AOL1240 40V N-Channel MOSFET General Description Product Summary The AOL1240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 40V 69A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3mΩ RDS(ON) (at VGS =4.5V) < 4.4mΩ 100% UIS Tested 100% Rg Tested Top View D UltraSO-8TM Bottom View D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 400 19 IDSM TA=70°C ±20 54 IDM TA=25°C Units V 69 ID TC=100°C Maximum 40 A 15 Avalanche Current C IAS, IAR 65 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 211 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 0: Sep. 2011 2.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s W 62.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 125 PD -55 to 175 Typ 20 50 1 °C Max 25 60 1.2 Units °C/W °C/W °C/W Page 1 of 6 AOL1240 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 40 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 400 Units V VDS=40V, VGS=0V VGS(th) 100 nA 1.8 2.3 V 2.4 3 3.75 4.7 VGS=4.5V, ID=20A 3.2 4.4 mΩ 90 1 V 69 A VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance A 0.68 mΩ S 2530 3165 3800 pF 640 920 1120 pF 13.5 45.5 77.5 pF 0.5 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33.5 42 50.5 nC Qg(4.5V) Total Gate Charge 12.5 18 23.5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 8 nC 3.5 nC 9 ns 3.5 ns 32 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 20.5 27 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 40 56 73 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep. 2011 www.aosmd.com Page 2 of 6 AOL1240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 100 3.5V VDS=5V 4V 100 80 4.5V 80 ID(A) ID (A) 60 60 VGS=3V 125°C 40 40 25°C 20 20 0 0 0 1 2 3 4 1 5 6 3 4 5 Normalized On-Resistance 2 5 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 VGS=4.5V 3 2 VGS=10V 1 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 6 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOL1240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=20V ID=20A 4000 Ciss 3500 Capacitance (pF) VGS (Volts) 8 6 4 3000 2500 Coss 2000 1500 1000 2 Crss 500 0 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 45 0 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 400 1000.0 RDS(ON) limited 10µs 350 100µs 300 1ms 10ms 250 10µs 10.0 DC 1.0 TJ(Max)=175°C TC=25°C Power (W) 100.0 ID (Amps) 5 TJ(Max)=175°C TC=25°C 17 5 2 10 200 150 100 0.1 50 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 100 0 Pulse Width (s) 18Junction-to-Case Figure 10: Single Pulse Power Rating (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.2°C/W 1 PD 0.1 Ton Single Pulse T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep. 2011 www.aosmd.com Page 4 of 6 AOL1240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 TA=25°C 120 TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 100 100 TA=150°C TA=125°C 10 80 60 40 20 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 80 10000 60 1000 50 175 Power (W) Current rating ID(A) TA=25°C 40 17 5 2 10 100 10 20 1 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 1E-05 175 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Sep. 2011 www.aosmd.com Page 5 of 6 AOL1240 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Sep. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6