Dynex MF70-1200 Fast recovery diode Datasheet

MF70
MF70
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4195-2.1
DS1955-3.0 January 2000
APPLICATIONS
KEY PARAMETERS
VRRM
1600V
IF(AV)
70A
IFSM
700A
Qr
26µC
trr
915ns
■ Inverse Parallel Or Series Connected Diode
■ Power Supplies
■ High Frequency Applications
FEATURES
■ Glass Passivation
■ Fast Recovery Characteristics
■ High Voltage Capabilities
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
MF70-1600
MF70-1400
MF70-1200
1600
1400
1200
Conditions
VRSM = VRRM + 100V
Lower voltage grades available.
For stud anode add suffix 'R' to type number.
Outline type code: DO5.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
70
A
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 75oC
IF(RMS)
RMS value
Tcase = 75oC
110
A
Continuous (direct) forward current
Tcase = 75oC
90
A
IF
1/8
MF70
SURGE RATINGS
Symbol
IFSM
I2t
Conditions
Parameter
Max.
Units
Surge (non-repetitive) forward current
10ms half sine; with 100% VRRM, Tj = 125oC
700
A
I2t for fusing
10ms half sine; Tj = 125oC
2450
A2s
THERMAL AND MECHANICAL DATA
Conditions
Parameter
Symbol
Min.
Max.
Units
Rth(j-c)
Thermal resistance - junction to case
dc
-
0.37
o
Rth(c-h)
Thermal resistance - case to heatsink
Mounting torque 3.5Nm
with mounting compound
-
0.2
o
Forward (conducting)
-
125
o
Reverse (blocking)
-
125
o
-55
125
˚C
3.2
3.8
Nm
Typ.
Max.
Units
Tvj
Tstg
-
C/W
C/W
C
Virtual junction temperature
Storage temperature range
Mounting torque
Use torque wrench
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 210A peak, Tcase = 25oC
-
2.0
V
IRM
Peak reverse current
At VRRM, Tcase = 100oC
-
10
mA
trr
Reverse recovery time
IF = 1A, diRR/dt = 25A/µs
Tcase = 25oC, VR = 100V
-
300
ns
Qr
Recovered charge
IF = 100A, diRR/dt = 100A/µs
-
26
µC
trr
Reverse recovery time
Tcase = 25oC, VR = 100V
-
915
ns
VTO
Threshold voltage
At Tvj = 125oC
-
1.3
V
rT
Slope resistance
At Tvj = 125oC
-
3.34
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
80
-
V
VFRM
2/8
Parameter
MF70
CURVES
500
Measured under pulse
conditions
80
Tcase = 25˚C
Transient forward voltage - (V)
Instantaneous forward current - (A)
400
300
200
100
95%
40
5%
20
Tj = 125˚C
0
Tj = 25˚C
0
60
0
0
200 400 600 800 1000 1200
Rate of rise of forward current - (A/µs)
1.0
2.0
3.0
Instantaneous forward voltage - (V)
Fig.1 Maximum (limit) forward characteristics
Fig.2 Forward recovery voltage vs rate of rise of
forward voltage
Thermal impedance - ˚C/W
0.5
0.4
d.c.
0.3
0.2
0.1
0
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.3 Maximum transient thermal impedance - junction to case
3/8
MF70
Recovery time - (µs)
1.05
1.0
Tcase = 125˚C
0.9
IF = 100A
95%
0.8
IF = 50A
0.7
IF = 100A
5%
0.6
0.55
IF = 50A
1
1000
10
100
Rate of rise of reverse current - (A/µs)
Recovered charge - (µC)
Fig.4 Recovery time vs dIR/dt
40
IF = 100A
T
= 125˚C
36 case
95%
32
IF = 50A
28
IF = 100A
24
5%
20
IF = 50A
16
12
8
4
0
1
10
100
Rate of change of reverse current - (A/µs)
1000
Fig.5 Recovered charge vs dIR/dt
Peak current - (A)
5000
Tcase = 55˚
1000
50
10
00
00
25
00
10
00 500 300
10 50H
0
z
0
100
10
100
1000
Pulse width - (µs)
Fig.6 Frequency curves - square waveform
4/8
10000
MF70
Peak current - (A)
500
Tcase = 85˚
100
10
00
0
10
10
50
00
25
00
10
50
00
0
50
10 Hz
0
30
0
100
1000
Pulse width - (µs)
10000
Fig.7 Frequency curves - square waveform
Peak current - (A)
500
2.0J
100
1.0
0.5
0.2
0.1
10
10
100
1000
Pulse width - (µs)
10000
Fig.8 Energy per pulse - square waveform
Peak current - (A)
5000
Tcase = 55˚
1000
50
10
00
0
100
10
00
25
00
10
3
00 500 00
10
0
100
1000
Pulse width - (µs)
50
Hz
10000
Fig.9 Frequency curves - sine waveform
5/8
MF70
Peak current - (A)
5000
Tcase = 85˚
1000
50
10
00
00
25
00
10
00
50 30
0 0
10
0
50
Hz
0
100
10
100
1000
Pulse width - (µs)
10000
Fig.10 Frequency curves - sine waveform
Peak current - (A)
500
2.0J
1.0
100
0.5
0.2
0.1
20
10
100
1000
Pulse width - (µs)
Fig.11 Energy per pulse - sine waveform
6/8
10000
MF70
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
Hex. 17.35mm AF max
23
Ø4.0
11.5
Thread 1/4 in
28 UNF 2A
Weight: 20g
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
7/8
MF70
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
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North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4195-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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