Fairchild FEP16AT Fast rectifiers (glass passivated) Datasheet

+
PIN 3
CASE
PIN 2
Positive CT
Features
PIN 1
•
Low forward voltage drop.
PIN 3
•
High surge current capacity.
•
High current capability.
•
FEP16AT - FEP16JT
FEP16AT - FEP16JT
PIN 1
CASE
PIN 2
Negative CT
Suffix "A"
1
2
3
TO-220AB
High reliability.
PIN 1
AC
PIN 3
CASE
PIN 2
Doubler
Suffix "D"
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
VRRM
IF(AV)
IFSM
Tstg
TJ
TA = 25°C unless otherwise noted
Value
Parameter
Units
16AT
16BT
16CT
16DT
16FT
16GT
16HT
16JT
50
100
150
200
300
400
500
600
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
.375 " lead length @ TA = 100°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
V
16
A
200
A
-55 to +150
-55 to +150
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
8.33
W
RθJA
Thermal Resistance, Junction to Ambient
15
°C/W
RθJL
Thermal Resistance, Junction to Lead
2.2
°C/W
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Device
Parameter
16AT
VF
trr
IR
CT
Forward Voltage @ 8.0A
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Reverse Current @ rated VR
TA = 25°C
TA = 100°C
Total Capacitance
VR = 4.0. f = 1.0 MHz
2001 Fairchild Semiconductor Corporation
16BT
16CT 16DT
16FT
0.95
Units
16GT
16HT
1.3
35
16JT
1.5
50
ns
µA
µA
10
500
85
V
60
pF
FEP16AT - FEP16JT, Rev. C
FEP16AT - FEP16JT
20
16
12
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
8
4
0
0
25
50
75
100
125
Ambient Temperature [ºC]
150
175
Figure 1. Forward Current Derating Curve
Peak Forward Surge Current, IFSM [A]
Average Rectified Forward Current, IF [A]
Typical Characteristics
200
160
120
80
40
0
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 2. Non-Repetitive Surge Current
Reverse Characteristics
1000
100
FEP16AT-FEP16DT
10
Reverse Current, IR [mA]
Forward Current, IF [A]
1
FEP16FT-FEP16JT
1
0.1
TA = 25 º C
Pulse Width = 300µ
µs
2% Duty Cycle
0.01
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage, VF [V]
100
T A = 100 ºC
10
1
T A = 25º C
0.1
1.6
1.8
Figure 3. Forward Voltage Characteristics
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
Total Capacitance, CT [pF]
100
90
80
70
FEP16AT-FEP16DT
60
50 FEP16FT-FEP16JT
40
1
2
5
10
20
Reverse Voltage, VR [V]
50
100
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
trr
(-)
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
0
-0.25A
(+)
OSCILLOSCOPE
(Note 1)
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
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with instructions for use provided in the labeling, can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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