TI1 DLP470TP 0.47 4k uhd dmd Datasheet

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DLP470TP
DLPS105A – JANUARY 2018 – REVISED MAY 2018
DLP470TP 0.47 4K UHD DMD
1 Features
3 Description
•
The DLP470TP digital micromirror device (DMD) is a
digitally controlled micro-electromechanical system
(MEMS) spatial light modulator (SLM) that enables
bright 4K UHD display systems. The DLP® 0.47” 4K
UHD chipset is composed of the DLP470TP DMD,
two DLPC6421 display controllers, and DLPA3005
PMIC and LED driver. The compact physical size of
the chipset provides a complete system solution that
enables small form factor 4K UHD displays.
1
•
•
•
0.47-Inch Diagonal Micromirror Array
– 4K UHD (3840 × 2160) Display Resolution
– 5.4-µm Micromirror Pitch
– ±17° Micromirror Tilt (Relative to Flat Surface)
– Bottom Illumination
2xLVDS Input Data Bus
Supports 4K UHD at 60 Hz and Full HD at 240 Hz
LED Operation Supported by Two Dedicated
DLPC6421 Display Controllers, DLPA3005 Power
Management IC (PMIC), and LED Driver
The DLP470TP ecosystem includes established
resources to help the user accelerate the design
cycle, which include production ready optical
modules, optical module manufacturers, and design
houses.
2 Applications
•
•
•
•
•
•
Visit the Getting Started with TI DLP Pico™ display
technology page to learn more about how to start
designing with the DLP470TP DMD.
Mobile Smart TV
Mobile Projector
Digital Signage
Commercial Gaming
Smart Home Displays
Mobile Home Cinema
Device Information(1)
PART NUMBER
DLP470TP
PACKAGE
FQN (250)
BODY SIZE (NOM)
25.65 mm × 16.9 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic (LED Configuration)
DAD_CTRL
DAD_CTRL
3.3 V to 1.8 V
Translators
SCP_CTRL
DLPC6421
Display Controller
SCP_CTRL
C/D DMD DATA
C/D DMD DCLK
C/D DMD SCTRL
VOFFSET
VBIAS
I2C
SPI
VRESET
DLPA3005
1.8V
DLP470TP
DMD
PG_OFFSET
NC
1.8 V
DLPC6421
Display Controller
EN_OFFSET
A/B DMD DATA
A/B DMD DCLK
A/B DMD SCTRL
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DLP470TP
DLPS105A – JANUARY 2018 – REVISED MAY 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
Features .................................................................. 1
Applications ........................................................... 1
Description ............................................................. 1
Revision History..................................................... 2
Pin Configuration and Functions ......................... 3
Specifications....................................................... 10
6.1
6.2
6.3
6.4
6.5
6.6
6.7
Absolute Maximum Ratings .................................... 10
Storage Conditions.................................................. 10
ESD Ratings............................................................ 11
Recommended Operating Conditions..................... 11
Thermal Information ................................................ 14
Electrical Characteristics......................................... 15
Capacitance at Recommended Operating
Conditions ................................................................ 15
6.8 Timing Requirements .............................................. 16
6.9 System Mounting Interface Loads .......................... 20
6.10 Micromirror Array Physical Characteristics ........... 21
6.11 Micromirror Array Optical Characteristics ............. 22
6.12 Window Characteristics......................................... 24
6.13 Chipset Component Usage Specification ............. 24
7
Detailed Description ............................................ 25
7.1 Overview ................................................................. 25
7.2 Functional Block Diagram ....................................... 25
7.3 Feature Description.................................................
7.4 Device Functional Modes........................................
7.5 Optical Interface and System Image Quality
Considerations .........................................................
7.6 Micromirror Array Temperature Calculation............
7.7 Micromirror Landed-On/Landed-Off Duty Cycle .....
8
26
26
26
27
29
Application and Implementation ........................ 32
8.1 Application Information............................................ 32
8.2 Typical Application ................................................. 32
9
Power Supply Recommendations...................... 35
9.1 DMD Power Supply Power-Up Procedure .............. 35
9.2 DMD Power Supply Power-Down Procedure ......... 35
10 Layout................................................................... 37
10.1 Layout Guidelines ................................................. 37
10.2 Layout Example .................................................... 37
11 Device and Documentation Support ................. 39
11.1
11.2
11.3
11.4
11.5
11.6
Device Support......................................................
Documentation Support .......................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
39
40
40
40
40
40
12 Mechanical, Packaging, and Orderable
Information ........................................................... 41
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (January 2018) to Revision A
Page
•
Added tablenote describing the effects that DMD micromirror switching speed and DLP image processing
algorithms have on the micromirror pixel display in Table 2 ................................................................................................ 21
•
Added description of the effects that DMD micromirror switching speed and DLP image processing algorithms have
on the micromirror pixel display in Detailed Description....................................................................................................... 25
2
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DLPS105A – JANUARY 2018 – REVISED MAY 2018
5 Pin Configuration and Functions
FQN Package
250-Pin CLGA
Bottom View
T
R
P
N
M
L
K
J
H
G
F
E
D
C
B
A
3
1
2
5
4
7
6
9
8
11
10
13
12
15
14
17
16
19
18
21
20
23
22
25
24
CAUTION
Properly manage the layout and the operation of signals identified in the Pin
Functions table to make sure there is reliable, long-term operation of the .47” 4K
UHD S316 DMD. Refer to the PCB Design Requirements for TI DLP Pico TRP Digital
Micromirror Devices application report for specific details and guidelines before
designing the board.
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DLP470TP
DLPS105A – JANUARY 2018 – REVISED MAY 2018
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Pin Functions (1)
PIN
NAME
NO.
I/O (2)
SIGNAL
DATA
RATE
INTERNAL
TERMINATION
DESCRIPTION
TRACE
LENGTH
(mil)
D_AN(0)
B5
8987.47
D_AN(1)
B1
8979.19
D_AN(2)
B3
9213.84
D_AN(3)
F2
9390.87
D_AN(4)
D2
9541.45
D_AN(5)
D3
9270.74
D_AN(6)
C7
9020.02
D_AN(7)
B9
D_AN(8)
C9
D_AN(9)
D7
9382.75
D_AN(10)
B10
9068.69
D_AN(11)
B13
9045.89
D_AN(12)
C11
9466.24
D_AN(13)
D10
9097.42
D_AN(14)
C12
9097.42
D_AN(15)
I
LVDS
DDR
Differential
Data negative
9360.86
9057.9
D12
9424.03
D_AP(0)
B4
9087.54
D_AP(1)
C1
9079.61
D_AP(2)
B2
9314.29
D_AP(3)
F3
9504.25
D_AP(4)
E2
9658.59
D_AP(5)
D4
9364.6
D_AP(6)
C6
9120.22
D_AP(7)
B8
D_AP(8)
C8
I
LVDS
DDR
Differential
Data positive
9461.25
9158.06
D_AP(9)
D6
D_AP(10)
B11
9168.7
D_AP(11)
B12
9142.77
D_AP(12)
C10
9566.6
D_AP(13)
D9
9198.38
D_AP(14)
C13
9402.91
D_AP(15)
D13
9523.21
(1)
(2)
4
9483.72
The .47” 4K UHD TRP 2xLVDS series 316 DMD is a component of one or more DLP chipsets. Use the .47” 4K UHD TRP 2xLVDS
series 316 DMD in conjunction with other components of the applicable DLP chipset to make sure there is reliable operation. These
include components that contain or implement TI DMD control technology. TI DMD control technology consists of the TI technology and
devices used for operating or controlling a DLP DMD.
I = Input, O = Output, P = Power, G = Ground, NC = No connect.
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Pin Functions(1) (continued)
PIN
NAME
NO.
I/O (2)
SIGNAL
DATA
RATE
INTERNAL
TERMINATION
DESCRIPTION
TRACE
LENGTH
(mil)
D_BN(0)
R5
9106.93
D_BN(1)
R1
8960.73
D_BN(2)
P3
9107.05
D_BN(3)
T2
9067.95
D_BN(4)
N3
9480.88
D_BN(5)
N1
9850.03
D_BN(6)
P7
9062.46
D_BN(7)
R7
D_BN(8)
P9
I
LVDS
DDR
Differential
Data negative
9649.53
9371.31
D_BN(9)
N7
9405.19
D_BN(10)
R10
9068.69
D_BN(11)
R13
9054.9
D_BN(12)
P11
9454.71
D_BN(13)
N10
9097.42
D_BN(14)
P12
9372.51
D_BN(15)
N12
9437.45
D_BP(0)
R4
9213.71
D_BP(1)
P1
9067.86
D_BP(2)
R3
9205.54
D_BP(3)
R2
9176.89
D_BP(4)
M3
9599.54
D_BP(5)
N2
9944.11
D_BP(6)
P6
9169.37
D_BP(7)
R6
D_BP(8)
P8
D_BP(9)
N6
9512.86
D_BP(10)
R11
9161.97
D_BP(11)
R12
9158.49
D_BP(12)
P10
9559.89
D_BP(13)
N9
9205.09
D_BP(14)
P13
9466.61
D_BP(15)
N13
9529.92
I
LVDS
DDR
Differential
Data positive
9750.42
9478.18
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Pin Functions(1) (continued)
PIN
NAME
NO.
I/O (2)
SIGNAL
DATA
RATE
INTERNAL
TERMINATION
DESCRIPTION
TRACE
LENGTH
(mil)
D_CN(0)
C15
9413.25
D_CN(1)
C16
9034.49
D_CN(2)
D15
9524.65
D_CN(3)
C18
9029.15
D_CN(4)
B17
9047.75
D_CN(5)
D18
9029.56
D_CN(6)
B18
9364.61
D_CN(7)
D21
D_CN(8)
C20
I
LVDS
DDR
Differential
Data negative
9027.29
9114.49
D_CN(9)
B20
9009.02
D_CN(10)
C22
9051.66
D_CN(11)
C24
8992.11
D_CN(12)
B22
9016.3
D_CN(13)
A25
9151.66
D_CN(14)
D25
9170.16
D_CN(15)
A23
9034.48
D_CP(0)
C14
9505.23
D_CP(1)
C17
9147.8
D_CP(2)
D16
9643.83
D_CP(3)
C19
9129.78
D_CP(4)
B16
9134.27
D_CP(5)
D19
9134.02
D_CP(6)
B19
9465.07
D_CP(7)
D22
D_CP(8)
C21
D_CP(9)
B21
9126.11
D_CP(10)
C23
9152.86
D_CP(11)
D24
9092.44
D_CP(12)
B23
9140.94
D_CP(13)
B25
9251.97
D_CP(14)
E25
9270.5
D_CP(15)
A24
9140.97
6
I
LVDS
DDR
Differential
Data positive
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9127.74
9233.7
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Pin Functions(1) (continued)
PIN
NAME
NO.
I/O (2)
SIGNAL
DATA
RATE
INTERNAL
TERMINATION
DESCRIPTION
TRACE
LENGTH
(mil)
D_DN(0)
P15
9391.44
D_DN(1)
P16
9034.49
D_DN(2)
N15
9480.3
D_DN(3)
P18
8967.95
D_DN(4)
R17
9047.75
D_DN(5)
N18
9029.56
D_DN(6)
R18
9364.61
D_DN(7)
N21
D_DN(8)
P20
D_DN(9)
R20
9009.02
D_DN(10)
P22
9037.74
D_DN(11)
P24
8992.11
D_DN(12)
R22
8976.7
D_DN(13)
T25
9133.73
D_DN(14)
N25
9154.85
D_DN(15)
T23
9034.48
D_DP(0)
P14
9498.52
D_DP(1)
P17
9131.6
D_DP(2)
N16
9606.19
D_DP(3)
P19
9061.86
D_DP(4)
R16
9147.35
D_DP(5)
N19
9127.31
D_DP(6)
R19
9458.36
D_DP(7)
N22
D_DP(8)
P21
D_DP(9)
R21
9119.4
D_DP(10)
P23
9136.66
D_DP(11)
N24
9085.73
D_DP(12)
R23
9074.67
D_DP(13)
R25
9227.84
D_DP(14)
M25
9260.64
D_DP(15)
T24
9140.37
SCTRL_AN
E4
I
LVDS
DDR
Differential
Serial control negative
SCTRL_AP
F4
I
LVDS
DDR
Differential
Serial control positive
9551.5
SCTRL_BN
N4
I
LVDS
DDR
Differential
Serial control negative
9804.93
SCTRL_BP
M4
I
LVDS
DDR
Differential
Serial control positive
9894.56
SCTRL_CN
E23
I
LVDS
DDR
Differential
Serial control negative
9192.49
SCTRL_CP
F23
I
LVDS
DDR
Differential
Serial control positive
9292.66
SCTRL_DN
M23
I
LVDS
DDR
Differential
Serial control negative
9193.21
SCTRL_DP
L23
I
LVDS
DDR
Differential
Serial control positive
9286.68
DCLK_AN
C5
I
LVDS
Differential
Clock negative
9486.8
DCLK_AP
C4
I
LVDS
Differential
Clock positive
9587.94
DCLK_BN
P5
I
LVDS
Differential
Clock negative
9678.16
DCLK_BP
P4
I
LVDS
Differential
Clock positive
9786.01
DCLK_CN
E21
I
LVDS
Differential
Clock negative
9542.68
DCLK_CP
E22
I
LVDS
Differential
Clock positive
9642.8
I
I
LVDS
LVDS
DDR
DDR
Differential
Differential
9027.29
Data negative
9114.49
9121.03
Data positive
9226.99
9444.29
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Pin Functions(1) (continued)
PIN
NAME
NO.
I/O (2)
SIGNAL
DATA
RATE
INTERNAL
TERMINATION
DESCRIPTION
TRACE
LENGTH
(mil)
DCLK_DN
M21
I
LVDS
Differential
Clock negative
9542.68
DCLK_DP
M22
I
LVDS
Differential
Clock positive
9636.09
SCPCLK
B6
I
LVCMOS
Pull down
Serial communications port clock. Active only
when SCPENZ is logic low.
SCPDI
A7
I
LVCMOS
Pull down
Serial communications port data input.
Synchronous to SCPCLK rising edge.
SCPENZ
A8
I
LVCMOS
Pull down
Serial communications port enable active low.
SCPDO
B7
O
LVCMOS
RESET_ADDR(0)
T8
RESET_ADDR(1)
R9
RESET_ADDR(2)
T7
I
LVCMOS
Pull down
Reset driver address select
RESET_ADDR(3)
R8
RESET_MODE(0)
T5
I
LVCMOS
Pull down
Reset driver mode select
RESET_SEL(0)
T4
I
LVCMOS
Pull down
Reset driver level select
RESET_SEL(1)
L2
I
LVCMOS
Pull down
Reset driver level select
RESET_STROBE
L4
I
LVCMOS
Pull down
Rising edge latches in RESET_ADDR,
RESET_MODE, & RESET_SEL
PWRDNZ
A4
I
LVCMOS
Pull down
Active low device reset
RESET_OEZ
T14
I
LVCMOS
Pull up
Active low output enable for internal reset
driver circuits
RESET_IRQZ
R14
O
LVCMOS
Active low output interrupt to DLP display
controller
EN_OFFSET
C3
O
LVCMOS
Active high enable for external VOFFSET
regulator
PG_OFFSET
A2
I
LVCMOS
A16, B14,
E10, E11,
E12, E13,
E14, E15,
E16, E17,
M12, M13,
M14, M15,
K2, G2,
L24, F24,
M16, M17,
M18, E18
NC
A5
I
LVCMOS
VBIAS (3)
A19, A20,
T19, T20
P
Analog
Supply voltage for positive bias level of
micromirror reset signal.
VRESET (3)
A10, A11,
T10, T11
P
Analog
Supply voltage for negative reset level of
micromirror reset signal
VOFFSET (3)
A1, C25,
P25, T1,
T13
P
Analog
Supply voltage for HVCMOS logic. Supply
voltage for positive offset level of micromirror
reset signal. Supply voltage for stepped high
voltage at micromirror address electrodes.
NO CONNECT
SCP_TEST_MUX
(3)
8
SDR
SDR
Serial communications port output.
Pull up
Active low fault from external VOFFSET
regulator
Do not connect on DLP system board.
Pull down
Connect to ground on DLP system board
VBIAS, VCC, VOFFSET, and VRESET power supplies must be connected for proper DMD operation.
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Pin Functions(1) (continued)
PIN
NAME
NO.
I/O (2)
VCC (3)
A13, A14,
D1, E1,
F21, F22,
G3, G4,
G21, G22,
G23, H3,
H4, H21,
H22, H23,
J3, J4,
J21, J22,
J23, K3,
K4, K21,
K22, K23,
L21, L22,
M1, M2
P
VSS (4)
A3, A6,
A9, A12,
A15, A17,
A18,A21,
A22, B15,
B24, C2,
D5, D8,
D11, D14,
D17, D20,
D23, E3,
E24, L3,
M24, N5,
N8, N11,
N14, N17,
N20, N23,
P2, R15,
R24, T3,
T6, T9,
T12, T15,
T16, T17,
T18, T21,
T22
G
(4)
DATA
RATE
SIGNAL
INTERNAL
TERMINATION
DESCRIPTION
TRACE
LENGTH
(mil)
Supply voltage for LVCMOS core. Supply
voltage for positive offset level of micromirror
reset signal during Power down. Supply
voltage for normal high level at micromirror
address electrodes.
Analog
Device ground. Common return for all power.
VSS must be connected for proper DMD operation.
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
SUPPLY VOLTAGES
VCC
Supply voltage for LVCMOS core logic (2)
–0.5
2.3
V
VOFFSET
Supply voltage for HVCMOS and micromirror electrode (2) (3)
–0.5
11
V
VBIAS
Supply voltage for micromirror electrode (2)
–0.5
19
V
(2)
–15
VRESET
Supply voltage for micromirror electrode
–0.3
V
|VBIAS – VOFFSET|
Supply voltage difference (absolute value) (4)
11
V
|VBIAS – VRESET|
Supply voltage difference (absolute value) (5)
34
V
INPUT VOLTAGES
Input voltage for all other LVCMOS input pins (2)
VCC + 0.5
V
|VID|
Input differential voltage (absolute value) (6)
–0.5
500
mV
IID
Input differential current (7)
6.3
mA
ƒCLOCK
Clock frequency for LVDS interface, DCLK_A
400
MHz
ƒCLOCK
Clock frequency for LVDS interface, DCLK_B
400
MHz
ƒCLOCK
Clock frequency for LVDS interface, DCLK_C
400
MHz
ƒCLOCK
Clock frequency for LVDS interface, DCLK_D
400
MHz
CLOCKS
ENVIRONMENTAL
Temperature, operating (8)
–20
90
°C
Temperature, non–operating (8)
–40
90
°C
|TDELTA|
Absolute temperature delta between any point on the window edge and the
ceramic test point TP1 (9)
30
°C
TDP
Dew point temperature, operating and non–operating (noncondensing)
81
°C
TARRAY and
TWINDOW
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device is not implied at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure above or below the Recommended Operating Conditions for extended periods of time may affect device
reliability.
All voltages are referenced to the common ground VSS. Correct DMD operation requires VBIAS, VCC, VOFFSET, and VRESET power
supplies . VSS must also be connected.
VOFFSET supply transients must be within specified voltages.
Exceeding the recommended allowable voltage difference between VBIAS and VOFFSET may result in excessive current draw.
Exceeding the recommended allowable voltage difference between VBIAS and VRESET may result in excessive current draw.
This maximum LVDS input voltage rating applies when each input of a differential pair is at the same voltage potential.
LVDS differential inputs must not exceed the specified limit or damage may result to the internal termination resistors.
The highest temperature of the active array (as calculated using Micromirror Array Temperature Calculation) or of any point along the
window edge is defined in Figure 10. The highest window edge temperature is measured using the locations of thermal test points TP2,
TP3, TP4, and TP5 in Figure 10. If a particular application causes another point on the window edge to be at a higher temperature, use
that point.
Temperature delta is the largest difference between the ceramic test point 1 (TP1) and anywhere on the window edge as shown in
Figure 10. The window test points TP2, TP3, TP4, and TP5 shown in Figure 10 typically result in the worst case delta. If a particular
application causes another point on the window edge to result in a larger delta temperature, that point should be used.
6.2 Storage Conditions
Applicable to the DMD as a component or non-operating in a system
TDMD
DMD storage temperature
TDP-AVG
Average dew point temperature, non-condensing
TDP-ELR
(1)
(2)
10
MIN
MAX
–40
85
°C
24
°C
36
°C
(1)
Elevated dew point temperature range, non-condensing
(2)
28
UNIT
The average temperature over time (including storage and operating temperatures) that the device is not in the elevated dew point
temperature range.
Exposure to dew point temperatures in the elevated range during storage and operation should be limited to less than a total cumulative
time of CTELR.
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Storage Conditions (continued)
Applicable to the DMD as a component or non-operating in a system
MIN
CTELR
MAX
Cumulative time in elevated dew point temperature range
6
UNIT
months
6.3 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.4 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this
data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied
when operating the device above or below these limits.
MIN
NOM
MAX
UNIT
1.65
1.8
1.95
V
VOLTAGE SUPPLY
LVCMOS logic supply voltage (1)
VCC
(1) (2)
VOFFSET
Mirror electrode and HVCMOS voltage
9.5
10
10.5
V
VBIAS
Mirror electrode voltage (1)
17.5
18
18.5
V
VRESET
Mirror electrode voltage (1)
–14.5
–14
–13.5
V
|VBIAS –
VOFFSET|
Supply voltage difference (absolute value) (3)
10.5
V
(4)
33
V
0.7 × VCC
VCC + 0.3
V
–0.3
0.3 × VCC
V
0.8 × VCC
VCC + 0.3
V
–0.3
0.2 × VCC
|VBIAS – VRESET| Supply voltage difference (absolute value)
LVCMOS INTERFACE
VIH(DC)
DC input high voltage (5)
VIL(DC)
DC input low voltage (5)
VIH(AC)
AC input high voltage (5)
(5)
VIL(AC)
AC input low voltage
tPWRDNZ
PWRDNZ pulse duration (6)
10
V
ns
SCP INTERFACE
ƒSCPCLK
SCP clock frequency (7)
tSCP_PD
Propagation delay, clock to Q, from rising–edge of SCPCLK to valid
SCPDO (8)
0
tSCP_NEG_ENZ
Time between falling-edge of SCPENZ and the first rising-edge of
SCPCLK
1
µs
tSCP_POS_ENZ
Time between falling-edge of SCPCLK and the rising-edge of SCPENZ
1
µs
tSCP_DS
SCPDI clock setup time (before SCPCLK falling edge) (8)
800
ns
tSCP_DH
SCPDI hold time (after SCPCLK falling edge) (8)
900
ns
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
500
kHz
900
ns
All voltages reference common ground VSS. Correct DMD operation requires VBIAS, VCC, VOFFSET, and VRESET power supplies. VSS must
also be connected.
VOFFSET supply transient values must be below the specified maximum voltage.
To prevent excess current, the supply voltage difference |VBIAS – VOFFSET| must be less than specified limit. See Power Supply
Recommendations, Figure 14, and Table 8.
To prevent excess current, the supply voltage difference |VBIAS – VRESET| must be less than specified limit. See Power Supply
Recommendations, Figure 14, and Table 8.
Low-speed interface is LPSDR and adheres to the Electrical Characteristics and AC/DC Operating Conditions table in JEDEC Standard
No. 209B, “Low-Power Double Data Rate (LPDDR)” JESD209B. Tester conditions for VIH and VIL.
(a) Frequency = 60 MHz. Maximum rise time = 2.5 ns @ (20% - 80%)
(b) Frequency = 60 MHz. Maximum fall time = 2.5 ns @ (80% - 20%)
PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tristates the
SCPDO output pin.
The SCP clock is a gated clock. Duty cycle must be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
See Figure 2.
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Recommended Operating Conditions (continued)
Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this
data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied
when operating the device above or below these limits.
MIN
tSCP_PW_ENZ
12
SCPENZ inactive pulse duration (high level)
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NOM
MAX
UNIT
µs
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Recommended Operating Conditions (continued)
Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this
data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied
when operating the device above or below these limits.
MIN
NOM
MAX
UNIT
400
MHz
LVDS INTERFACE
ƒCLOCK
Clock frequency for LVDS interface (all channels), DCLK (9)
(10)
|VID|
Input differential voltage (absolute value)
VCM
Common mode voltage (10)
150
300
440
mV
1100
1200
1300
VLVDS
LVDS voltage (10)
mV
1520
mV
tLVDS_RSTZ
Time required for LVDS receivers to recover from PWRDNZ
ZIN
Internal differential termination resistance
80
100
2000
ns
120
ZLINE
Line differential impedance (PWB/trace)
90
100
Ω
110
Ω
0
40 to 70 (13)
°C
–20
–10
°C
Array temperature, short–term operational, 500 hr max (12) (15)
–10
0
°C
(12) (15)
70
880
ENVIRONMENTAL
Array temperature, long–term operational (11) (12) (13) (14)
TARRAY
Array temperature, short–term operational, 25 hr max
(12) (15)
75
°C
TWINDOW
Array temperature, short–term operational, 500 hr max
Window temperature – operational (16) (17)
85
°C
|TDELTA|
Absolute temperature delta between any point on the window edge and
the ceramic test point TP1 (18)
14
°C
TDP -AVG
Average dew point temperature (non–condensing) (19)
24
°C
TDP-ELR
Elevated dew point temperature range (non-condensing) (20)
CTELR
Cumulative time in elevated dew point temperature range
ILLUV
Illumination wavelengths < 400 nm (11)
ILLVIS
Illumination wavelengths between 400 nm and 700 nm
ILLIR
Illumination wavelengths > 700 nm
ILLθ
Illumination marginal ray angle
(17)
28
0.68
36
°C
6
months
2.00
mW/cm2
mW/cm2
Thermally limited
10
mW/cm2
55
degrees
(9) See LVDS timing requirements in Timing Requirements and Figure 6.
(10) See Figure 5 LVDS waveform requirements.
(11) Simultaneous exposure of the DMD to the maximum Recommended Operating Conditions for temperature and UV illumination reduces
device lifetime.
(12) The array temperature cannot be measured directly and must be computed analytically from the temperature measured at test point 1
(TP1) shown in Figure 10 and the package thermal resistance using the Micromirror Array Temperature Calculation.
(13) Per Figure 1, the maximum operational array temperature should be derated based on the micromirror landed duty cycle that the DMD
experiences in the end application. See Micromirror Landed-On/Landed-Off Duty Cycle for a definition of micromirror landed duty cycle.
(14) Long-term is defined as the useful life of the device.
(15) Short-term is the total cumulative time over the useful life of the device.
(16) The locations of thermal test points TP2, TP3, TP4, and TP5 shown in Figure 10 are intended to measure the highest window edge
temperature. For most applications, the locations shown are representative of the highest window edge temperature. If a particular
application causes additional points on the window edge to be at a higher temperature, test points should be added to those locations.
(17) The maximum marginal ray angle of the incoming illumination light at any point in the micromirror array, including pond of micromirrors
(POM), should not exceed 55 degrees from the normal to the device array plane. The device window aperture has not necessarily been
designed to allow incoming light at higher maximum angles to pass to the micromirrors, and the device performance has not been tested
nor qualified at angles exceeding this. Illumination light exceeding this angle outside the micromirror array (including POM) will
contribute to thermal limitations described in this document, and may negatively affect lifetime.
(18) Temperature delta is the highest difference between the ceramic test point 1 (TP1) and anywhere on the window edge as shown in
Figure 10. The window test points TP2, TP3, TP4, and TP5 shown in Figure 10 are intended to result in the worst case delta
temperature. If a particular application causes another point on the window edge to result in a larger delta in temperature, that point
should be used.
(19) The average over time (including storage and operating) that the device is not in the ‘elevated dew point temperature range'.
(20) Exposure to dew point temperatures in the elevated range during storage and operation should be limited to less than a total
cumulative time of CTELR.
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80
70
60
50
40
30
0/100
5/95
10/90
15/85
20/80
25/75
30/70
35/65
40/60
45/55 50/50
100/0
95/5
90/10
85/15
80/20
75/25
70/30
65/35
60/40
55/45
50/50
Micromirror Landed Duty Cycle
Figure 1. Maximum Recommended Array Temperature - Derating Curve
6.5 Thermal Information
DLP470TP
THERMAL METRIC
FQN Package
UNIT
250 PINS
Thermal resistance, active area to test point 1 (TP1) (1)
(1)
14
1.2
°C/W
The DMD is designed to conduct absorbed and dissipated heat to the back of the package. The cooling system must be capable of
maintaining the package within the temperature range specified in the Recommended Operating Conditions. The total heat load on the
DMD is largely driven by the incident light absorbed by the active area; although other contributions include light energy absorbed by the
window aperture and electrical power dissipation of the array. Optical systems should be designed to minimize the light energy falling
outside the window clear aperture since any additional thermal load in this area can significantly degrade the reliability of the device.
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6.6 Electrical Characteristics
Over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
0.8 × VCC
VOH
High level output voltage
VCC = 1.8 V, IOH = –2 mA
VOL
Low level output voltage
VCC = 1.95 V, IOL = 2 mA
IOZ
High impedance output current
VCC = 1.95 V
IIL
Low level input current
VCC = 1.95 V, VI = 0
(1) (2)
IIH
High level input current
ICC
Supply current VCC
IOFFSET
Supply current VOFFSET
(2)
(2) (3)
–40
0.2 × VCC
V
25
µA
–1
µA
110
µA
1290
mA
VOFFSET = 10.5 V
13.2
mA
VBIAS = 18.5 V
3.6
mA
VRESET = –14.5 V
–9
mA
2515.5
mW
138.6
mW
66.6
mW
130.5
mW
2851.2
mW
Supply current VBIAS
Supply current VRESET
PCC
Supply power dissipation VCC
VCC = 1.95 V
POFFSET
Supply power dissipation VOFFSET (2)
VOFFSET = 10.5 V
PBIAS
Supply power dissipation VBIAS (2) (3)
VBIAS = 18.5 V
PRESET
Supply power dissipation VRESET (3)
VRESET = –14.5 V
PTOTAL
Supply power dissipation VTOTAL
(3)
UNIT
VCC = 1.95 V
IRESET
(1)
(2)
MAX
V
VCC = 1.95 V, VI = VCC
IBIAS
(3)
TYP
Applies to LVCMOS pins only. Excludes LVDS pins and MBRST (15:0) pins.
To prevent excess current, the supply voltage difference |VBIAS – VOFFSET| must be less than the specified limits listed in the
Recommended Operating Conditions table.
To prevent excess current, the supply voltage difference |VBIAS – VRESET| must be less than the specified limit in Recommended
Operating Conditions.
6.7 Capacitance at Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CI_lvds
LVDS input capacitance 2× LVDS
ƒ = 1 MHz
20
pF
CI_nonlvds
Non-LVDS input capacitance 2× LVDS
ƒ = 1 MHz
20
pF
CI_tdiode
Temperature diode input capacitance
2× LVDS
ƒ = 1 MHz
30
pF
CO
Output capacitance
ƒ = 1 MHz
20
pF
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6.8 Timing Requirements
MIN
NOM
MAX
UNIT
SCP (1)
tr
Rise slew rate
20% to 80% reference points
1
3
V/ns
tf
Fall slew rate
80% to 20% reference points
1
3
V/ns
tr
Rise slew rate
20% to 80% reference points
0.7
1
V/ns
tf
Fall slew rate
80% to 20% reference points
0.7
1
V/ns
DCLK_A, LVDS pair
2.5
ns
DCLK_B, LVDS pair
2.5
ns
DCLK_C, LVDS pair
2.5
ns
LVDS
(2)
tC
Clock cycle
tW
Pulse duration
DCLK_D, LVDS pair
2.5
DCLK_A LVDS pair
1.19
1.25
ns
DCLK_B LVDS pair
1.19
1.25
ns
DCLK_C LVDS pair
1.19
1.25
ns
1.19
1.25
ns
DCLK_D LVDS pair
tSu
Setup time
th
Hold time
ns
D_A(15:0) before DCLK_A, LVDS pair
0.275
ns
D_B(15:0) before DCLK_B, LVDS pair
0.275
ns
D_C(15:0) before DCLK_C, LVDS pair
0.275
ns
D_D(15:0) before DCLK_D, LVDS pair
0.275
ns
SCTRL_A before DCLK_A, LVDS pair
0.275
ns
SCTRL_B before DCLK_B, LVDS pair
0.275
ns
SCTRL_C before DCLK_C, LVDS pair
0.275
ns
SCTRL_D before DCLK_D, LVDS pair
0.275
ns
D_A(15:0) after DCLK_A, LVDS pair
0.195
ns
D_B(15:0) after DCLK_B, LVDS pair
0.195
ns
D_C(15:0) after DCLK_C, LVDS pair
0.195
ns
D_D(15:0) after DCLK_D, LVDS pair
0.195
ns
SCTRL_A after DCLK_A, LVDS pair
0.195
ns
SCTRL_B after DCLK_B, LVDS pair
0.195
ns
SCTRL_C after DCLK_C, LVDS pair
0.195
ns
SCTRL_D after DCLK_D, LVDS pair
0.195
ns
LVDS (2)
tSKEW
Skew time
Channel B relative to channel A (3) (4), LVDS pair
–1.25
1.25
ns
tSKEW
Skew time
Channel D relative to channel C (5) (6), LVDS pair
–1.25
1.25
ns
(1)
(2)
(3)
(4)
(5)
(6)
16
See Figure 3 for rise time and fall time for SCP.
See Figure 5 for timing requirements for LVDS.
Channel A (Bus A) includes the following LVDS pairs: DCLK_AN and DCLK_AP, SCTRL_AN and SCTRL_AP, D_AN(15:0), and
D_AP(15:0).
Channel B (Bus B) includes the following LVDS pairs: DCLK_BN and DCLK_BP, SCTRL_BN and SCTRL_BP, D_BN(15:0), and
D_BP(15:0).
Channel C (Bus C) includes the following LVDS pairs: DCLK_CN and DCLK_CP, SCTRL_CN and SCTRL_CP, D_CN(15:0), and
D_CP(15:0).
Channel D (Bus D) includes the following LVDS pairs: DCLK_DN and DCLK_DP, SCTRL_DN and SCTRL_DP, D_DN(15:0), and
D_DP(15:0).
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SCPCLK falling±edge capture for SCPDI.
tSCP_NEG_ENZ
tSCP_POS_ENZ
SCPCLK rising±edge launch for SCPDO.
SCPENZ
50%
50%
xxx
xxx
tSCP_DS
tSCP_DH
x
SCPDI
DI
50%
50%
x
SCPCLK
tC
fSCPCLK = 1 / tC
50%
50%
xxx
xx
xxxxx
SCPDO
50%
50%
xx
xx
tSCP_PD
DO
xx
xx
50%
Figure 2. SCP Timing Requirements
Voltage (V)
See Recommended Operating Conditions for fSCPCLK, tSCP_DS, tSCP_DH, and tSCP_PD specifications.
VCC
0
tr.
tf.
Not to Scale
Time
Figure 3. SCP Requirements for Rise and Fall
See Timing Requirements for tr and tf specifications and conditions.
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Device pin
output under test
Tester channel
CLOAD
Figure 4. Test Load Circuit for Output Propagation Measurement
The tester pin electronics and its transmission line effects must be taken into account for output timing analysis.
System designers should use IBIS or other simulation tools to correlate the timing reference load to a system
environment.
Not to Scale
V LVDS max = V CM max + | 1/ 2 * V ID max |
tf
VCM
VID
tr
V LVDS min = V CM min ± | 1/ 2 * V ID max |
Figure 5. LVDS Waveform Requirements
See Recommended Operating Conditions for VCM, VID, and VLVDS specifications and conditions.
18
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tc
tw
tw
DCLK_P
DCLK_N
50%
th
th
tsu
tsu
D_P(?:0)
D_N(?:0)
50%
th
th
tsu
tsu
SCTRL_P
SCTRL_N
50%
tskew
tc
tw
tw
DCLK_P
DCLK_N
50%
th
th
tsu
tsu
D_P(?:0)
D_N(?:0)
50%
th
th
tsu
SCTRL_P
SCTRL_N
tsu
50%
Figure 6. Timing Requirements
See Timing Requirements for timing requirements and LVDS pairs per channel (bus) defining D_P(?:0) and
D_N(?:0).
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6.9 System Mounting Interface Loads
Table 1. System Mounting Interface Loads
MAX
UNIT
Thermal interface area (1)
PARAMETER
100
N
Electrical interface area (1)
245
N
(1)
MIN
NOM
Uniformly distributed within area shown in Figure 7.
Electrical Interface Area
Thermal Interface Area
Figure 7. System Mounting Interface Loads
20
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6.10 Micromirror Array Physical Characteristics
Table 2. Micromirror Array Physical Characteristics
PARAMETER DESCRIPTION
Number of active columns
Number of active rows
(1) (2)
(1) (2)
Micromirror (pixel) pitch
(1)
Micromirror active array width
(1)
Micromirror active array height
Micromirror active border
(1)
(2)
(3)
VALUE
UNIT
M
1920
micromirrors
N
1080
micromirrors
P
5.4
µm
Micromirror pitch × number of active columns
10.368
mm
Micromirror pitch × number of active rows
5.832
mm
Pond of micromirrors (POM)
20
micromirrors/side
(1)
(3)
See Figure 8.
The fast switching speed of the DMD micromirrors combined with advanced DLP image processing algorithms enables each micromirror
to display four distinct pixels on the screen during every frame, resulting in a full 3840 × 2160 pixel image being displayed.
The structure and qualities of the border around the active array includes a band of partially functional micromirrors referred to as the
Pond Of Micromirrors (POM). These micromirrors are structurally and/or electrically prevented from tilting toward the bright or ON state
but still require an electrical bias to tilt toward the OFF state.
0
1
2
3
M
M
M
M
±
±
±
±
4
3
2
1
Off-State
Light Path
0
1
2
3
Active Micromirror Array
NxP
M x N Micromirrors
N± 4
N± 3
N± 2
N± 1
MxP
P
Incident
Illumination
Light Path
P
P
Pond Of Micromirrors (POM) omitted for clarity.
Details omitted for clarity.
Not to scale.
P
Figure 8. Micromirror Array Physical Characteristics
Refer to section Micromirror Array Physical Characteristics table for M, N, and P specifications.
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6.11 Micromirror Array Optical Characteristics
Table 3. Micromirror Array Optical Characteristics
PARAMETER
Micromirror tilt angle
MIN
Micromirror tilt angle tolerance (2) (3) (4) (5)
Micromirror tilt direction (6) (7)
MAX
270
Landed OFF state
180
Typical performance
Typical performance
Adjacent micromirrors
Non-adjacent micromirrors
degrees
1.4
Landed ON state
Micromirror switching time (9)
UNIT
17
–1.4
Micromirror crossover time (8)
Number of out-of-specification micromirrors (10)
NOM
DMD landed state (1)
1
degrees
degrees
3
6
0
10
μs
micromirrors
(1)
(2)
(3)
(4)
Measured relative to the plane formed by the overall micromirror array.
Additional variation exists between the micromirror array and the package datums.
Represents the landed tilt angle variation relative to the nominal landed tilt angle.
Represents the variation that can occur between any two individual micromirrors, located on the same device or located on different
devices.
(5) For some applications, it is critical to account for the micromirror tilt angle variation in the overall system optical design. With some
system optical designs, the micromirror tilt angle variation within a device may result in perceivable non-uniformities in the light field
reflected from the micromirror array. With some system optical designs, the micromirror tilt angle variation between devices may result in
colorimetry variations, system efficiency variations or system contrast variations.
(6) When the micromirror array is landed (not parked), the tilt direction of each individual micromirror is dictated by the binary contents of
the CMOS memory cell associated with each individual micromirror. A binary value of 1 results in a micromirror landing in the ON state
direction. A binary value of 0 results in a micromirror landing in the OFF state direction.
(7) Micromirror tilt direction is measured as in a typical polar coordinate system: Measuring counter-clockwise from a 0° reference which is
aligned with the +X Cartesian axis.
(8) The time required for a micromirror to nominally transition from one landed state to the opposite landed state.
(9) The minimum time between successive transitions of a micromirror.
(10) An out-of-specification micromirror is defined as a micromirror that is unable to transition between the two landed states within the
specified micromirror switching time.
22
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Off State
Light Path
Not to scale.
0
1
2
3
M
M
M
M
±
±
±
±
Details omitted for clarity.
4
3
2
1
Border micromirrors omitted for clarity
0
1
2
3
Tilted Axis of
Pixel Rotation
Off-State
Landed Edge
On-State
Landed Edge
N± 4
N± 3
N± 2
N± 1
Incident
Illumination
Light Path
(1)
Pond of micromirrors (POM) omitted for clarity.
(2)
Refer to Micromirror Array Physical Characteristics table for M, N, and P specifications.
Figure 9. Micromirror Landed Orientation and Tilt
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6.12 Window Characteristics
Table 4. DMD Window Characteristics
DESCRIPTION (1)
MIN
Window material
Window refractive index
Window aperture
At wavelength 546.1 nm
1.5119
(3)
Window transmittance, single-pass
through both surfaces and glass
Minimum within the wavelength range 420 nm to
680 nm. Applies to all angles 0° to 30° AOI. (4)
97%
Window transmittance, single-pass
through both surfaces and glass
Average over the wavelength range 420 nm to 680
nm. Applies to all angles 30° to 45° AOI. (4)
97%
(4)
MAX
(2)
Illumination overfill
(1)
(2)
(3)
NOM
Corning Eagle XG
See
(2)
See
(3)
See Optical Interface and System Image Quality Considerations for more information.
See the package mechanical characteristics for details regarding the size and location of the window aperture.
The active area of the DLP470TP device is surrounded by an aperture on the inside of the DMD window surface that masks structures
of the DMD device assembly from normal view. The aperture is sized to anticipate several optical conditions. Overfill light illuminating
the area outside the active array can scatter and create adverse effects to the performance of an end application using the DMD. The
illumination optical system should be designed to limit light flux incident outside the active array to less than 10% of the average flux
level in the active area. Depending on the particular system's optical architecture and assembly tolerances, the amount of overfill light on
the outside of the active array may cause system performance degradation.
Angle of incidence (AOI) is the angle between an incident ray and the normal to a reflecting or refracting surface.
6.13 Chipset Component Usage Specification
Reliable function and operation of the DLP470TP DMD requires that it be used in conjunction with the other
components of the applicable DLP chipset, including those components that contain or implement TI DMD
control technology. TI DMD control technology consists of the TI technology and devices used for operating or
controlling a DLP DMD.
NOTE
TI assumes no responsibility for image quality artifacts or DMD failures caused by optical
system operating conditions exceeding limits described previously.
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7 Detailed Description
7.1 Overview
The DMD is a 0.47-inch diagonal spatial light modulator which consists of an array of highly reflective aluminum
micromirrors. The DMD is an electrical input, optical output micro-optical-electrical-mechanical system (MOEMS).
The fast switching speed of the DMD micromirrors combined with advanced DLP image processing algorithms
enables each micromirror to display four distinct pixels on the screen during every frame, resulting in a full 3840
× 2160 pixel image being displayed. The electrical interface is low voltage differential signaling (LVDS). The DMD
consists of a two-dimensional array of 1-bit CMOS memory cells. The array is organized in a grid of M memory
cell columns by N memory cell rows. Refer to the Functional Block Diagram. The positive or negative deflection
angle of the micromirrors can be individually controlled by changing the address voltage of underlying CMOS
addressing circuitry and micromirror reset signals (MBRST).
The DLP 0.47” 4K UHD chipset is comprised of the DLP470TP DMD, two DLPC6421 display controllers, the
DLPA3005 PMIC, and the LED driver. To ensure reliable operation, the DLP470TP DMD must always be used
with the DLP display controller and the PMIC specified in the chipset.
DATA_A
SCTRL_A
DCLK_A
VSS
VCC
VOFFSET
VRESET
VBIAS
MBRST
PWRDNZ
SCP
7.2 Functional Block Diagram
Channel A
Interface
Column Read & Write
Control
Bit Lines
Control
(0,0)
Voltage
Generators
Voltages
Word Lines
Micromirror Array
Row
Bit Lines
(M-1, N-1)
Column Read & Write
Control
Control
DATA_B
SCTRL_B
DCLK_B
VSS
VCC
VOFFSET
VRESET
VBIAS
MBRST
RESET_CTRL
Channel B
Interface
Channels C and D are not shown. For pin details on channels A, B, C, and D, refer to Pin Configuration and
Functions and LVDS interface section of Timing Requirements.
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7.3 Feature Description
7.3.1 Power Interface
The DMD requires 4 DC voltages: 1.8 V source, VOFFSET, VRESET, and VBIAS. In a typical LED-based system, 1.8
V is provided by a TPS54320 and the VOFFSET, VRESET, and VBIAS is managed by the DLPA3005 PMIC and LED
driver.
7.3.2 Timing
The data sheet provides timing at the device pin. For output timing analysis, the tester pin electronics and its
transmission line effects must be taken into account. Figure 4 shows an equivalent test load circuit for the output
under test. Timing reference loads are not intended to be precise representations of any particular system
environment or depiction of the actual load presented by a production test. System designers should use IBIS or
other simulation tools to correlate the timing reference load to a system environment. The load capacitance value
stated is only for characterization and measurement of AC timing signals. This load capacitance value does not
indicate the maximum load the device is capable of driving.
7.4 Device Functional Modes
DMD functional modes are controlled by the DLPC6421 display controller. See the DLPC6421 display controller
data sheet or contact a TI applications engineer.
7.5 Optical Interface and System Image Quality Considerations
TI assumes no responsibility for end-equipment optical performance. Achieving the desired end-equipment
optical performance involves making trade-offs between numerous component and system design parameters.
Optimizing system optical performance and image quality strongly relate to optical system design parameter
trades. Although it is not possible to anticipate every conceivable application, projector image quality and optical
performance is contingent on compliance to the optical system operating conditions described in the following
sections.
7.5.1 Numerical Aperture and Stray Light Control
The angle defined by the numerical aperture of the illumination and projection optics at the DMD optical area
should be the same. This angle should not exceed the nominal device micromirror tilt angle unless appropriate
apertures are added in the illumination and/or projection pupils to block out flat-state and stray light from the
projection lens. The micromirror tilt angle defines DMD capability to separate the "ON" optical path from any
other light path, including undesirable flat-state specular reflections from the DMD window, DMD border
structures, or other system surfaces near the DMD such as prism or lens surfaces. If the numerical aperture
exceeds the micromirror tilt angle, or if the projection numerical aperture angle is more than two degrees larger
than the illumination numerical aperture angle (and vice versa), contrast degradation and objectionable artifacts
in the display border and/or active area could occur.
7.5.2 Pupil Match
TI’s optical and image quality specifications assume that the exit pupil of the illumination optics is nominally
centered within 2° of the entrance pupil of the projection optics. Misalignment of pupils can create objectionable
artifacts in the display border and/or active area, which may require additional system apertures to control,
especially if the numerical aperture of the system exceeds the pixel tilt angle.
7.5.3 Illumination Overfill
The active area of the device is surrounded by an aperture on the inside DMD window surface that masks
structures of the DMD chip assembly from normal view, and is sized to anticipate several optical operating
conditions. Overfill light illuminating the window aperture can create artifacts from the edge of the window
aperture opening and other surface anomalies that may be visible on the screen. The illumination optical system
should be designed to limit light flux incident anywhere on the window aperture from exceeding approximately
10% of the average flux level in the active area. Depending on the particular system optical architecture, overfill
light may have to be further reduced below the suggested 10% level in order to be acceptable.
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7.6 Micromirror Array Temperature Calculation
Array
TP2
2X 7.37
TP4
TP5
2X 12.43
TP3
Window Edge
TP3 (TP2)
(4 surfaces)
TP4
TP5
TP1
5.45
12.43
TP1
Figure 10. DMD Thermal Test Points
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Micromirror Array Temperature Calculation (continued)
Micromirror array temperature cannot be measured directly, therefore it must be computed analytically from
measurement points on the outside of the package, the package thermal resistance, the electrical power, and the
illumination heat load. The relationship between array temperature and the reference ceramic temperature
(thermal test TP1 in Figure 10) is provided by the following equations:
TARRAY = TCERAMIC + (QARRAY × RARRAY-TO-CERAMIC)
QARRAY = QELECTRICAL + QILLUMINATION
where
•
•
•
•
•
•
•
•
TARRAY = Computed array temperature (°C)
TCERAMIC = Measured ceramic temperature (°C) (TP1 location)
RARRAY-TO-CERAMIC = Thermal resistance of package specified in Thermal Information from array to ceramic TP1
(°C/Watt)
QARRAY = Total (electrical + absorbed) DMD power on the array (Watts)
QELECTRICAL = Nominal electrical power
QILLUMINATION = (CL2W × SL)
CL2W = Conversion constant for screen lumens to power on DMD (Watts/Lumen)
SL = Measured screen Lumens
The electrical power dissipation of the DMD is variable and depends on the voltages, data rates, and operating
frequencies. A nominal electrical power dissipation to use when calculating array temperature is 1.3 W. The
absorbed power from the illumination source is variable and depends on the operating state of the micromirrors
and the intensity of the light source. The equations shown above are valid for a 1-chip DMD system with
projection efficiency from the DMD to the screen of 87%.
The conversion constant CL2W is calculated to be 0.00266 W/lm based on array characteristics. It assumes a
spectral efficiency of 300 lumens/Watt for the projected light and illumination distribution of 83.7% on the active
array, and 16.3% on the array border.
The sample calculation for a typical projection application is as follows:
SL = 1500 lm (measured)
TCERAMIC = 55.0°C (measured)
CL2W = 0.00266 W/lm
QELECTRICAL = 1.3 W
QARRAY = 1.3 W + (0.00266 W/lm × 1500 lm) = 5.29 W
TARRAY = 55.0°C + (5.29 W × 1.2°C/W) = 61.35°C
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7.7 Micromirror Landed-On/Landed-Off Duty Cycle
7.7.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
The micromirror landed-on/landed-off duty cycle (landed duty cycle) denotes the percentage of time that an
individual micromirror is landed in the ON state versus the amount of time the same micromirror is landed in the
OFF state.
For example, a landed duty cycle of 100/0 indicates that the referenced pixel is in the ON state 100% of the time
(and in the OFF state 0% of the time); whereas 0/100 would indicate that the pixel is in the OFF state 100% of
the time. Likewise, 50/50 indicates that the pixel is ON for 50% of the time (and OFF for 50% of the time).
Note that when assessing landed duty cycle, the time spent switching from one state (ON or OFF) to the other
state (OFF or ON) is considered negligible and is thus ignored.
Since a micromirror can only be landed in one state or the other (ON or OFF), the two numbers (percentages)
always add to 100.
7.7.2 Landed Duty Cycle and Useful Life of the DMD
Knowing the long-term average landed duty cycle (of the end product or application) is important because
subjecting all (or a portion) of the DMD micromirror array (also called the active array) to an asymmetric landed
duty cycle for a prolonged period of time can reduce the DMD useful life.
Note that it is the symmetry/asymmetry of the landed duty cycle that is of relevance. The symmetry of the landed
duty cycle is determined by how close the two numbers (percentages) are to being equal. For example, a landed
duty cycle of 50/50 is perfectly symmetrical whereas a landed duty cycle of 100/0 or 0/100 is perfectly
asymmetrical.
7.7.3 Landed Duty Cycle and Operational DMD Temperature
Operational DMD temperature and landed duty cycle interact to affect DMD useful life, and this interaction can be
exploited to reduce the impact that an asymmetrical landed duty cycle has on the DMD useful life. This is
quantified in the de-rating curve shown in Figure 1. The importance of this curve is that:
• All points along this curve represent the same useful life.
• All points above this curve represent lower useful life (and the further away from the curve, the lower the
useful life).
• All points below this curve represent higher useful life (and the further away from the curve, the higher the
useful life).
In practice, this curve specifies the maximum operating DMD temperature that the DMD should be operated at
for a given long-term average landed duty cycle.
7.7.4 Estimating the Long-Term Average Landed Duty Cycle of a Product or Application
During a given period of time, the landed duty cycle of a given pixel follows from the image content being
displayed by that pixel.
For example, in the simplest case, when displaying pure-white on a given pixel for a given time period, that pixel
operates under a 100/0 landed duty cycle during that time period. Likewise, when displaying pure-black, the pixel
operates under a 0/100 landed duty cycle.
Between the two extremes (ignoring for the moment color and any image processing that may be applied to an
incoming image), the landed duty cycle tracks one-to-one with the gray scale value, as shown in Table 5.
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Table 5. Grayscale Value and Landed Duty Cycle
GRAYSCALE VALUE
LANDED DUTY CYCLE
0%
0/100
10%
10/90
20%
20/80
30%
30/70
40%
40/60
50%
50/50
60%
60/40
70%
70/30
80%
80/20
90%
90/10
100%
100/0
Accounting for color rendition (but still ignoring image processing) requires knowing both the color intensity (from
0% to 100%) for each constituent primary color (red, green, and/or blue) for the given pixel as well as the color
cycle time for each primary color, where “color cycle time” is the total percentage of the frame time that a given
primary must be displayed in order to achieve the desired white point.
Use Equation 1 to calculate the landed duty cycle of a given pixel during a given time period
Landed Duty Cycle = (Red_Cycle_% × Red_Scale_Value) + (Green_Cycle_% × Green_Scale_Value) + (Blue_Cycle_%
× Blue_Scale_Value)
where
•
•
•
Red_Cycle_%, represents the percentage of the frame time that red is displayed to achieve the desired white
point
Green_Cycle_% represents the percentage of the frame time that green is displayed to achieve the desired
white point
Blue_Cycle_%, represents the percentage of the frame time that blue is displayed to achieve the desired white
point
(1)
For example, assume that the red, green, and blue color cycle times are 50%, 20%, and 30% respectively (in
order to achieve the desired white point), then the landed duty cycle for various combinations of red, green, blue
color intensities would be as shown in Table 6 and Table 7.
Table 6. Example Landed Duty Cycle for Full-Color,
Color Percentage
CYCLE PERCENTAGE
30
RED
GREEN
BLUE
50%
20%
30%
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Table 7. Example Landed Duty Cycle for Full-Color
SCALE VALUE
RED
GREEN
BLUE
LANDED DUTY
CYCLE
0%
0%
0%
0/100
100%
0%
0%
50/50
0%
100%
0%
20/80
0%
0%
100%
30/70
12%
0%
0%
6/94
0%
35%
0%
7/93
0%
0%
60%
18/82
100%
100%
0%
70/30
0%
100%
100%
50/50
100%
0%
100%
80/20
12%
35%
0%
13/87
0%
35%
60%
25/75
12%
0%
60%
24/76
100%
100%
100%
100/0
The last factor to account for in estimating the landed duty cycle is any applied image processing. Within the
DLPC6421 controllers, the gamma function affects the landed duty cycle.
Gamma is a power function of the form Output_Level = A × Input_LevelGamma, where A is a scaling factor that is
typically set to 1.
In the DLPC6421 controllers, gamma is applied to the incoming image data on a pixel-by-pixel basis. A typical
gamma factor is 2.2, which transforms the incoming data as shown in Figure 11.
100
90
Output Level (%)
80
Gamma = 2.2
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
Input Level (%)
70
80
90
100
D002
Figure 11. Example of Gamma = 2.2
From Figure 11, if the gray scale value of a given input pixel is 40% (before gamma is applied), then gray scale
value will be 13% after gamma is applied. Therefore, it can be seen that since gamma has a direct impact
displayed gray scale level of a pixel, it also has a direct impact on the landed duty cycle of a pixel.
Consideration must also be given to any image processing which occurs before the DLPC3439 controllers.
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8 Application and Implementation
NOTE
Information in the following application sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
Texas Instruments DLP technology is a micro-electro-mechanical systems (MEMS) technology that modulates
light using a digital micromirror device (DMD). The DMD is a spatial light modulator, which reflects incoming light
from an illumination source to one of two directions, towards the projection optics or collection optics. The new
TRP pixel with a higher tilt angle increases brightness performance and enables smaller system electronics for
size constrained applications. Typical applications using the DLP470TP include home cinema, digital signage,
smart home/appliances, low-latency gaming display, and mobile smart TV.
The most recent class of chipsets from Texas Instruments is based on a breakthrough micromirror technology,
called TRP. With a smaller pixel pitch of 5.4 µm and increased tilt angle of 17 degrees, TRP chipsets enable
higher resolution in a smaller form factor and enhanced image processing features while maintaining high optical
efficiency. DLP chipsets are a great fit for any system that requires high resolution and high brightness displays.
8.2 Typical Application
The DLP470TP DMD combined with two DLPC6421 digital controllers and a power management device provides
full 4K UHD resolution for bright, colorful display applications. See Figure 12, a block diagram showing the
system components needed along with the LED configuration of the DLP 0.47” 4K UHD chipset. The
components include the DLP470TP DMD, two DLPC6421 display controllers and the DLPA3005 PMIC and LED
driver.
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VIN
SYSPWR (12-20V)
DC
Reg
L5
1.8V
Reg
L4
1.1V
Reg
L3
PROJ_ON
FE CTRL
Bank 1
x2
Bank 2
x2
DDR3
DDR3
ADDR
DATA
ADDR
Flash
ADDR
1.8V
DATA
Vx1:
3840x2160 @ 60Hz
Vx1
Output:
1080P @240Hz
Ref Clk
OSC
1.1V@3A for DLPC6421s
[email protected] for DLPC6421s
2.5V (to front-end chip)
LDO#1
LDO#2
POSENSE
PWRGOOD
DLPC6421
Master
SYSPWR
VLED
RESETZ
INTZ
L1
Five
External
FETs
LED_SEL 2
DLPA3005
DATA
60 bit
(960+32)x1080@240Hz
L2
Field, H/V-Sync,
DE, CLK
OSC
HBT
JTAG
SPI I2C
RLIM Current Sense
VBIAS, VRST, VOFS
3
JTAG
2xLVDS West
(960x1080 @240Hz)
CLK and CTRL
DATA 60 bit
(960+32)x1080@240Hz
ASIC TPs 3
Test GPIO 3
SPI
Flash
VSPI
1.8V@3A for DMD and DLPC6421s
SPI Bus (Ctrl) 4
GPIO Lines
Config. Lines
FPGA
XC7A200T2FBG676C4525
23
1.1V
1.8V
3.3V
ASIC TPs 3
Test GPIO 3
Front End IC
DATA
16
Fan or a programmable
DC supply
DLPC6421
Slave
1.1V
1.8V
3.3V
POSENSE
PWRGOOD
2xLVDS East
(960x1080 @240Hz)
CLK and CTRL
3D L/R
.47UHD
Pico 4K
.47 4K
DMD
DMD
1.8V
DATA
ADDR
23
16
1.1V/1.1V_FIL
SYSPWR (12-20V)
DLP Chipset Components
3rd Party Components
1.15V/1.15V_FIL
FPGA
Voltages
Regulators
Flash
Actuator
Driver
1.5V/1.5V_FIL
2.5V/2.5V_FIL
3.3V
DDR_VTT
DDR_VREF
4-Position
Actuator
Figure 12. Typical 4K UHD LED Application Diagram
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8.2.1 Design Requirements
Other core components of the display system include an illumination source, an optical engine for the illumination
and projection optics, other electrical and mechanical components, and software. The type of illumination used
and desired brightness will have a major effect on the overall system design and size.
The DLP470TP is used as the core imaging device in the display system and contains a 0.47-inch array of
micromirrors. The DLPC6421 controller is the digital interface between the DMD and the rest of the system,
taking digital input from front end receiver and driving the DMD over a high speed interface. The DLPA3005
PMIC serves as a voltage regulator for the DMD, controller, and LED illumination functionality.
8.2.2 Detailed Design Procedure
For a complete DLP system, an optical module or light engine is required that contains the DLP470TP DMD,
associated illumination sources, optical elements, and necessary mechanical components.
To ensure reliable operation, the DLP470TP DMD must always be used with two DLPC6421 display controllers
and the DLPA3005 PMIC and LED driver. Refer to PCB Design Requirements for TI DLP Pico TRP Digital
Micromirror Devices for the DMD board design and manufacturing handling of the DMD sub assemblies.
8.2.3 Application Curves
The typical LED-current-to-luminance relationship when LED illumination is utilized is shown in Figure 13.
RELATIVE ILLUMINANCE LEVEL
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
LED CURRENT (A)
9
10
11
12
D001
Figure 13. Luminance vs. Current
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9 Power Supply Recommendations
The following power supplies are all required to operate the DMD:
• VSS
• VBIAS
• VCC
• VOFFSET
• VRESET
DMD power-up and power-down sequencing is strictly controlled by the DLP display controller.
CAUTION
For reliable operation of the DMD, the following power supply sequencing
requirements must be followed. Failure to adhere to any of the prescribed power-up
and power-down requirements may affect device reliability. See the DMD power supply
sequencing requirements in Figure 14.
VBIAS, VCC, VOFFSET, and VRESET power supplies must be coordinated during power-up
and power-down operations. Failure to meet any of the below requirements will result
in a significant reduction in the DMD reliability and lifetime. Common ground VSS must
also be connected.
9.1 DMD Power Supply Power-Up Procedure
•
•
•
•
•
During power-up, VCC must always start and settle before VOFFSET plus Delay1 specified in Table 8, VBIAS, and
VRESET voltages are applied to the DMD.
During power-up, it is a strict requirement that the voltage difference between VBIAS and VOFFSET must be
within the specified limit shown in Recommended Operating Conditions.
During power-up, there is no requirement for the relative timing of VRESET with respect to VBIAS.
Power supply slew rates during power-up are flexible, provided that the transient voltage levels follow the
requirements specified in Absolute Maximum Ratings, in Recommended Operating Conditions, and in
Figure 14.
During power-up, LVCMOS input pins must not be driven high until after VCC have settled at operating
voltages listed in Recommended Operating Conditions.
9.2 DMD Power Supply Power-Down Procedure
•
•
•
•
•
During power-down, VCC must be supplied until after VBIAS, VRESET, and VOFFSET are discharged to within the
specified limit of ground. See Table 8.
During power-down, it is a strict requirement that the voltage difference between VBIAS and VOFFSET must be
within the specified limit shown in Recommended Operating Conditions.
During power-down, there is no requirement for the relative timing of VRESET with respect to VBIAS.
Power supply slew rates during power-down are flexible, provided that the transient voltage levels follow the
requirements specified in Absolute Maximum Ratings, in Recommended Operating Conditions, and in
Figure 14.
During power-down, LVCMOS input pins must be less than specified in Recommended Operating Conditions.
Table 8. DMD Power-Supply Requirements
PARAMETER
Delay1
(1)
Delay2 (1)
(1)
DESCRIPTION
Delay from VOFFSET settled at recommended operating voltage to
VBIAS and VRESET power up
PG_OFFSET hold time after EN_OFFSET goes low
MIN
NOM
1
2
MAX
100
UNIT
ms
ns
See Figure 14.
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Not to scale. Details omitted for clarity
Note 1
VCC
VSS
VOFFSET
Note 4
Delay 1
Note 2
ûV < Specification
VSS
VBIAS
VSS
Note 3
ûV < Specification
VRESET
VSS
EN_OFFSET
VSS
Note 9
Delay 2
PG_OFFSET
Note 5
Note 7
VSS
RESET_OEZ
VSS
Note 6
Note 8
PWRDNZ
and RESETZ
VSS
(1)
See Recommended Operating Conditions and the pin functions table.
(2)
To prevent excess current, the supply voltage difference |VOFFSET – VBIAS| must be less than the specified limit in
Recommended Operating Conditions.
(3)
To prevent excess current, the supply difference |VBIAS – VRESET| must be less than the specified limit in the
Recommended Operating Conditions.
(4)
VBIAS should power up after VOFFSET has powered up, per the Delay1 specification in Table 8.
(5)
PG_OFFSET should turn off after EN_OFFSET has turned off, per the Delay2 specification in Table 8.
(6)
DLP controller software enables the DMD power supplies to turn on after RESET_OEZ is at logic high.
(7)
DLP controller software initiates the global VBIAS command.
(8)
After the DMD micromirror park sequence is complete, the DLP controller software initiates a hardware power-down
that activates PWRDNZ and disables VBIAS, VRESET and VOFFSET.
(9)
Under power-loss conditions where emergency DMD micromirror park procedures are being enacted by the DLP
controller hardware, EN_OFFSET may turn off after PG_OFFSET has turned off. The OEZ signal goes high prior to
PG_OFFSET turning off to indicate the DMD micromirror has completed the emergency park procedures.
Figure 14. DMD Power Supply Requirements
36
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10 Layout
10.1 Layout Guidelines
The DLP470TP DMD is part of a chipset that is controlled by two DLPC6421 display controllers in conjunction
with the DLPA3005 PMIC and LED driver. These guidelines are targeted at designing a PCB board with the
DLP470TP DMD. The DLP470TP DMD board is a high-speed multi-layer PCB, with primarily high-speed digital
logic utilizing dual edge clock rates up to 400 MHz for DMD LVDS signals. The remaining traces are comprised
of low speed digital LVTTL signals. TI recommends that mini power planes are used for VOFFSET, VRESET, and
VBIAS. Solid planes are required for ground (VSS). The target impedance for the PCB is 50 Ω ±10% with the LVDS
traces being 100 Ω ±10% differential. TI recommends using an 8 layer stack-up as described in Table 9.
10.2 Layout Example
10.2.1 Layers
The layer stack-up and copper weight for each layer is shown in Table 9. Small sub-planes are allowed on signal
routing layers to connect components to major sub-planes on top/bottom layers if necessary.
Table 9. Layer Stack-Up
LAYER
NO.
COPPER WT.
(oz.)
LAYER NAME
COMMENTS
1
Side A - DMD only
1.5
DMD, escapes, low frequency signals, power sub-planes
2
Ground
0.5
Solid ground plane (net GND)
3
Signal
0.5
50 Ω and 100 Ω differential signals
4
Signal/Power
0.5
50 Ω and 100 Ω differential signals / power
5
Ground
0.5
Solid ground plane (net GND)
6
Signal
0.5
50 Ω and 100 Ω differential signals
7
Ground
0.5
Solid ground plane (net GND)
8
Side B - All other Components
1.5
Discrete components, low frequency signals, power sub-planes
10.2.2 Impedance Requirements
TI recommends that the board has a matched impedance of 50 Ω ±10% for all signals. The exceptions are listed
in Table 10.
Table 10. Special Impedance Requirements
Signal Type
Signal Name
Impedance (ohms)
DDxP(0:15), DDxN(0:15)
A, B, C, and D channel LVDS
differential pairs
DCLKx_P, DCLKx_N
100 ±10% differential across
each pair
SCTRL_CP, SCTRL_CN
10.2.3 Trace Width, Spacing
Unless otherwise specified, TI recommends that all signals follow the 0.005”/0.005” design rule. Minimum trace
clearance from the ground ring around the PWB has a 0.1” minimum. An analysis of impedance and stack-up
requirements determine the actual trace widths and clearances.
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37
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www.ti.com
10.2.3.1 Voltage Signals
Table 11. Special Trace Widths, Spacing Requirements
SIGNAL NAME
MINIMUM TRACE WIDTH TO
PINS (MIL)
LAYOUT REQUIREMENT
VSS
15
Maximize trace width to connecting pin
VCC
15
Maximize trace width to connecting pin
VOFFSET
15
Create mini plane to DMD
VRESET
15
Create mini plane to DMD
VBIAS
15
Create mini plane to DMD
38
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Device Nomenclature
DLP470TP FQN
Package Type
Device Descriptor
Figure 15. Part Number Description
11.1.2 Device Markings
The device marking includes both human-readable information and a 2-dimensional matrix code. The humanreadable information is described in Figure 16 and includes the legible character string GHJJJJK 1910-50BBM.
GHJJJJK is the lot trace code and 1910-50BBM is the device marking.
Example: GHJJJJK 1910-50BBM
GHJJJJK
*1910-5bbcM
Two-Dimensional Matrix Code
(Part Number and Lot Trace Code)
DMD Part Number
Lot Trace Code
Figure 16. DMD Marking Locations
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11.2 Documentation Support
11.2.1 Related Documentation
The following documents contain additional information related to the chipset components used with the
DLP470TP.
• DLPC6421 Display Controller Data Sheet
• DLPA3005 PMIC/LED Driver Data Sheet
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 Trademarks
Pico, E2E are trademarks of Texas Instruments.
DLP is a registered trademark of Texas Instruments.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
40
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DLPS105A – JANUARY 2018 – REVISED MAY 2018
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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41
PACKAGE OPTION ADDENDUM
www.ti.com
2-Jun-2018
PACKAGING INFORMATION
Orderable Device
Status
(1)
DLP470TPFQN
ACTIVE
Package Type Package Pins Package
Drawing
Qty
CLGA
FQN
250
54
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
RoHS & Green
Call TI
N / A for Pkg Type
Op Temp (°C)
Device Marking
(4/5)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
8
5
6
7
3
4
C
NOTES UNLESS OTHERWISE SPECIFIED:
COPYRIGHT 2016 TEXAS INSTRUMENTS
UN-PUBLISHED, ALL RIGHTS RESERVED. REV
A
B
C
D
1 DIE PARALLELISM TOLERANCE APPLIES TO DMD ACTIVE ARRAY ONLY.
2 ROTATION ANGLE OF DMD ACTIVE ARRAY IS A REFINEMENT OF THE LOCATION
TOLERANCE AND HAS A MAXIMUM ALLOWED VALUE OF 0.6 DEGREES.
3 BOUNDARY MIRRORS SURROUNDING THE DMD ACTIVE ARRAY.
D
4
+0.1
0.104 0.2
4 NOTCH DIMENSIONS ARE DEFINED BY UPPERMOST LAYERS OF CERAMIC,
AS SHOWN IN SECTION A-A.
2515301
DWG NO.
1
1
REVISIONS
ECO
ECO
ECO
ECO
2162276:
2167828:
2168706:
2169456:
DESCRIPTION
INITIAL RELEASE
CORRECT BACK SIDE MARKING; WAS 227-X
ADD APERTURE SLOTS PICTORIALLY
RELAX DIE PARALLELISM, WAS 0.038
DATE
11/14/2016
7/24/2017
9/14/2017
10/6/2017
BY
BMH
BMH
BMH
BMH
(1.3)
24.454 0.1
(OFF-STATE
DIRECTION)
SH
4X (R0.2)
5 ENCAPSULANT TO BE CONTAINED WITHIN DIMENSIONS SHOWN IN VIEW D
(SHEET 3). NO ENCAPSULANT IS ALLOWED ON TOP OF THE WINDOW.
D
4
6 ENCAPSULANT NOT TO EXCEED THE HEIGHT OF THE WINDOW.
7 SEE DETAIL B FOR "V-NOTCH" DIMENSIONS.
8 WHILE ONLY THE THREE DATUM A TARGET AREAS A1, A2, AND A3 ARE USED
FOR MEASUREMENT, ALL 4 CORNERS SHOULD BE CONTACTED, INCLUDING E1,
TO SUPPORT MECHANICAL LOADS.
FRONT SIDE
INDEX MARK
7
4
B
2.5
2X R0.4 0.1
(1.25)
+0.3
16.9 0.1
C
4
4
2X 3 0.075
C
C
1.5
4
A
45° 1°
A
4
R1 0.1
+0.2
8.45 - 0.1
(3)
4
+0.2
6.95 - 0.1
4
45° 1°
DETAIL B
V-NOTCH
B
2X ENCAPSULANT
(ILLUMINATION
DIRECTION)
+0.3
25.65 0.1
B
5 6
SCALE 30 : 1
1.403 0.077

(3)
A
0.042 A
0.02 D
ACTIVE ARRAY
0.78 0.063
H
(SHEET 3)
0 MIN TYP
UNLESS OTHERWISE SPECIFIED
DIMENSIONS ARE IN MILLIMETERS
TOLERANCES:
SECTION A-A
(ROTATED 90°)
0314DA
THIRD ANGLE
PROJECTION
NEXT ASSY
USED ON
8
7
6
5
4
B. HASKETT
11/14/2016
DATE
ENGINEER
TEXAS
INSTRUMENTS
11/14/2016
Dallas Texas
DRAWN
ANGLES 1
B. HASKETT
2 PLACE DECIMALS 0.25
QA/CE
1 PLACE DECIMALS 0.50
DIMENSIONAL LIMITS APPLY BEFORE PROCESSES
INTERPRET DIMENSIONS IN ACCORDANCE WITH ASME
Y14.5M-1994
REMOVE ALL BURRS AND SHARP EDGES
PARENTHETICAL INFORMATION FOR REFERENCE ONLY
P. KONRAD
CM
3
TITLE
11/14/2016
S. SUSI
11/15/2016
M. DORAK
11/17/2016
SIZE
APPROVED
11/16/2016
SCALE
R. LONG
APPLICATION
INV11-2006a
3 SURFACES INDICATED
IN VIEW B (SHEET 2)
8
1.925 0.1
H
(SHEET 3)
0.35 MIN TYP
A
D
(2.183)
1 8
4
1.1 0.05
2
A
ICD, MECHANICAL, DMD,
.47 4K SERIES 316
(FQN PACKAGE)
REV
DWG NO
D
D
2515301
15:1
SHEET
1
1
OF
5
8
6
7
5
4
3
DWG NO.
2515301
SH
1
2
D
D
2X 1.604
4X (1.5)
2X 22.65
A3
4X (5)
A2
C
C
2X 3.45
2.5
2X 3.45
1.5
C
B
B
B
8
E1
A1
VIEW C
DATUMS A AND E
(FROM SHEET 1)
A
A
TEXAS
INSTRUMENTS
Dallas Texas
INV11-2006a
8
7
6
5
4
3
DRAWN
B. HASKETT
DATE
11/14/2016
SIZE
D
SCALE
2
DWG NO
REV
2515301
SHEET
1
2
OF
D
5
8
6
7
5
3
4
2515301
DWG NO.
SH
1
3
D
D
2X 2.374
2X 21.11
C
C
1.5
C
2.5
B
6
2X 0 MIN
B
B
VIEW D
ENCAPSULANT MAXIMUM X/Y DIMENSIONS
(FROM SHEET 1)
VIEW E
MAXIMUM ENCAPSULANT HEIGHT
5
6
A
A
TEXAS
INSTRUMENTS
Dallas Texas
INV11-2006a
8
7
6
5
4
3
DRAWN
B. HASKETT
DATE
11/14/2016
SIZE
D
SCALE
2
DWG NO
REV
2515301
SHEET
1
3
OF
D
5
8
5
6
7
3
4
DWG NO.
2515301
SH
1
4
D
D
(0.068) TYP.
(42°) TYP.
2
(10.368)
ACTIVE ARRAY
7.354 0.075
4X (0.108)

3
(OFF-STATE
DIRECTION)
(0.075) TYP.
F
1.67 0.05
DETAIL F
APERTURE TOP EDGE
0.555 0.0635
SCALE 60 : 1

C
C
2
3.998 0.075
(11.336)
WINDOW
(5.832)
ACTIVE ARRAY
9.666 0.05
8.443 0.0635
2.5
1.5
(8.998)
APERTURE
C
B
(42°) TYP.
(42°) TYP.


G
(0.068) TYP.
B
B
(0.15) TYP.
DETAIL G
APERTURE BOTTOM EDGE
(ILLUMINATION
DIRECTION)
1.454
±0.0635
SCALE 60 : 1
11.604 0.0635
(13.058) APERTURE
3.405 0.05
14.555 0.05
(17.96) WINDOW
VIEW E
WINDOW AND ACTIVE ARRAY
A
A
(FROM SHEET 1)
TEXAS
INSTRUMENTS
Dallas Texas
INV11-2006a
8
7
6
5
4
3
DRAWN
B. HASKETT
DATE
11/14/2016
SIZE
D
SCALE
2
DWG NO
REV
2515301
SHEET
1
4
OF
D
5
8
5
6
7
3
4
DWG NO.
2515301
SH
1
5
D
D
0.929
24 X 1 = 24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
T
R
P
C
C
N
7.5
M
L
K
1.5
J
15 X 1
= 15
C
H
2.5
G
B
F
BACK SIDE
INDEX MARK
B
20X CIRCULAR TEST PADS
(0.75)
E
B
D
C
B
A
SYMBOLIZATION PAD
(7 X 3)
250X SQUARE LGA PADS
0.75±0.05 X 0.75±0.05
0.2 A B C

0.1 A
VIEW H-H
BACK SIDE METALLIZATION
(FROM SHEET 1)
A
A
TEXAS
INSTRUMENTS
Dallas Texas
INV11-2006a
8
7
6
5
4
3
DRAWN
B. HASKETT
DATE
11/14/2016
SIZE
D
SCALE
2
DWG NO
REV
2515301
SHEET
1
5
OF
D
5
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