FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –5 A, –20 V, Applications • Low gate charge • • High performance trench technology for extremely low RDS(ON) • Extended VGSS range (±12V) for battery applications Load switch • Motor drive • DC/DC conversion • Power management • High power and current handling capability DD1 DD1 D2 D RDS(ON) = 55 mΩ @ VGS = –4.5 V RDS(ON) = 90 mΩ @ VGS = –2.5 V 5 DD2 6 4 3 Q1 7 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G 1 S Absolute Maximum Ratings Symbol 8 S 2 Q2 TA=25oC unless otherwise noted Ratings Units Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current –5 A VDSS Parameter – Continuous (Note 1a) –30 – Pulsed PD Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 0.9 –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 78 °C/W (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 9933 FDS9933 13’’ 12mm 2500 units 2006 Fairchild Semiconductor International FDS9933 Rev C FDS9933 September 2006 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –12 mV/°C Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = –250 µA VDS = –16 V, VGS = 0 V –1 µA Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA On Characteristics –20 ID = –250 µA, Referenced to 25°C V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) ID = –250 µA, Referenced to 25°C 3 VGS = –4.5 V, VGS = –2.5 V, VGS = –4.5 V, ID = –3.2 A ID = –1.0 A VDS = –5 V 44 72 ID(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current gFS Forward Transconductance VDS = –9 V, ID = –3.4 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, –0.6 –0.8 –1.2 V mV/°C 55 90 mΩ –16 A 8 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) 825 pF 420 pF 150 pF (Note 2) Turn–On Delay Time VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 16 40 ns ns tr Turn–On Rise Time 46 80 td(off) Turn–Off Delay Time 40 70 ns tf Turn–Off Fall Time 25 40 ns Qg Total Gate Charge 10 20 Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –6 V, VGS = –4.5 V ID = –3.2A, nC 2.1 nC 3.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.0 A (Note 2) –0.7 –2.0 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9933 Rev C FDS9933 Electrical Characteristics FDS9933 Typical Characteristics: 1.8 30 -4.0V V 20 VGS=-2.5V -3.5V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V -3.0V -2.5V 10 -2.0V 0 1.6 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 1. On-Region Characteristics. 6 12 18 -ID, DRAIN CURRENT (A) 24 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.5A ID = -5A VGS = -4.5V 1.3 1.2 1.1 1 0.9 0.1 0.08 o TA = 125 C 0.06 TA = 25oC 0.04 0.02 0.8 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 0 150 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 30 VGS =0V o 125 C -IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = -5V 25 -ID, DRAIN CURRENT (A) 0.12 25oC 20 15 10 5 10 1 o TA = 125 C 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.4 0.8 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9933 Rev C FDS9933 Typical Characteristics: 1600 ID = -5A VDS = -4V f = 1 MHz VGS = 0 V -8V 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -6V 3 2 1200 Ciss 800 Coss 400 1 Crss 0 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 Figure 7. Gate Charge Characteristics. 20 Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 100 100µs RDS(ON) LIMIT 1ms 10ms 10 100ms 1s 10s 1 DC VGS = -4.5V SINGLE PULSE RθJA = 135oC/W 0.1 o TA = 25 C 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 RθJA = 135 C/W 0.1 o 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9933 Rev C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20