D44H8 D44H11 NPN SILICON POWER TRANSISTORS ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIER DESCRIPTION The D44H8, and D44H11 are silicon multiepitaxial planar NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D44H8, D44H11 are complementary with D45H8, D45H11. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value D44H8 V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC Collector Current I CM Collector Peak Current P t ot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj June 1997 o Max. O perating Junction Temperature Uni t D44H11 60 80 V 5 V 10 A 20 A 50 W -65 to 150 o C 150 o C 1/5 D44H8/D44H11 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CBO Collector Cut-off Current (IE = 0) V CB = rated V CEO I EBO Emitter Cut-off Current (I C = 0) V EB = 5V V CEO(sus )∗ Collector-Emitter Sustaining Voltage I C = 100 mA for D44H8 for D44H11 Min. Typ . Max. Un it 10 µA 100 µA 60 80 V V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 8 A I B = 0.4 A 1 V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 8 A I B = 0.8 A 1.5 V DC Current G ain IC = 2 A IC = 4 A V CE = 1 V V CE = 1 V h FE∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % Safe Operating Area 2/5 Derating Curves 60 40 D44H8/D44H11 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/5 D44H8/D44H11 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 16.4 L4 0.645 13.0 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/5 L4 P011C D44H8/D44H11 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5