Diodes DMN2230U N-channel enhancement mode field effect transistor Datasheet

DMN2230U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
NEW PRODUCT
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Mechanical Data
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Low On-Resistance
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110 mΩ @ VGS = 4.5V
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145 mΩ @ VGS = 2.5V
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230 mΩ @ VGS = 1.8V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 5)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
SOT-23
D
G
Maximum Ratings
S
TOP VIEW
Internal Schematic
TOP VIEW
@TA = 25°C unless otherwise specified
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
ID
2.0
A
IDM
7
A
Symbol
Value
Units
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Thermal Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
PD
600
mW
RθJA
208
°C/W
TJ, TSTG
-55 to +150
°C
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
DMN2230U
Document number: DS31180 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2230U
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 20V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±10
μA
VGS = ±12V, VDS = 0V
VGS(th)
0.5
⎯
1.0
V
VDS = VCS, ID = 250μA
⎯
81
113
170
110
145
230
mΩ
NEW PRODUCT
OFF CHARACTERISTICS (Note 6)
VGS = 0V, ID = 10μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS (ON)
VGS = 4.5V, ID = 2.5A
VGS = 2.5V, ID = 1.5A
VGS = 1.8V, ID = 1.0A
Forward Transfer Admittance
|Yfs|
⎯
5
⎯
S
VDS =5V, ID = 2.4A
Diode Forward Voltage (Note 6)
VSD
⎯
0.8
1.1
V
VGS = 0V, IS = 1.05A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
188
⎯
pF
Output Capacitance
Coss
⎯
44
⎯
pF
pF
Reverse Transfer Capacitance
Crss
⎯
30
⎯
Turn-On Delay Time
td(on)
⎯
8
⎯
tr
⎯
3.8
⎯
td(off)
⎯
19.6
⎯
tf
⎯
8.3
⎯
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
ns
VDS = 10V, VGS = 0V
f = 1.0MHz
VDD = 10V, RL = 10Ω
ID = 1A, VGEN = 4.5V, RG = 6Ω
6. Short duration pulse test used to minimize self-heating effect.
10
8
7
8
6
5
6
4
4
3
2
2
1
0
0
0
DMN2230U
Document number: DS31180 Rev. 4 - 2
2 of 4
www.diodes.com
0.5
1
1.5
2
2.5
3
3.5
4
June 2008
© Diodes Incorporated
DMN2230U
1.8
1.6
R DS(ON) NORMALIZED
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
VGS = 2.5V
ID = 1.5A
VGS = 1.8V
0.1
VGS = 2.5V
VGS = 4.5V
VGS = 4.5V
ID = 2.5A
1.4
1.2
VGS = 1.8V
ID = 1.0A
1
0.8
0.01
0.01
0.1
1
ID, DRAIN-SOURCE CURRENT
Fig. 3 On-Resistance vs.
Drain-Source Current & Gate Voltage
-25 0
25
50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
1,000
f = 1MHz
0.8
ID = 250µA
C, TOTAL CAPACITANCE (pF)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.6
-50
10
1
0.6
0.4
0.2
Ciss
100
Coss
Crss
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation with Temperature
10
0
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
20
10
IS, SOURCE CURRENT (A)
NEW PRODUCT
1
1
0.1
0.01
0.001
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
DMN2230U
Document number: DS31180 Rev. 4 - 2
3 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2230U
Ordering Information
(Note 7)
Part Number
DMN2230U-7
Notes:
Case
SOT-23
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
NEW PRODUCT
Marking Information
22N
Date Code Key (If Applicable)
Year
2007
Code
U
Month
Code
22N = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
2008
V
Jan
1
Feb
2
Mar
3
2009
W
Apr
4
May
5
2010
X
Jun
6
Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0°
8°
α
All Dimensions in mm
D
B
C
G TOP VIEW S
E
D
G
H
K
J
M
L
Suggested Pad Layout
Z
Value (in
mm)
3.4
G
0.7
X
0.9
Y
1.4
C
2.0
E
0.9
Dimensions
Y
Z
G
C
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2230U
Document number: DS31180 Rev. 4 - 2
4 of 4
www.diodes.com
June 2008
© Diodes Incorporated
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