Integral IN74HC374ADW Octal 3-state noninverting d flip-flop (high-performance silicon-gate cmos) Datasheet

TECHNICAL DATA
IN74HC374A
Octal 3-State
Noninverting D Flip-Flop
High-Performance Silicon-Gate CMOS
The IN74HC374A is identical in pinout to the LS/ALS374. The
device inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LS/ALSTTL outputs.
Data meeting the setup and hold time is clocked to the outputs with
the rising edge of the Clock. The Output Enable input does not affect
the states of the flip-flops, but when Output Enable is high, the outputs
are forced to the high-impedance state; thus, data may be stored even
when the outputs are not enabled.
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
IN74HC374AN Plastic
IN74HC374ADW SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
PIN 20=VCC
PIN 10 = GND
Inputs
Output
Enable
D
Q
L
H
H
L
L
L
X
no
change
X
Z
L
H
Clock
L,H,
X
X = don’t care
Z = high impedance
376
Output
IN74HC374A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
-0.5 to +7.0
V
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
-1.5 to VCC +1.5
V
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
DC Input Current, per Pin
±20
mA
IOUT
DC Output Current, per Pin
±35
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
-65 to +150
°C
260
°C
VOUT
IIN
Tstg
TL
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN, VOUT
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
VCC =2.0 V
VCC =4.5 V
VCC =6.0 V
Min
Max
Unit
2.0
6.0
V
0
VCC
V
-55
+125
°C
0
0
0
1000
500
400
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range
GND≤(VIN or VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC).
Unused outputs must be left open.
377
IN74HC374A
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
VCC
V
25 °C
to
-55°C
≤85
°C
≤125
°C
Unit
VOUT=0.1 V or VCC-0.1 V
IOUT≤ 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
Maximum Low Level Input Voltage
VOUT=0.1 V or VCC-0.1 V
IOUT ≤ 20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
Minimum High-Level
Output Voltage
VIN=VIH or VIL
IOUT ≤ 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
VIN=VIH or VIL
IOUT ≤ 6.0 mA
IOUT ≤ 7.8 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
VIN= VIL or VIH
IOUT ≤ 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
VIN= VIL or VIH
IOUT ≤ 6.0 mA
IOUT ≤7.8 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
Symbol
Parameter
VIH
Minimum High-Level
Input Voltage
VIL
VOH
VOL
378
Guaranteed Limit
Maximum Low-Level
Output Voltage
Test Conditions
V
IIN
Maximum Input
Leakage Current
VIN=VCC or GND
6.0
±0.1
±1.0
±1.0
µA
IOZ
Maximum Three
State Leakage
Current
Output in High-Impedance
State
VIN =VIH or VIL
VOUT= VCC or GND
6.0
±0.5
±5.0
±10
µA
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN=VCC or GND
IOUT=0µA
6.0
4.0
40
160
µA
IN74HC374A
AC ELECTRICAL CHARACTERISTICS(CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
VCC
V
25 °C
to
-55°C
≤85°C
≤125°C
Unit
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
2.0
4.5
6.0
6.0
30
35
5.0
24
28
4.0
20
24
MHz
tPLH, tPHL
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
tPLZ, tPHZ
Maximum Propagation Delay, Output Enable to Q
(Figures 2 and 5)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
tPZH, tPZL
Maximum Propagation Delay, Output Enable to Q
(Figures 2 and 5)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
tTLH, tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
Maximum Input Capacitance
-
10
10
10
pF
Maximum Three-State Output Capacitance
(Output in High-Impedance State)
-
15
15
15
pF
Symbol
fmax
CIN
COUT
CPD
Parameter
Power Dissipation Capacitance (Per Enabled
Output)
Typical @25°C,VCC=5.0 V
Used to determine the no-load dynamic power
consumption: PD=CPDVCC2f+ICCVCC
34
pF
TIMING REQUIREMENTS (CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
VCC
Symbol
Parameter
V
25 °C to
-55°C
≤85°C
≤125°C
Unit
tSU
Minimum Setup Time, Data to
Clock (Figure 3)
2.0
4.5
6.0
50
10
9
65
13
11
75
15
13
ns
th
Minimum Hold Time, Clock
to Data (Figure 3)
2.0
4.5
6.0
5
5
5
5
5
5
5
5
5
ns
tw
Minimum Pulse Width, Clock
(Figure 1)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
tr, tf
Maximum Input Rise and Fall
Times (Figure 1)
2.0
4.5
6.0
1000
500
400
1000
500
400
1000
500
400
ns
379
IN74HC374A
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
Figure 3. Switching Waveforms
Figure 4. Test Circuit
Figure 5. Test Circuit
EXPANDED LOGIC DIAGRAM
380
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