ADVANCED
LINEAR
DEVICES, INC.
ALD1115
COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
GENERAL DESCRIPTION
APPLICATIONS
The ALD1115 is a monolithic complementary N-channel and P-channel
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of
a N-channel MOSFET and a P-channel MOSFET in one package. The
ALD1115 is a dual version of the quad complementary ALD1105.
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The ALD1115 offers high input impedance and negative current
temperature coefficient. The transistor pair is designed for precision
signal switching and amplifying applications in +1V to +12V systems
where low input bias current, low input capacitance and fast switching
speed are desired. Since these are MOSFET devices, they feature very
large (almost infinite) current gain in a low frequency, or near DC,
operating environment. When connected in parallel with sources, drains
and gates connected together, a CMOS analog switch can be constructed.
In addition, the ALD1115 is intended as a building block for CMOS
inverters, differential amplifier input stages, transmission gates, and
multiplexer applications.
The ALD1115 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the field effect
transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which
is specified at 30pA at room temperature. V+ is connected to the
substrate, which is the most positive voltage potential of the ALD1115,
usually SP(5). Similarly, V- is connected to the most negative voltage
potential of the ALD1115, usually SN (1).
Precision current mirrors
Complementary push-pull linear drives
Discrete analog switches
Analog signal choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog current inverter
Precision matched current sources
CMOS inverter stage
Diode clamps
Source followers
PIN CONFIGURATION
SN
1
8
V+
GN
2
7
DP
DN
3
6
GP
V-
4
5
SP
DA, MA, PA, SA PACKAGE
FEATURES
• Thermal tracking between N-channel and P-channel
• Low threshold voltage of 0.7V for both N-channel
and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 1013Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Single N-channel MOSFET and single P-channel
MOSFET in one package
BLOCK DIAGRAM
N GATE 1 (2)
N SOURCE 1 (1)
N DRAIN 1 (3)
V- (4)
ORDERING INFORMATION ("L"suffix for lead free version)
-55°C to +125°C
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
0°C to +70°C
8-Pin
CERDIP
Package
8-Pin
MSOP
Package
8-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
ALD1115 MAL
ALD1115 PA
ALD1115PAL
ALD1115 SA
ALD1115 SAL
ALD1115 DA
P GATE 1 (6)
P DRAIN 1 (7)
P SOURCE 1 (5)
V+ (8)
* Contact factory for industrial temperature range.
© 2006 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range
13.2V
13.2V
500 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
PA, SA package
DA package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
N - Channel
Symbol Min
Typ Max
Gate Threshold VT
Voltage
0.4
Gate Threshold
Temperature
TCVT
Drift
0.7
1.0
-1.2
On Drain
Current
IDS (ON)
3
4.8
Trans-.
conductance
Gfs
1
1.8
Output
Conductance
GOS
200
Drain Source
RDS(ON)
ON Resistance
350
Unit
V
Test
Conditions
IDS = 1µA VGS = VDS
Unit
-0.4
V
mV/°C
mA
500
VGS = VDS = 5V
-1.3
-2
-1.0
mmho
VDS = 5V IDS= 10mA
0.25
µmho
Test
Conditions
IDS = -1µA VGS = VDS
mV/°C
mA
VGS = VDS = -5V
0.67
mmho
VDS = -5V IDS= -10mA
VDS = 5V IDS = 10mA
40
µmho
VDS = -5V IDS = -10mA
Ω
VDS = 0.1V VGS = 5V
1200
Ω
VDS = -0.1V VGS = -5V
V
IDS = 1µA VGS =0V
V
IDS = -1µA VGS =0V
BVDSS
Off Drain
Current
IDS(OFF)
10
400
4
pA
nA
VDS =12V IGS = 0V
TA = 125°C
Gate Leakage
Current
IGSS
0.1
30
1
pA
nA
VDS = 0V VGS =12V
TA = 125°C
Input
Capacitance
CISS
1
3
pF
12
-0.7
-1.3
Drain Source
Breakdown
Voltage
ALD1115
P - Channel
Min
Typ Max
Advanced Linear Devices
1800
-12
10
400
4
pA
nA
VDS = -12V VGS = 0V
TA = 125°C
1
30
1
pA
nA
VDS = 0V VGS =-12V
TA = 125°C
1
3
pF
2
P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
-10
VGS = -12V
VBS = 0V
TA = 25°C
-7.5
DRAIN SOURCE CURRENT
(µA)
DRAIN SOURCE CURRENT
(mA)
500
-10V
-8V
-5.0
-6V
-2.5
-4V
VGS = -12V
VBS = 0V
TA = 25°C
250
-6V
-4V
-2V
0
-250
-2V
-500
0
0
-2
-4
-6
-8
-10
-320
-12
-160
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE VOLTAGE (V)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
-20
1.0
IDS = -5mA
VBS = 0V
f = 1KHz
0.5
DRAIN SOURCE CURRENT
(µA)
FORWARD TRANSCONDUCTANCE
(mmho)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
0.2
0.1
TA = +125°C
TA = +25°C
0.05
IDS = -1mA
0.02
VBS = 0V
-10
-5
VGS = VDS
TA = 25°C
-2
-4
-6
-8
-10
0
-12
-0.8
DRAIN SOURCE ON RESISTANCE
RDS (ON) vs. GATE SOURCE VOLTAGE
-2.4
-3.2
-4.0
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
OFF DRAIN SOURCE CURRENT
(pA)
100
VDS = 0.4V
VBS = 0V
10
-1.6
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
(KΩ)
4V
6V
8V
10V
12V
2V
-15
0
0.01
0
TA = +125°C
1
TA = +25°C
1000
VDS = -12V
VGS = VBS = 0V
100
10
1
0.1
0
-2
-4
-6
-8
-10
-12
-50
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ALD1115
320
160
0
Advanced Linear Devices
3
N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
VGS = 12V
VBS = 0V
TA = 25°C
DRAIN SOURCE CURRENT
(µA)
DRAIN SOURCE CURRENT
(mA)
1000
20
10V
15
8V
10
6V
5
4V
2V
0
0
2
4
6
8
10
0
4V
2V
-500
-80
0
80
160
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT
(µA)
VBS = 0V
f = 1KHz
10
IDS = 10mA
5
TA = +25°C
TA = +125°C
2
1
0.5
IDS = 1mA
0.2
2
4
6
10
VBS = 0V
-4V
-2V
-6V
10
-8V
-10V
5
-12V
0
0.8
1.6
2.4
3.2
DRAIN SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
RDS (ON) vs. GATE SOURCE VOLTAGE
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
VDS = 0.2V
VBS = 0V
10
TA = +125°C
1
TA = +25°C
0
15
12
100
0.1
VGS = VDS
TA = 25°C
0
8
OFF DRAIN SOURCE CURRENT
(pA)
FORWARD TRANSCONDUCTANCE
(mmho)
6V
20
0
DRAIN SOURCE ON RESISTANCE
(KΩ)
VGS = 12V
500
-1000
-160
12
20
2
4.0
1000
VDS = +12V
VGS = VBS = 0V
100
10
1
4
6
8
10
12
-50
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ALD1115
VBS = 0V
TA = 25°C
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4
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
V+ = +5V
V+ = +5V
Q3
ISET
Q4
Q3
Q4
RSET
ISET
I SOURCE
RSET
ISOURCE
Digital Logic Control
of Current Source
Q1
Q2
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
I SOURCE = ISET
= V+ -Vt
RSET
~
=
4
RSET
Q1
ON
OFF
: N - Channel MOSFET
Q1
Q3,Q4 : P - Channel MOSFET
CMOS ANALOG SWITCH
CMOS INVERTER
CONTROL
V+
OUT
IN
IN
V+
OUT
CONTROL
ALD1115
Advanced Linear Devices
5
TYPICAL APPLICATIONS
DIODE-CONNECTED CONFIGURATION
V+
SOURCE FOLLOWER
V+
V+
R
VOUT = V+ - V DS
IN
OUT
VOUT = V DS
RA
RB
R
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
ISET
RSET
ISOURCE
Q4
Q2
Q1
Q2
Q3
Q4
Q3
Q1
ISET
ISOURCE = ISET =
Q1, Q2, Q3, Q4: N - Channel MOSFET
(1/2 ALD1105 ALD1116)
ALD1115
ISOURCE
RSET
V+ - 2Vt
RSET
~
=
3
RSET
Q1, Q2, Q3, Q4: P - Channel MOSFET
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6