Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS(ON) ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. Features *Lower Gate Charge *Small Package Outline *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings -30 ±20 -4.1 -3.5 -20 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. G3407 Page: 1/4 CORPORATION Electrical Characteristics (Tj = 25 Parameter ISSUED DATE :2007/01/15 REVISED DATE : unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA gfs - 8.2 - S VDS=-5V, ID=-4A IGSS - - ±100 nA VGS= ±20V - - -1 uA VDS=-30V, VGS=0 - - -5 uA VDS=-24V, VGS=0 - - 52 - - 87 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance IDSS RDS(ON) m Test Conditions VGS=-10V, ID=-4.1A VGS=-4.5V, ID=-3.0A Total Gate Charge2 Qg - 7 - Gate-Source Charge Qgs - 3.1 - Gate-Drain (“Miller”) Change Qgd - 3 - Td(on) - 8.6 - Tr - 5 - Td(off) - 28.2 - Tf - 13.5 - Input Capacitance Ciss - 700 840 Output Capacitance Coss - 120 - Reverse Transfer Capacitance Crss - 75 - Rg - 10 - Symbol Min. Typ. Max. Unit VSD - - -1.0 V IS=-1.0A, VGS=0V Reverse Recovery Time Trr - 27 - ns Reverse Recovery Charge Qrr - 15 - nC IS=-4A, VGS=0V dI/dt=100A/ s Continuous Source Current (Body Diode) IS - - -2.2 A 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Resistance nC ID=-4A VDS=-15V VGS=-4.5V ns VDS=-15V VGS=-10V RG=3 RL=3.6 pF VGS=0V VDS=-15V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions VD=VG=0V, VS=-1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 270 /W when mounted on Min. copper pad. G3407 Page: 2/4 CORPORATION ISSUED DATE :2007/01/15 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 5. On-Resistance v.s. Gate-Source Voltage G3407 Fig 6. Body Diode Characteristics Page: 3/4 CORPORATION Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics ISSUED DATE :2007/01/15 REVISED DATE : Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G3407 Page: 4/4