = 3.0V Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V 40 Typical RDS(on) ( mΩ) C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 100000 -60 -40 -20 0 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) 1 V DS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Crss 30 20 10 100 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 BOTTOM VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 0 20 40 60 80 100 120 140 ID, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage www.irf.com IRF6636PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 10 T J = 150°C T J = 25°C T J = -40°C 1 100µsec 10 1msec 10msec 1 T A = 25°C 0.1 T J = 150°C VGS = 0V Single Pulse 0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 VSD, Source-to-Drain Voltage (V) 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area Fig 10. Typical Source-Drain Diode Forward Voltage 2.4 80 2.2 VGS(th) Gate threshold Voltage (V) 90 70 ID, Drain Current (A) 0.10 60 50 40 30 20 10 2.0 1.8 ID = 50µA 1.6 1.4 1.2 1.0 0.8 0.6 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 13. Threshold Voltage vs. Temperature Fig 12. Maximum Drain Current vs. Case Temperature EAS , Single Pulse Avalanche Energy (mJ) 120 ID TOP 6.4A 9.8A BOTTOM 14A 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6636PbF Current Regulator Same Type as D.U.T. Id Vds 50KΩ Vgs .2µF 12V .3µF + V - DS D.U.T. Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Current Sampling Resistors Fig 15a. Gate Charge Test Circuit Qgd Qgodr Fig 15b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS tp D.U.T V RGSG + V - DD IAS 20V tp A I AS 0.01Ω Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit LD VDS VDS 90% + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% Fig 17a. Switching Time Test Circuit 6 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRF6636PbF D.U.T Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent - Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs DirectFET Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D G D www.irf.com S S D D 7 IRF6636PbF DirectFET Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.79 G 0.75 0.57 H 0.53 0.30 J 0.26 0.98 K 0.88 2.28 L 2.18 M 0.616 0.676 R 0.020 0.080 0.17 P 0.08 IMPERIAL MIN 0.187 0.146 0.108 0.014 0.023 0.023 0.030 0.021 0.010 0.035 0.086 0.0235 0.0008 0.003 MAX 0.191 0.156 0.112 0.018 0.024 0.024 0.031 0.022 0.012 0.039 0.090 0.0274 0.0031 0.007 DirectFET Part Marking 8 www.irf.com IRF6636PbF DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6636TRPBF). For 1000 parts on 7" reel, order IRF6636TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) METRIC IMPERIAL METRIC IMPERIAL MIN MIN MAX CODE MAX MIN MIN MAX MAX 12.992 6.9 N.C A N.C 177.77 N.C 330.0 N.C 0.795 0.75 N.C B N.C 19.06 20.2 N.C N.C 0.504 0.53 0.50 C 13.5 12.8 0.520 12.8 13.2 0.059 0.059 D 1.5 N.C 1.5 N.C N.C N.C 3.937 2.31 E 58.72 N.C 100.0 N.C N.C N.C N.C N.C F N.C 0.53 N.C 0.724 13.50 18.4 G 0.488 0.47 11.9 N.C 12.4 0.567 12.01 14.4 H 0.469 0.47 11.9 N.C 11.9 0.606 12.01 15.4 Loaded Tape Feed Direction CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.158 0.165 4.00 4.20 0.197 0.205 5.00 5.20 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/06 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/