SemiHow HFB1N60F Superior avalanche rugged technology Datasheet

BVDSS = 600 V
RDS(on) typ ȍ
HFB1N60F
ID = 1 A
600V N-Channel MOSFET
TO-92
FEATURES
1
‰ Originative New Design
2
3
1.Gate 2. Drain 3. Source
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 3.7 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
600
V
Drain Current
– Continuous (TC = 25୅)
1*
A
Drain Current
– Continuous (TC = 100୅)
0.6 *
A
IDM
Drain Current
– Pulsed
4*
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
33
mJ
IAR
Avalanche Current
(Note 1)
1
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.3
mJ
Power Dissipation (TA = 25୅)
0.9
W
Power Dissipation (TC = 25୅)
- Derate above 25୅
2.5
W
0.02
W/୅
-55 to +150
୅
300
୅
ID
PD
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJL
Junction-to-Lead
--
50
RșJA
Junction-to-Ambient
--
140
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡
HFB1N60F
April 2015
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.5 A
--
6.5
8
Ÿ
VGS = 0 V, ID = 250 Ꮃ
600
--
--
V
VDS = 600 V, VGS = 0 V
--
--
10
Ꮃ
VDS = 480 V, TC = 125୅
--
--
100
Ꮃ
VGS = ρ30 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
160
--
Ꮔ
--
26
--
Ꮔ
--
6.5
--
Ꮔ
--
13
--
Ꭸ
--
17
--
Ꭸ
--
19
--
Ꭸ
--
22
--
Ꭸ
--
3.7
--
nC
--
0.9
--
nC
--
1.3
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 1.0 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480 V, ID = 1.0 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
1.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
4.0
VSD
Source-Drain Diode Forward Voltage
IS = 1.0 A, VGS = 0 V
--
--
1.3
V
trr
Reverse Recovery Time
--
181
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 1.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
0.5
--
nC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=59mH, IAS=1.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡
HFB1N60F
Electrical Characteristics TJ=25 qC
HFB1N60F
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON)[:],
Drain-Source On-Resistance
20
15
VGS = 10V
10
VGS = 20V
5
* Note : TJ = 25oC
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
250
Ciss
200
Coss
150
100
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
50
12
VGS, Gate-Source Voltage [V]
300
10
VDS = 120V
8
VDS = 480V
VDS = 300V
6
4
2
* Note : ID = 1.0A
0
10-1
100
101
0
0
1
2
3
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡
(continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFB1N60F
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 0.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
1.0
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
0.8
100 Ps
1 ms
0
10
10 ms
100 ms
DC
* Notes :
1. TC = 25 oC
0.6
0.4
0.2
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
102
0.0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
102
ZTJL(t), Thermal Response
ID, Drain Current [A]
10 Ps
D=0.5
1
0.2
10
* Notes :
1. ZTJL(t) = 50 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TL = PDM * ZTJL(t)
0.1
0.05
0
10
0.02
PDM
0.01
t1
single pulse
-1
10
10-5
10-4
10-3
10-2
10-1
100
101
t2
102
103
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡
HFB1N60F
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡
HFB1N60F
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡
HFB1N60F
Package Dimension
{vT`YG
3.71±0.2
4.58±0.25
3°
4.58±0.25
4°
14.47±0.5
0.46±0.1
1.27typ
3.6±0.25
1.02±0.1
3.71±0.25
1.27typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡
HFB1N60F
W0
W
W1
H0
H
W2
H1
{vT`YG{hwpunG
D
0
F1
F2
P1
Item
P2
P
Symbol
͵ΚΞΖΟΤΚΠΟ͑ΌΞΞΎ
΃ΖΗΖΣΖΟΔΖ
΅ΠΝΖΣΒΟΔΖ
Component pitch
P
ͣͨ͢͟
ρͦ͟͡
Side lead to center of feed hole
P1
ͤͩͦ͟
ρͦ͟͡
Center lead to center of feed hole
P2
ͧͤͦ͟
ρͦ͟͡
FI,F2
ͣͦ͟
ͣ͜͟͟͢͡͠͞͡
Carrier Tape width
W
ͩ͢͟͡
ͦ͜͢͟͟͡͠͞͡
Adhesive tape width
W0
ͧ͟͡
ρͦ͟͡
Tape feed hole location
W1
ͪ͟͡
ρͦ͟͡
Adhesive tape position
W2
Lead pitch
͑͑͢͟͡;ͲΉ
ʹΖΟΥΖΣ͑ΠΗ͑ΗΖΖΕ͑ΙΠΝΖ͑ΥΠ͑ΓΠΥΥΠΞ͑ΠΗ͑ΔΠΞΡΠΟΖΟΥ͑
H
ͪͦ͢͟
ρ͢
ʹΖΟΥΖΣ͑ΠΗ͑ΗΖΖΕ͑ΙΠΝΖ͑ΥΠ͑ΝΖΒΕ͑ΗΠΣΞ
H0
ͧ͢͟͡
ρͦ͟͡
Component height
H1
Tape feed hole diameter
D0
ͣͨ͑͟͡ΞΒΩ
ͥ͟͡
ρͣ͟͡
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͦ͑͢͡