SeCoS DTC143TSA Npn digital transistors (built-in resistors) Datasheet

DTC143TE / DTC143TUA
DTC143TCA / DTC143TSA / DTC143TM
NPN Digital Transistors (Built-in Resistors)
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTC143TE (SOT-523)
DTC143TUA (SOT-323)
Addreviated symbol:03
Addreviated symbol:03
DTC143TM (SOT-723)
DTC143TCA (SOT-23)
Addreviated symbol:03
Addreviated symbol:03
EQUIVALENT CIRCUIT
DTA143TSA (TO-92S)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Limits (DTC143T□)
Parameter
Symbol
Collector-Base Voltage
V(BR)CBO
50
V
Collector-Emitter Voltage
V(BR)CEO
50
V
Emitter-Base Voltage
V(BR)EBO
5
Collector Current
IC
100
Collector Dissipation
PC
Junction & Storage temperature
http://www.SeCoSGmbH.com/
25-Oct-2011 Rev. B
TJ, TSTG
M
100
E
150
UA
CA
SA
Unit
mA
200
150, -55~150
300
mW
°C
Any changes of specification will not be informed individually.
Page 1 of 2
DTC143TE / DTC143TUA
DTC143TCA / DTC143TSA / DTC143TM
NPN Digital Transistors (Built-in Resistors)
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
V(BR)CBO
50
-
-
V
IC=50µA
Collector-emitter breakdown
voltage
V(BR)CEO
50
-
-
V
IC=1mA
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
V
IE=50µA
Collector cut-off current
ICBO
-
-
0.5
µA
VCB=50V
Emitter cut-off current
IEBO
-
-
0.5
µA
VEB=4V
VCE(sat)
-
-
0.3
V
IC=5mA, IB=0.25mA
DC current transfer ratio
hFE
100
-
600
Input resistance
R1
3.29
4.7
6.11
KΩ
Transition frequency
fT
-
250
-
MHz
Collector-emitter saturation voltage
Test Conditions
VCE=5V, IC=1mA
VO=10V, IO=5mA,
f=100MHz
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
25-Oct-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2
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