SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBAF5817-G Thru CDBAF5819-G Reverse Voltage: 20 - 40 Volts Forward Current: 1A or 3A RoHS Device Features For surface mounted applications. 2010 Metal to silicon rectifier,majority carrier conduction. Plastic package has Underwriters Lab, flamability classification94V-0. 0.181(4.60) 0.173(4.40) 0.002(0.05) High surge capacity. 0.091(2.30) 0.083(2.10) 0.020(R0.50) High current capability, low forward voltage. Mechanical data 0.045(1.15) 0.029(0.75) Case: Packed with FRP substrate and epoxy underfilled. 0.045(1.15) 0.029(0.75) 0.046(1.16) 0.034(0.86) Terminals: Solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band . Dimensions in inches and (millimeter) Weight: 0.02 gram(approx.). Maximum Ratings (at T A =25 C unless otherwise noted) O Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit Parameter Max. Repetitive Peak Reverse Voltage V RRM 20 30 40 V V DC 20 30 40 V Max. RMS Voltage V RMS 14 21 28 V Peak Surge Forward Current 8.3ms single half sine-wave suprimposed on rate load (JEDEC method) I FSM 30 A IO 1 A Max. DC Bolcking Voltage Max. Average Forward Current Typ ica l The rmal Res ist an ce (Not e 3) R St or ag e Temper at ur e T STG -50 to +1 25 Tj +1 25 Max. Oper at ing Ju nc tion Temper at ur e O 80 JA C/ W O C O C Electrical Characteristics (at T A =25 C unless otherwise noted) O Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit Parameter Max. Forward Voltage at 1.0 A (Note 1) at 3.0 A (Note 1) VF Max. DC Reverse Current at Rated DC Blocking Voltage Tj = 25 C Tj = 100 C IR 0.5 10 mA Typical Junction Capacitance (Note 2) Cj 110 pF O 0.45 0.75 O 0.550 0.875 0.60 0.90 V Notes: (1) Pulse test width PW = 300usec, 1% duty cycle. (2) Measured at 1.0 Mhz and applied reverse voltage of 4.0 Volts. (3) Thermal Resistance Junction to Ambient. REV:A QW-BB014 Page 1 SMD Schottky Barrier Rectifiers SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBAF5817-G Thru CDBAF5819-G) Fig. 2 - Reverse characteristics Fig. 1 - Forward characteristics 100 10 Reverse current (mA) Forward current (A) CDBAF5817-G CDBAF5818-G CDBAF5819-G 1.0 O Tj =25 C 0.1 0.01 10 O Tj=125 C 1 0.1 O 0.01 Tj =25 C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 60 40 80 100 Forward voltage (V) Percent of rated peak reverse voltage (%) Fig.3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 400 F=1MHz Tj=25 C 100 Average forward current(A) Junction capacitance( P F) O single phase half wave 60Hz resistive or inductive 1.2 1.0 0.8 0.6 0.4 0.2 0 10 0.1 1 4 10 100 0 25 50 75 100 125 150 O Reverse voltage (V) Lead temperature ( C) Fig.5 - Max. Non repetitive peak forward surge current Peak surge forward current(A) 30 8.3 ms single half sine wave JEDEC mehode 25 20 15 10 5 0 1 10 100 Number of cycles at 60 Hz REV:A QW-BB014 Page 2