DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW PIN DESCRIPTION • Three tolerance series: ±1%, ±2% and approx. ±5% 1 anode • Working voltage range: nom. 2.4 to 75 V (E24 range) 2 not connected • Non-repetitive peak reverse power dissipation: max. 40 W. 3 cathode APPLICATIONS • General regulation functions. handbook, halfpage 2 1 DESCRIPTION 2 n.c. Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The diodes are available in the normalized E24 ±1% (BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. 1 3 3 Top view MAM243 Fig.1 Simplified outline (SOT23) and symbol. 2003 Apr 10 2 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series MARKING TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) Y70 BZX84-A43 Y80 or ∗C5 Y71 BZX84-A47 Marking codes for BZX84-A2V4 to BZX84-A75 BZX84-A2V4 Y50 or ∗50 BZX84-A6V2 Y60 or ∗60 BZX84-A16 BZX84-A2V7 Y51 or ∗51 BZX84-A6V8 Y61 or ∗61 BZX84-A18 BZX84-A3V0 Y52 or ∗52 BZX84-A7V5 Y62 or ∗62 BZX84-A20 BZX84-A3V3 Y53 BZX84-A8V2 Y63 or ∗63 BZX84-A22 BZX84-A3V6 Y54 or ∗C1 BZX84-A9V1 Y64 or ∗64 BZX84-A3V9 Y55 or ∗55 BZX84-A10 Y65 or ∗65 BZX84-A4V3 Y56 or ∗56 BZX84-A11 BZX84-A4V7 Y57 or ∗57 BZX84-A5V1 BZX84-A5V6 Y72 or ∗C2 BZX84-A51 Y81 Y82 or ∗C6 Y73 BZX84-A56 Y83 BZX84-A24 Y74 BZX84-A62 Y84 BZX84-A27 Y75 or ∗75 BZX84-A68 Y85 Y66 or ∗04 BZX84-A30 Y76 BZX84-A75 Y86 or ∗86 BZX84-A12 Y67 or ∗67 BZX84-A33 Y77 − − Y58 or ∗58 BZX84-A13 Y68 or ∗C0 BZX84-A36 Y78 or ∗C3 − − Y59 or ∗59 BZX84-A15 Y69 or ∗69 BZX84-A39 Y79 or ∗C4 − − Marking codes for BZX84-B2V4 to BZX84-B75 BZX84-B2V4 Z50 or ∗Z0 BZX84-B6V2 Z60 or ∗R5 BZX84-B16 Z70 or ∗70 BZX84-B43 Z80 or ∗S5 BZX84-B2V7 Z51 or ∗Z1 BZX84-B6V8 Z61 or ∗R6 BZX84-B18 Z71 or ∗71 BZX84-B47 Z81 or ∗S6 BZX84-B3V0 Z52 or ∗S1 BZX84-B7V5 Z62 or ∗R8 BZX84-B20 Z72 or ∗72 BZX84-B51 Z82 or ∗S9 BZX84-B3V3 Z53 or ∗S2 BZX84-B8V2 Z63 or ∗R9 BZX84-B22 Z73 or ∗73 BZX84-B56 Z83 or ∗R0 BZX84-B3V6 Z54 or ∗S3 BZX84-B9V1 Z64 or ∗T1 BZX84-B24 Z74 or ∗74 BZX84-B62 Z84 or ∗R3 BZX84-B3V9 Z55 or ∗S4 BZX84-B10 Z65 or ∗66 BZX84-B27 Z75 or ∗Z5 BZX84-B68 Z85 or ∗R4 BZX84-B4V3 Z56 or ∗S7 BZX84-B11 Z66 or ∗Z6 BZX84-B30 Z76 or ∗Z4 BZX84-B75 Z86 or ∗R7 BZX84-B4V7 Z57 or ∗S8 BZX84-B12 Z67 or ∗Z7 BZX84-B33 Z77 or ∗Y1 − − BZX84-B5V1 Z58 or ∗R1 BZX84-B13 Z68 or ∗Z8 BZX84-B36 Z78 or ∗Y2 − − BZX84-B5V6 Z59 or ∗R2 BZX84-B15 Z69 or ∗Z9 BZX84-B39 Z79 or ∗S0 − − Marking codes for BZX84-C2V4 to BZX84-C75 BZX84-C2V4 Z11 or ∗T3 BZX84-C6V2 Z4∗ BZX84-C16 Y5∗ BZX84-C43 Y15 or ∗B4 BZX84-C2V7 Z12 or ∗T4 BZX84-C6V8 Z5∗ BZX84-C18 Y6∗ BZX84-C47 Y16 or ∗B5 BZX84-C3V0 Z13 or ∗T9 BZX84-C7V5 Z6∗ BZX84-C20 Y7∗ BZX84-C51 Y17 or ∗B7 BZX84-C3V3 Z14 or ∗B1 BZX84-C8V2 Z7∗ BZX84-C22 Y8∗ BZX84-C56 Y18 or ∗B8 BZX84-C3V6 Z15 or ∗B2 BZX84-C9V1 Z8∗ BZX84-C24 Y9∗ BZX84-C62 Y19 or ∗B9 BZX84-C3V9 Z16 or ∗B3 BZX84-C10 Z9∗ BZX84-C27 Y10 or ∗T2 BZX84-C68 Y20 or ∗B0 BZX84-C4V3 Z17 or ∗B6 BZX84-C11 Y1∗ BZX84-C30 Y11 or ∗T5 BZX84-C75 Y21 or ∗A1 BZX84-C4V7 Z1∗ BZX84-C12 Y2∗ BZX84-C33 Y12 or ∗T6 − − BZX84-C5V1 Z2∗ BZX84-C13 Y3∗ BZX84-C36 Y13 or ∗T7 − − BZX84-C5V6 Z3∗ BZX84-C15 Y4∗ BZX84-C39 Y14 or ∗T8 − − Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. 2003 Apr 10 3 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. 200 UNIT IF continuous forward current mA IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tj = 25 °C prior to surge see Tables 1 and 2 Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW PZSM non-repetitive peak reverse power dissipation tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.2 − 40 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Note 1. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total BZX84-A and B and C series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current 2003 Apr 10 CONDITIONS MAX. UNIT IF = 10 mA; see Fig.3 0.9 V BZX84-A/B/C2V4 VR = 1 V 50 μA BZX84-A/B/C2V7 VR = 1 V 20 μA BZX84-A/B/C3V0 VR = 1 V 10 μA BZX84-A/B/C3V3 VR = 1 V 5 μA BZX84-A/B/C3V6 VR = 1 V 5 μA BZX84-A/B/C3V9 VR = 1 V 3 μA BZX84-A/B/C4V3 VR = 1 V 3 μA BZX84-A/B/C4V7 VR = 2 V 3 μA BZX84-A/B/C5V1 VR = 2 V 2 μA BZX84-A/B/C5V6 VR = 2 V 1 μA BZX84-A/B/C6V2 VR = 4 V 3 μA BZX84-A/B/C6V8 VR = 4 V 2 μA BZX84-A/B/C7V5 VR = 5 V 1 μA BZX84-A/B/C8V2 VR = 5 V 700 nA BZX84-A/B/C9V1 VR = 6 V 500 nA BZX84-A/B/C10 VR = 7 V 200 nA BZX84-A/B/C11 VR = 8 V 100 nA BZX84-A/B/C12 VR = 8 V 100 nA BZX84-A/B/C13 VR = 8 V 100 nA BZX84-A/B/C15 to 75 VR = 0.7VZnom 50 nA 4 DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 4 and 5) Tol. ±1% (A) Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 1 mA at IZtest = 5 mA MIN. MIN. MIN. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX. DIODE CAP. NON-REPETITIVE Cd (pF) PEAK REVERSE CURRENT at f = 1 MHz; VR = 0 V IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. MAX. 5 2.43 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.67 2.73 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 3V0 2.97 3.03 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0 3V3 3.26 3.34 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.56 3.64 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.86 3.94 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.25 4.35 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.65 4.75 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 5.04 5.16 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0 5V6 5.54 5.66 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.13 6.27 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.73 6.87 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.42 7.58 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 8.11 8.29 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 9.00 9.20 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.90 10.10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.80 11.11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.88 12.12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.87 13.13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.85 15.15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.84 16.16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.82 18.18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.80 20.20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5 22 21.78 22.22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25 24 23.76 24.24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25 Product data sheet 2.37 BZX84 series 2V4 NXP Semiconductors BZX84Axxx Bxxx Cxxx WORKING VOLTAGE VZ (V) at IZtest = 5 mA Voltage regulator diodes 2003 Apr 10 Table 1 Per type BZX84-A/B/C2V4 to A/B/C24 Tj = 25 °C unless otherwise specified. DIFFERENTIAL RESISTANCE rdif (Ω) 6 Tol. ±1% (A) Tol. ±2% (B) Tol. approx. ±5% (C) MIN. MAX. MIN. MAX. MIN. 27 26.73 27.27 26.50 27.50 25.1 28.9 30 29.70 30.30 29.40 30.60 28.0 33 32.67 33.33 32.30 33.70 31.0 36 35.64 36.36 35.30 36.70 39 38.61 39.39 38.20 43 42.57 43.43 42.10 47 46.53 47.47 51 50.49 56 55.44 62 MAX. TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 4 and 5) at at IZtest = 0.5 mA IZtest = 2 mA TYP. DIODE CAP. NON-REPETITIVE Cd (pF) PEAK REVERSE CURRENT at f = 1 MHz; VR = 0 V IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 65 300 25 80 21.4 23.4 25.3 50 1.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5 51.51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4 56.56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3 61.38 62.62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 67.32 68.68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 74.25 75.75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 NXP Semiconductors BZX84Axxx Bxxx Cxxx WORKING VOLTAGE VZ (V) at IZtest = 2 mA Voltage regulator diodes 2003 Apr 10 Table 2 Per type BZX84-A/B/C27 to A/B/C75 Tj = 25 °C unless otherwise specified. Product data sheet BZX84 series NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed circuit-board. 2003 Apr 10 7 VALUE UNIT 330 K/W 500 K/W NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series GRAPHICAL DATA MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 0.8 1 VF (V) Forward current as a function of forward voltage; typical values. MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 0 20 40 IZ (mA) −5 60 0 4 8 BZX84-A/B/C2V4 to A/B/C4V3. Tj = 25 to 150 °C. BZX84-A/B/C4V7 to A/B/C12. Tj = 25 to 150 °C. Fig.4 Fig.5 Temperature coefficient as a function of working current; typical values. 2003 Apr 10 8 12 16 IZ (mA) 20 Temperature coefficient as a function of working current; typical values. NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Apr 10 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 9 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings 2003 Apr 10 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp11 Date of release: 2003 Apr 10 Document order number: 9397 750 10959