Low VCE (sat) Digital transistors (with built-in resistors) DTD543EE / DTD543EM zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTD543EE 0.7 1.6 0.55 0.3 zStructure NPN digital transistor (Built-in resistor type) (2) 1.6 0.8 (3) 0.2 0.15 0.5 0.5 1.0 EMT3 JEITA No. (SC-75A) JEDEC No. <SOT-416> zFeature 1. VCE (sat) is lower than conventional products. 2. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4. Only the on / off conditions need to be set for operation, making device design easy. 0.1Min. (1) 0.2 (1) GND (2) IN (3) OUT Each lead has same dimensions Addreviated symbol : X23 1.2 0.32 0.2 DTD543EM 0.8 1.2 (3) (1)(2) 0.4 0.4 0.2 0.22 0.13 0.5 0.8 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Addreviated symbol : X23 zPackaging specifications Package EMT3 VMT3 Packaging type Taping Taping TL T2L 3000 8000 Code Part No. Basic ordering unit (pieces) − DTD543EE − DTD543EM zAbsolute maximum ratings (Ta=25°C) Symbol Parameter zInner circuit Limits DTD543EE DTD543EM Unit OUT R1 Supply voltage VCC 12 V Input voltage VIN −10 to +12 V 500 mA Collector current ∗1 IC (max) Power dissipation ∗2 PD 150 mW Tj 150 C IN R2 GND OUT IN Junction temperature Storage temperature Tstg −55 to +150 C ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ GND R1=4.7kΩ / R2=4.7kΩ 1/2 2009.05 - Rev.B DTD543EE / DTD543EM Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 2.5 − − VO(on) − 60 300 mV IO/II= 100mA / 5mA II − − 1.4 mA VI= 5V IO(off) − − 0.5 µA VCC= 12V, VI=0V DC current gain GI 115 − − − Transition frequency ∗ fT − 260 − MHz Input resistance R1 3.29 4.7 6.11 kΩ − Resistance ratio R2/R1 0.8 1.0 1.2 − − Input voltage Output voltage Input current Output current Unit V Conditions VCC= 5V, IO= 100µA VO= 0.3V, IO= 20mA VO= 2V, IO= 100mA VCE= 10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor. zElectrical characteristics curves -10m -5m VO= 0.3V -20 (on) INPUT VOLTAGE : VI OUTPUT CURRENT : Io (A) (V) -50 -10 -5 Ta= 40 C 25 C 100 C -2 -1 -500m -1m -500∝ -100∝ -50∝ -20∝ -10∝ -5∝ -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) -1 Ta=100 C 25 C 40 C -200∝ -2∝ -1∝ 0 200 100 Ta=100 C 25 C 40 C 50 20 10 5 2 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 VO= 5V 500 -2m -200m -100m -500∝ -1m -2m 1k VCC= 5V DC CURRENT GAIN : GI -100 Output current vs. input voltage (OFF characteristics) 1 -500∝ -1m -2m -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) -500m -200m -100m Ta=100 C 25 C 40 C -50m -20m -10m -5m -2m -1m -500∝ -1m -2m -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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